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SPB73N03S2L-08-VB Product details
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SPB73N03S2L-08-VB MOSFET Product Introduction
SPB73N03S2L-08-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is 30V, suitable for low voltage drive systems, while its maximum drain current (ID) reaches 98A, which is very suitable for high-efficiency switching control in high-power and low-voltage applications. This MOSFET uses advanced Trench technology to provide very low on-resistance (RDS(ON) = 2.7mΩ @ VGS = 4.5V), giving it extremely high switching efficiency and low power consumption.
The high current handling capability and low on-resistance of SPB73N03S2L-08-VB make it very suitable for systems requiring high efficiency and high power, such as power tools, power management systems, power conversion modules, and battery management systems.
SPB73N03S2L-08-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is 30V, suitable for low voltage drive systems, while its maximum drain current (ID) reaches 98A, which is very suitable for high-efficiency switching control in high-power and low-voltage applications. This MOSFET uses advanced Trench technology to provide very low on-resistance (RDS(ON) = 2.7mΩ @ VGS = 4.5V), giving it extremely high switching efficiency and low power consumption.
The high current handling capability and low on-resistance of SPB73N03S2L-08-VB make it very suitable for systems requiring high efficiency and high power, such as power tools, power management systems, power conversion modules, and battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SPB73N03S2L-08-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench
Domain and module applications：
Applications and Modules
SPB73N03S2L-08-VB MOSFET is suitable for a variety of applications that require high current, high power and low conduction loss. Here are some typical application cases:
1. **Power Management Systems**:
Due to its extremely low on-resistance (only 2.7mΩ @ VGS = 4.5V), SPB73N03S2L-08-VB is very suitable for power converters, DC-DC converters, AC-DC power supplies and high-efficiency power management systems. In these systems, the low conduction loss and high current handling capability of MOSFET can significantly improve conversion efficiency and reduce heat generation, improving the performance of the entire power system.
2. **Power Tools**:
The high current carrying capability of SPB73N03S2L-08-VB makes it an ideal choice for power tools. For example, in battery management systems and electric motor drives for power tools, this MOSFET can help optimize energy efficiency and provide a more stable current supply.
3. **Battery Management Systems**:
In battery management systems, the low on-resistance and high current capability of the SPB73N03S2L-08-VB make it an ideal choice for efficient battery charge and discharge control. It can effectively control the battery charging and discharging process, optimize the battery life, and improve the overall efficiency of the system, especially for high-power battery systems.
4. **High-efficiency Motor Drives**:
In motor drive applications, the SPB73N03S2L-08-VB provides low-loss, high-efficiency switching performance. The high current capability of this MOSFET makes it very suitable for motor drive systems in the fields of industrial automation, robot control, power tools, etc., which can ensure the stability and efficiency of the motor at high speeds.
5. **Automotive Electronics**:
Due to its high current capability and high voltage resistance, SPB73N03S2L-08-VB is also widely used in automotive electronic systems. For example, it can be used in power management modules, drive motor control systems, and battery charging systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs) to provide efficient and stable power control.
6. **LED Driver Systems**:
In LED driver systems, SPB73N03S2L-08-VB MOSFET also plays an important role. Its low on-resistance characteristics make this MOSFET highly efficient in driving high-power LED lighting applications, which can reduce energy consumption and improve the long-term reliability of the system.
7. **Telecommunication Power Supplies**:
In the power supply system of the communication base station, SPB73N03S2L-08-VB provides high-efficiency power management to help convert and stabilize the power required by the base station, especially under high load and continuous working conditions, it can provide stable and low-loss current support.
SPB73N03S2L-08-VB MOSFET is suitable for a variety of applications that require high current, high power and low conduction loss. Here are some typical application cases:
1. **Power Management Systems**:
Due to its extremely low on-resistance (only 2.7mΩ @ VGS = 4.5V), SPB73N03S2L-08-VB is very suitable for power converters, DC-DC converters, AC-DC power supplies and high-efficiency power management systems. In these systems, the low conduction loss and high current handling capability of MOSFET can significantly improve conversion efficiency and reduce heat generation, improving the performance of the entire power system.
2. **Power Tools**:
The high current carrying capability of SPB73N03S2L-08-VB makes it an ideal choice for power tools. For example, in battery management systems and electric motor drives for power tools, this MOSFET can help optimize energy efficiency and provide a more stable current supply.
3. **Battery Management Systems**:
In battery management systems, the low on-resistance and high current capability of the SPB73N03S2L-08-VB make it an ideal choice for efficient battery charge and discharge control. It can effectively control the battery charging and discharging process, optimize the battery life, and improve the overall efficiency of the system, especially for high-power battery systems.
4. **High-efficiency Motor Drives**:
In motor drive applications, the SPB73N03S2L-08-VB provides low-loss, high-efficiency switching performance. The high current capability of this MOSFET makes it very suitable for motor drive systems in the fields of industrial automation, robot control, power tools, etc., which can ensure the stability and efficiency of the motor at high speeds.
5. **Automotive Electronics**:
Due to its high current capability and high voltage resistance, SPB73N03S2L-08-VB is also widely used in automotive electronic systems. For example, it can be used in power management modules, drive motor control systems, and battery charging systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs) to provide efficient and stable power control.
6. **LED Driver Systems**:
In LED driver systems, SPB73N03S2L-08-VB MOSFET also plays an important role. Its low on-resistance characteristics make this MOSFET highly efficient in driving high-power LED lighting applications, which can reduce energy consumption and improve the long-term reliability of the system.
7. **Telecommunication Power Supplies**:
In the power supply system of the communication base station, SPB73N03S2L-08-VB provides high-efficiency power management to help convert and stabilize the power required by the base station, especially under high load and continuous working conditions, it can provide stable and low-loss current support.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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