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SPB73N03S2L-08 G-VB Product details
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Product Introduction:
SPB73N03S2L-08 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current, low voltage power applications. The device has a maximum drain-source voltage (V_DS) of 30V, suitable for low voltage power management and high efficiency power conversion. The gate-source voltage (V_GS) of SPB73N03S2L-08 G-VB is ±20V at maximum, with a low threshold voltage (V_th) of 1.7V, ensuring stable turn-on at a lower gate voltage. The on-resistance (R_DS(ON)) of this MOSFET is 2.7mΩ (V_GS=4.5V) and 2.4mΩ (V_GS=10V), providing ultra-low conduction losses, enabling it to operate efficiently under high current loads. The maximum drain current (I_D) is 98A, which means that the device can handle larger current loads and is suitable for power-intensive power and battery management systems. Using Trench technology, this MOSFET provides excellent switching characteristics and low conduction losses, and is widely used in applications with high current and low voltage requirements.
SPB73N03S2L-08 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current, low voltage power applications. The device has a maximum drain-source voltage (V_DS) of 30V, suitable for low voltage power management and high efficiency power conversion. The gate-source voltage (V_GS) of SPB73N03S2L-08 G-VB is ±20V at maximum, with a low threshold voltage (V_th) of 1.7V, ensuring stable turn-on at a lower gate voltage. The on-resistance (R_DS(ON)) of this MOSFET is 2.7mΩ (V_GS=4.5V) and 2.4mΩ (V_GS=10V), providing ultra-low conduction losses, enabling it to operate efficiently under high current loads. The maximum drain current (I_D) is 98A, which means that the device can handle larger current loads and is suitable for power-intensive power and battery management systems. Using Trench technology, this MOSFET provides excellent switching characteristics and low conduction losses, and is widely used in applications with high current and low voltage requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package**: TO263
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ (VGS=4.5V)
- 2.4mΩ (VGS=10V)
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench (trench technology)
- **Application scenarios**: Suitable for high current power management, DC-DC converters, battery management systems, power-intensive modules and other fields.
- **Package**: TO263
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ (VGS=4.5V)
- 2.4mΩ (VGS=10V)
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench (trench technology)
- **Application scenarios**: Suitable for high current power management, DC-DC converters, battery management systems, power-intensive modules and other fields.
Domain and module applications：
Application areas and module examples:
1. **High current power management system**:
SPB73N03S2L-08 G-VB is suitable for high current power management systems, especially in battery-driven devices such as power tools, electric vehicles (EVs) and mobile devices. The MOSFET's 98A maximum drain current and ultra-low on-resistance (2.4mΩ) enable it to efficiently handle large currents, reduce heat loss and improve system efficiency. In these applications, the SPB73N03S2L-08 G-VB can be used as a switching element in power converters and switching power supplies to help achieve efficient power management and control.
2. **DC-DC converter**:
In a DC-DC converter, the SPB73N03S2L-08 G-VB can be used as the main switching element for voltage step-up or step-down. Due to its high current carrying capacity and low on-resistance, this MOSFET can improve conversion efficiency, especially in applications requiring high current and high efficiency, such as solar inverters, computer power supply systems, etc. Its 30V drain-source voltage and 98A maximum drain current make it suitable for high power density conversion modules, ensuring stable system operation and reducing heat generation.
3. **Battery Management System (BMS)**:
In the battery management system, the SPB73N03S2L-08 G-VB can be used to control the charging and discharging process of the battery. Due to its low on-resistance and high current carrying capacity, it can effectively control the current and protect the battery from overcurrent damage. Especially in electric vehicles (EV) and energy storage systems (such as UPS or home energy storage systems), the SPB73N03S2L-08 G-VB can improve the charging and discharging efficiency of the battery, extend the battery life, and improve the overall efficiency of the system.
4. **Power-intensive modules**:
Due to its high current and low on-resistance, the SPB73N03S2L-08 G-VB is widely used in power-intensive modules. For example, in high-performance computing, power amplifiers, and RF power devices, this MOSFET can be used as a switching element to provide efficient power conversion and regulation. In these applications, the high current capability and low loss characteristics of the MOSFET help reduce energy waste and improve the thermal management of the system.
5. **Motor drive systems**:
The SPB73N03S2L-08 G-VB is also suitable for high-efficiency motor drive systems, especially those that require high current drive. In power tools, home appliances, and electric vehicles (such as electric bicycles and electric vehicles), this MOSFET can be used as a switching element in the motor drive circuit to ensure efficient operation of the system by optimizing current transmission and improving power conversion efficiency.
1. **High current power management system**:
SPB73N03S2L-08 G-VB is suitable for high current power management systems, especially in battery-driven devices such as power tools, electric vehicles (EVs) and mobile devices. The MOSFET's 98A maximum drain current and ultra-low on-resistance (2.4mΩ) enable it to efficiently handle large currents, reduce heat loss and improve system efficiency. In these applications, the SPB73N03S2L-08 G-VB can be used as a switching element in power converters and switching power supplies to help achieve efficient power management and control.
2. **DC-DC converter**:
In a DC-DC converter, the SPB73N03S2L-08 G-VB can be used as the main switching element for voltage step-up or step-down. Due to its high current carrying capacity and low on-resistance, this MOSFET can improve conversion efficiency, especially in applications requiring high current and high efficiency, such as solar inverters, computer power supply systems, etc. Its 30V drain-source voltage and 98A maximum drain current make it suitable for high power density conversion modules, ensuring stable system operation and reducing heat generation.
3. **Battery Management System (BMS)**:
In the battery management system, the SPB73N03S2L-08 G-VB can be used to control the charging and discharging process of the battery. Due to its low on-resistance and high current carrying capacity, it can effectively control the current and protect the battery from overcurrent damage. Especially in electric vehicles (EV) and energy storage systems (such as UPS or home energy storage systems), the SPB73N03S2L-08 G-VB can improve the charging and discharging efficiency of the battery, extend the battery life, and improve the overall efficiency of the system.
4. **Power-intensive modules**:
Due to its high current and low on-resistance, the SPB73N03S2L-08 G-VB is widely used in power-intensive modules. For example, in high-performance computing, power amplifiers, and RF power devices, this MOSFET can be used as a switching element to provide efficient power conversion and regulation. In these applications, the high current capability and low loss characteristics of the MOSFET help reduce energy waste and improve the thermal management of the system.
5. **Motor drive systems**:
The SPB73N03S2L-08 G-VB is also suitable for high-efficiency motor drive systems, especially those that require high current drive. In power tools, home appliances, and electric vehicles (such as electric bicycles and electric vehicles), this MOSFET can be used as a switching element in the motor drive circuit to ensure efficient operation of the system by optimizing current transmission and improving power conversion efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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