中文
English
SPB42N03S2L13T-VB Product details
Back to previous pageProduct introduction：
# **Product Introduction**
SPB42N03S2L13T-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for low-voltage and high-current applications. This model has a maximum drain-source voltage (V_DS) of 30V, a maximum drain current (I_D) of 50A, and a very low on-resistance (R_DS(ON) = 12mΩ@V_GS = 10V). With its advanced Trench technology, this MOSFET can provide extremely high switching performance and very low power loss, and is particularly suitable for high-efficiency power systems, motor drives, power conversion and other fields.
SPB42N03S2L13T-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for low-voltage and high-current applications. This model has a maximum drain-source voltage (V_DS) of 30V, a maximum drain current (I_D) of 50A, and a very low on-resistance (R_DS(ON) = 12mΩ@V_GS = 10V). With its advanced Trench technology, this MOSFET can provide extremely high switching performance and very low power loss, and is particularly suitable for high-efficiency power systems, motor drives, power conversion and other fields.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Product parameter description**
- **Package type**: TO263
The TO263 package is suitable for high-power, high-current applications and has excellent thermal performance and heat dissipation capabilities. This packaging method can ensure stable operation of the MOSFET under high-power loads while reducing heat loss.
- **Configuration**: Single N-channel
Adopting N-channel configuration, it is suitable for most power switching circuits. Its low on-resistance and efficient current control capability make it perform well in power regulation and conversion.
- **V_DS (drain-source voltage)**: 30V
The maximum drain-source voltage of SPB42N03S2L13T-VB is 30V, which is suitable for low-voltage power supply and low-voltage power conversion applications, and can meet the needs of most power systems and motor drive systems.
- **V_GS (gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, which adapts to the general driving voltage range and ensures normal operation in different driving circuits.
- **V_th (gate threshold voltage)**: 1.7V
The gate threshold voltage of this MOSFET is 1.7V, which means that it can be turned on at a lower gate voltage, has a lower turn-on voltage threshold, and is suitable for low-voltage drive systems.
- **R_DS(ON) (on-resistance)**: 12mΩ@V_GS = 10V
The on-resistance of SPB42N03S2L13T-VB is 12mΩ when V_GS = 10V. This low value makes the MOSFET have extremely low power loss when working, which is particularly suitable for high-efficiency power conversion applications.
- **I_D (drain current)**: 50A
This MOSFET can withstand a maximum drain current of 50A, suitable for applications with high current control and high power drive, and can meet stringent current requirements.
- **Technology type**: Trench
Trench technology is an advanced process for MOSFET production that can significantly reduce on-resistance and improve thermal stability, providing higher power efficiency, and is particularly suitable for high-demand applications such as high-efficiency power supplies and motor drives.
- **Package type**: TO263
The TO263 package is suitable for high-power, high-current applications and has excellent thermal performance and heat dissipation capabilities. This packaging method can ensure stable operation of the MOSFET under high-power loads while reducing heat loss.
- **Configuration**: Single N-channel
Adopting N-channel configuration, it is suitable for most power switching circuits. Its low on-resistance and efficient current control capability make it perform well in power regulation and conversion.
- **V_DS (drain-source voltage)**: 30V
The maximum drain-source voltage of SPB42N03S2L13T-VB is 30V, which is suitable for low-voltage power supply and low-voltage power conversion applications, and can meet the needs of most power systems and motor drive systems.
- **V_GS (gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, which adapts to the general driving voltage range and ensures normal operation in different driving circuits.
- **V_th (gate threshold voltage)**: 1.7V
The gate threshold voltage of this MOSFET is 1.7V, which means that it can be turned on at a lower gate voltage, has a lower turn-on voltage threshold, and is suitable for low-voltage drive systems.
- **R_DS(ON) (on-resistance)**: 12mΩ@V_GS = 10V
The on-resistance of SPB42N03S2L13T-VB is 12mΩ when V_GS = 10V. This low value makes the MOSFET have extremely low power loss when working, which is particularly suitable for high-efficiency power conversion applications.
- **I_D (drain current)**: 50A
This MOSFET can withstand a maximum drain current of 50A, suitable for applications with high current control and high power drive, and can meet stringent current requirements.
- **Technology type**: Trench
Trench technology is an advanced process for MOSFET production that can significantly reduce on-resistance and improve thermal stability, providing higher power efficiency, and is particularly suitable for high-demand applications such as high-efficiency power supplies and motor drives.
Domain and module applications：
**Application fields and module examples**
1. **Efficient Power Conversion**
SPB42N03S2L13T-VB is particularly suitable for DC-DC converters and AC-DC power management systems, which can effectively control the switching operation of the power supply, reduce power loss and improve conversion efficiency.
**Example**: In a power adapter, SPB42N03S2L13T-VB can be used as a power switch to help convert high-voltage DC power into a stable low-voltage output to meet the needs of various low-voltage devices.
2. **Motor Driver Systems**
Due to its low on-resistance and high current carrying capacity, this MOSFET is suitable for switching elements in motor drive systems. It can efficiently control the starting, speed regulation and stopping processes of the motor, ensuring the stability and efficiency of the drive system.
**Example**: In power tools, the SPB42N03S2L13T-VB can be used as a power switch to control the flow of current when driving the motor, ensuring that the tool works efficiently while reducing energy loss.
3. **Battery Management Systems**
This MOSFET can be used in battery management systems, especially in the battery charging and discharging process. It can control the current flow during the charging process and protect the battery from damage due to overcurrent and overvoltage.
**Example**: In the battery management system (BMS) of electric vehicles, the SPB42N03S2L13T-VB can control the charging and discharging process of the battery pack, ensuring the safety and long life of the battery while optimizing the charging efficiency.
4. **Power Electronic Switching**
In various power electronic devices, SPB42N03S2L13T-VB can be used in high-frequency switching circuits, such as PWM control circuits, to provide high-efficiency and low-power loss power management.
**Example**: In solar inverters, SPB42N03S2L13T-VB can be used as a power switching element to help convert the DC power generated by solar panels into AC power and improve the overall efficiency of the system.
5. **Automotive Electronics**
This MOSFET is suitable for power control systems in electric vehicles, hybrid vehicles and other electrified vehicles, and can operate stably in strict working environments.
**Example**: In the power control module of electric vehicles, SPB42N03S2L13T-VB can be used as a high-efficiency switch to regulate the current flow during battery charging and discharging, improve battery charging efficiency and extend its service life.
6. **Low Voltage Battery Powered Devices**
Due to its low V_DS (30V) and low on-resistance, the SPB42N03S2L13T-VB is very suitable for low-voltage battery-powered devices, providing efficient power management and control for these devices.
**Example**: In the power module of a wearable device, the SPB42N03S2L13T-VB can be used as a key switching element in battery power management to help improve the device's operating efficiency and battery life.
1. **Efficient Power Conversion**
SPB42N03S2L13T-VB is particularly suitable for DC-DC converters and AC-DC power management systems, which can effectively control the switching operation of the power supply, reduce power loss and improve conversion efficiency.
**Example**: In a power adapter, SPB42N03S2L13T-VB can be used as a power switch to help convert high-voltage DC power into a stable low-voltage output to meet the needs of various low-voltage devices.
2. **Motor Driver Systems**
Due to its low on-resistance and high current carrying capacity, this MOSFET is suitable for switching elements in motor drive systems. It can efficiently control the starting, speed regulation and stopping processes of the motor, ensuring the stability and efficiency of the drive system.
**Example**: In power tools, the SPB42N03S2L13T-VB can be used as a power switch to control the flow of current when driving the motor, ensuring that the tool works efficiently while reducing energy loss.
3. **Battery Management Systems**
This MOSFET can be used in battery management systems, especially in the battery charging and discharging process. It can control the current flow during the charging process and protect the battery from damage due to overcurrent and overvoltage.
**Example**: In the battery management system (BMS) of electric vehicles, the SPB42N03S2L13T-VB can control the charging and discharging process of the battery pack, ensuring the safety and long life of the battery while optimizing the charging efficiency.
4. **Power Electronic Switching**
In various power electronic devices, SPB42N03S2L13T-VB can be used in high-frequency switching circuits, such as PWM control circuits, to provide high-efficiency and low-power loss power management.
**Example**: In solar inverters, SPB42N03S2L13T-VB can be used as a power switching element to help convert the DC power generated by solar panels into AC power and improve the overall efficiency of the system.
5. **Automotive Electronics**
This MOSFET is suitable for power control systems in electric vehicles, hybrid vehicles and other electrified vehicles, and can operate stably in strict working environments.
**Example**: In the power control module of electric vehicles, SPB42N03S2L13T-VB can be used as a high-efficiency switch to regulate the current flow during battery charging and discharging, improve battery charging efficiency and extend its service life.
6. **Low Voltage Battery Powered Devices**
Due to its low V_DS (30V) and low on-resistance, the SPB42N03S2L13T-VB is very suitable for low-voltage battery-powered devices, providing efficient power management and control for these devices.
**Example**: In the power module of a wearable device, the SPB42N03S2L13T-VB can be used as a key switching element in battery power management to help improve the device's operating efficiency and battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
