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SPB21N50C3-VB Product details
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SPB21N50C3-VB MOSFET Product Introduction
The SPB21N50C3-VB is a high-performance N-Channel MOSFET in a TO263 package designed for high-voltage applications. With a maximum drain-source voltage (VDS) of 650V, it is suitable for handling medium to high voltage loads, while having good current handling capability with a maximum drain current (ID) of 20A. Using SJ_Multi-EPI technology, the SPB21N50C3-VB provides excellent switching characteristics and low on-resistance (RDS(ON) = 160mΩ @ VGS = 10V), making it an excellent performer in power management, power conversion, and efficient power transmission systems. It is particularly suitable for applications that require higher voltages and higher currents, and can effectively reduce power losses and improve the overall efficiency of the system.
With its high voltage tolerance, this MOSFET is very suitable for high voltage and high power applications such as industrial power supplies, consumer electronics, LED drivers, automotive electronics, and power management systems.
The SPB21N50C3-VB is a high-performance N-Channel MOSFET in a TO263 package designed for high-voltage applications. With a maximum drain-source voltage (VDS) of 650V, it is suitable for handling medium to high voltage loads, while having good current handling capability with a maximum drain current (ID) of 20A. Using SJ_Multi-EPI technology, the SPB21N50C3-VB provides excellent switching characteristics and low on-resistance (RDS(ON) = 160mΩ @ VGS = 10V), making it an excellent performer in power management, power conversion, and efficient power transmission systems. It is particularly suitable for applications that require higher voltages and higher currents, and can effectively reduce power losses and improve the overall efficiency of the system.
With its high voltage tolerance, this MOSFET is very suitable for high voltage and high power applications such as industrial power supplies, consumer electronics, LED drivers, automotive electronics, and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SPB21N50C3-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Application areas**: Power conversion, power management, industrial power supply, automotive electronics, LED drive system, solar inverter, etc.
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Application areas**: Power conversion, power management, industrial power supply, automotive electronics, LED drive system, solar inverter, etc.
Domain and module applications：
Applications and Modules
SPB21N50C3-VB MOSFET is suitable for a variety of high-efficiency power conversion and power management applications due to its high withstand voltage, low on-resistance and high current handling capability. Here are some typical application areas:
1. **Industrial Power Supplies & Power Conversion**:
SPB21N50C3-VB is suitable for industrial power modules and high-power power conversion applications. Its high voltage carrying capacity (650V) makes it very suitable for use in industrial control systems, transmission motor drive systems, and high-voltage power converters, helping to improve the system's power transmission efficiency and reduce energy loss.
2. **Power Management Systems**:
In high-efficiency power management systems, SPB21N50C3-VB can be widely used in DC-DC converters, AC-DC power supplies, and switching power supplies. Due to its low on-resistance, it can provide low power consumption, efficient current transmission, and can maintain efficient operation under long-term high load, making it an ideal switching element in power supply systems.
3. **Automotive Electronics**:
This MOSFET is also very suitable for automotive electronic systems, especially power conversion modules in electric vehicles (EV) and hybrid electric vehicles (HEV). Its high voltage capability and excellent conduction characteristics ensure stable and efficient operation in battery management, drive motors and high-voltage power supply systems.
4. **LED Driver Systems**:
SPB21N50C3-VB is also widely used in LED driver systems, especially in high-power and high-efficiency LED lighting systems. Its high voltage carrying capacity can support the driving of multiple strings of LED lamp beads, while its low on-resistance helps to improve the efficiency of the system, reduce heat generation, and extend the life of the system.
5. **Solar Inverters**:
In solar power generation systems, SPB21N50C3-VB can be applied to inverter modules. Due to its high voltage and high current handling capabilities, this MOSFET can efficiently convert the DC power generated by solar panels and convert it into AC power suitable for grid transmission. Its low on-resistance ensures efficient energy conversion during the operation of the inverter.
6. **High Frequency Switching Power Supplies**:
Due to its low on-resistance and high voltage tolerance, this MOSFET is particularly suitable for high-frequency switching power supplies (such as communication base station power supplies, computer power supplies, etc.). In high-frequency environments, SPB21N50C3-VB can provide excellent switching performance, helping the system to maintain stability and improve conversion efficiency.
7. **UPS power supply (Uninterruptible Power Supplies)**:
In the uninterruptible power supply (UPS) system, SPB21N50C3-VB can be used as the core component of power conversion. Its high current and high voltage carrying capacity enables it to withstand continuous loads and quickly provide stable power output when the mains power is cut off, ensuring the reliability and stability of the system.
SPB21N50C3-VB MOSFET is suitable for a variety of high-efficiency power conversion and power management applications due to its high withstand voltage, low on-resistance and high current handling capability. Here are some typical application areas:
1. **Industrial Power Supplies & Power Conversion**:
SPB21N50C3-VB is suitable for industrial power modules and high-power power conversion applications. Its high voltage carrying capacity (650V) makes it very suitable for use in industrial control systems, transmission motor drive systems, and high-voltage power converters, helping to improve the system's power transmission efficiency and reduce energy loss.
2. **Power Management Systems**:
In high-efficiency power management systems, SPB21N50C3-VB can be widely used in DC-DC converters, AC-DC power supplies, and switching power supplies. Due to its low on-resistance, it can provide low power consumption, efficient current transmission, and can maintain efficient operation under long-term high load, making it an ideal switching element in power supply systems.
3. **Automotive Electronics**:
This MOSFET is also very suitable for automotive electronic systems, especially power conversion modules in electric vehicles (EV) and hybrid electric vehicles (HEV). Its high voltage capability and excellent conduction characteristics ensure stable and efficient operation in battery management, drive motors and high-voltage power supply systems.
4. **LED Driver Systems**:
SPB21N50C3-VB is also widely used in LED driver systems, especially in high-power and high-efficiency LED lighting systems. Its high voltage carrying capacity can support the driving of multiple strings of LED lamp beads, while its low on-resistance helps to improve the efficiency of the system, reduce heat generation, and extend the life of the system.
5. **Solar Inverters**:
In solar power generation systems, SPB21N50C3-VB can be applied to inverter modules. Due to its high voltage and high current handling capabilities, this MOSFET can efficiently convert the DC power generated by solar panels and convert it into AC power suitable for grid transmission. Its low on-resistance ensures efficient energy conversion during the operation of the inverter.
6. **High Frequency Switching Power Supplies**:
Due to its low on-resistance and high voltage tolerance, this MOSFET is particularly suitable for high-frequency switching power supplies (such as communication base station power supplies, computer power supplies, etc.). In high-frequency environments, SPB21N50C3-VB can provide excellent switching performance, helping the system to maintain stability and improve conversion efficiency.
7. **UPS power supply (Uninterruptible Power Supplies)**:
In the uninterruptible power supply (UPS) system, SPB21N50C3-VB can be used as the core component of power conversion. Its high current and high voltage carrying capacity enables it to withstand continuous loads and quickly provide stable power output when the mains power is cut off, ensuring the reliability and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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