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SPB73N03S2L08T-VB Product details
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Product Introduction
SPB73N03S2L08T-VB is a high-performance N-channel MOSFET in TO263 package, designed for high efficiency and high current applications. Its maximum drain-source voltage (V_DS) is 30V, and the maximum drain current (I_D) can reach 98A. It has an extremely low on-resistance (R_DS(ON)), which is only 2.4mΩ at V_GS = 10V, making it suitable for high-power, high-frequency switching power supplies, DC-DC converters, and battery management systems. This MOSFET uses Trench technology to provide excellent switching performance and thermal stability, greatly improving the system's operating efficiency and reducing energy loss and heat generation. Due to its ultra-low on-resistance, the SPB73N03S2L08T-VB is particularly suitable for applications that require high current carrying and high efficiency.
SPB73N03S2L08T-VB is a high-performance N-channel MOSFET in TO263 package, designed for high efficiency and high current applications. Its maximum drain-source voltage (V_DS) is 30V, and the maximum drain current (I_D) can reach 98A. It has an extremely low on-resistance (R_DS(ON)), which is only 2.4mΩ at V_GS = 10V, making it suitable for high-power, high-frequency switching power supplies, DC-DC converters, and battery management systems. This MOSFET uses Trench technology to provide excellent switching performance and thermal stability, greatly improving the system's operating efficiency and reducing energy loss and heat generation. Due to its ultra-low on-resistance, the SPB73N03S2L08T-VB is particularly suitable for applications that require high current carrying and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: SPB73N03S2L08T-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 2.7mΩ @ V_GS = 4.5V
- 2.4mΩ @ V_GS = 10V
- **Drain current (I_D)**: 98A
- **Technology type**: Trench technology
- **Model**: SPB73N03S2L08T-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 2.7mΩ @ V_GS = 4.5V
- 2.4mΩ @ V_GS = 10V
- **Drain current (I_D)**: 98A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
1. **High-efficiency power conversion**
Due to its ultra-low on-resistance, the SPB73N03S2L08T-VB is very suitable for use in high-efficiency DC-DC converters, voltage regulator modules and high-frequency switching power supplies. Its low R_DS(ON) can effectively reduce energy loss, while providing stable current output and reducing heating problems. In situations where high current and high-efficiency conversion are required, such as high-efficiency power modules and communication base station power supplies, this MOSFET can greatly improve the overall efficiency of the system.
2. **Battery Management System (BMS)**
In the battery management system, the SPB73N03S2L08T-VB provides extremely low on-resistance and high current carrying capacity, making it an ideal choice for efficient battery charging and discharging control. Especially in applications such as electric vehicles (EVs) and energy storage systems (ESSs) that require high current and high-efficiency battery management, this MOSFET can ensure stable system operation and improve battery charging and discharging efficiency.
3. **Electric Vehicle Power Management**
The high current carrying capacity (up to 98A) of the SPB73N03S2L08T-VB makes it an ideal component for electric vehicle power management systems, especially in the drive circuit and charging system of electric vehicles. It can handle high current loads while maintaining low power loss and efficient power conversion, which is essential for extending battery life and improving energy efficiency.
4. **Power Amplifiers and Audio Equipment**
The high efficiency of the SPB73N03S2L08T-VB also makes it suitable for use in high-power amplifiers and audio amplifiers. The low on-resistance and high current carrying capacity of the MOSFET ensure stable operation during high-power amplification, and can effectively reduce the heat loss of the system and improve the overall performance of the audio system.
5. **Motor Drive and Industrial Applications**
In motor drive systems (such as stepper motors and brushless DC motor drives), the low on-resistance of the SPB73N03S2L08T-VB enables it to provide stable current output, reduce power loss, and thus improve motor drive efficiency. Its high current capability and low power consumption make it a core component in power tools, industrial machinery, and automation equipment.
6. **Automotive Battery Protection Circuits**
In automotive applications, especially in battery protection circuits for electric vehicles and hybrid electric vehicles (HEVs), the SPB73N03S2L08T-VB can be used to control the charging and discharging process of the battery. Its high withstand voltage (30V) and high current carrying capacity ensure stable operation at high power demands, protecting the battery from overload and overvoltage damage.
7. **Power Management and Load Switching**
This MOSFET can be used in a variety of power management and load switching applications, especially in power systems that require high current and low voltage. Its low on-resistance minimizes losses during load switching, thereby optimizing the energy efficiency of the entire system and is suitable for use in a variety of fields, including home appliances, communications equipment, and power tools.
1. **High-efficiency power conversion**
Due to its ultra-low on-resistance, the SPB73N03S2L08T-VB is very suitable for use in high-efficiency DC-DC converters, voltage regulator modules and high-frequency switching power supplies. Its low R_DS(ON) can effectively reduce energy loss, while providing stable current output and reducing heating problems. In situations where high current and high-efficiency conversion are required, such as high-efficiency power modules and communication base station power supplies, this MOSFET can greatly improve the overall efficiency of the system.
2. **Battery Management System (BMS)**
In the battery management system, the SPB73N03S2L08T-VB provides extremely low on-resistance and high current carrying capacity, making it an ideal choice for efficient battery charging and discharging control. Especially in applications such as electric vehicles (EVs) and energy storage systems (ESSs) that require high current and high-efficiency battery management, this MOSFET can ensure stable system operation and improve battery charging and discharging efficiency.
3. **Electric Vehicle Power Management**
The high current carrying capacity (up to 98A) of the SPB73N03S2L08T-VB makes it an ideal component for electric vehicle power management systems, especially in the drive circuit and charging system of electric vehicles. It can handle high current loads while maintaining low power loss and efficient power conversion, which is essential for extending battery life and improving energy efficiency.
4. **Power Amplifiers and Audio Equipment**
The high efficiency of the SPB73N03S2L08T-VB also makes it suitable for use in high-power amplifiers and audio amplifiers. The low on-resistance and high current carrying capacity of the MOSFET ensure stable operation during high-power amplification, and can effectively reduce the heat loss of the system and improve the overall performance of the audio system.
5. **Motor Drive and Industrial Applications**
In motor drive systems (such as stepper motors and brushless DC motor drives), the low on-resistance of the SPB73N03S2L08T-VB enables it to provide stable current output, reduce power loss, and thus improve motor drive efficiency. Its high current capability and low power consumption make it a core component in power tools, industrial machinery, and automation equipment.
6. **Automotive Battery Protection Circuits**
In automotive applications, especially in battery protection circuits for electric vehicles and hybrid electric vehicles (HEVs), the SPB73N03S2L08T-VB can be used to control the charging and discharging process of the battery. Its high withstand voltage (30V) and high current carrying capacity ensure stable operation at high power demands, protecting the battery from overload and overvoltage damage.
7. **Power Management and Load Switching**
This MOSFET can be used in a variety of power management and load switching applications, especially in power systems that require high current and low voltage. Its low on-resistance minimizes losses during load switching, thereby optimizing the energy efficiency of the entire system and is suitable for use in a variety of fields, including home appliances, communications equipment, and power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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