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SPB18P06PG-VB Product details

Product introduction:

1. Product Introduction

**SPB18P06PG-VB** is a single P-channel MOSFET in TO263 package, designed for medium voltage and high current applications. With a drain-source voltage (VDS) of -60V, this MOSFET is suitable for negative supply voltage or power switch applications. Its gate-source voltage (VGS) is ±20V and can carry a maximum drain current of -30A. Its on-resistance (RDS(ON)) is 77mΩ at VGS=4.5V and 64mΩ at VGS=10V, with low conduction loss. The use of Trench technology enables this MOSFET to provide higher efficiency and lower heat loss at high currents. **SPB18P06PG-VB** is widely used in power management, motor control, load switching and other power conversion applications, especially for negative power supply circuits requiring P-channel MOSFETs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -60V -1.7V -30A 64mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
2. Detailed parameter description

| Parameter | Description|
|-----------------|-----------------------------------------|
| **Model** | SPB18P06PG-VB |
| **Package** | TO263 |
| **Configuration** | Single P-channel MOSFET |
| **VDS** | -60V |
| **VGS** | ±20V |
| **Vth** | -1.7V |
| **RDS(ON)** | 77mΩ@VGS=4.5V |
| **RDS(ON)** | 64mΩ@VGS=10V |
| **ID** | -30A |
| **Technology** | Trench (trench technology) |
| **Power dissipation** | 150W |
| **Maximum drain current** | -30A |
| **Maximum gate current** | ±30mA |
| **Switching time** | 50ns (typ.) |
| **Operating temperature range** | -55°C to 150°C |

Domain and module applications:

3. Application fields and modules

**SPB18P06PG-VB** As a P-channel MOSFET, its main features are low on-resistance (RDS(ON)) and high current carrying capacity, which is particularly suitable for scenarios requiring negative voltage operation. The following are some typical application fields and modules:

- **Negative power switch circuit**: Since P-channel MOSFET can realize switch control in negative power circuits, **SPB18P06PG-VB** is very advantageous in such applications. It is widely used in various negative power switch designs, such as negative power supply systems, negative voltage converters, negative voltage regulators, etc.

- **Power management system**: This MOSFET can be used in power management modules, especially in power systems that need to separate or regulate positive and negative power supplies, such as DC-DC converters and battery management systems. Its low RDS(ON) characteristics and large current carrying capacity make it perform well in the control of negative power rails.

- **Motor Control**: SPB18P06PG-VB is suitable for motor drive and control systems, especially in reverse current control of motors and motor speed regulators. It can effectively handle negative currents in motor drives and provide efficient switching control. It is widely used in motor control systems for power tools, home appliances, and electric vehicles.

- **Battery Management System (BMS)**: In the battery management system of electric vehicles (EVs) and energy storage systems, SPB18P06PG-VB can effectively control negative currents and battery charging and discharging processes to ensure battery safety and extend its service life. Its efficient switching performance is very important for optimizing the battery charging and discharging process.

- **Current Switching and Load Control**: SPB18P06PG-VB is widely used in various current switching modules and load switching circuits. In these applications, it can provide reliable switching performance, especially suitable for occasions requiring fast response, low conduction loss and high current carrying.

- **Power converter**: In various power converters, especially in applications requiring negative power switches, the SPB18P06PG-VB can provide efficient power conversion. It can optimize power loss and improve conversion efficiency, and is widely used in communication equipment, industrial power supplies, switching power supplies and other fields.

- **Reverse current protection circuit**: In some reverse current protection circuits, P-channel MOSFETs can be used to isolate unwanted reverse currents. **SPB18P06PG-VB** can provide efficient reverse current protection in such circuits, effectively avoiding circuit damage.

In short, **SPB18P06PG-VB**, as an efficient, low on-resistance P-channel MOSFET, is suitable for power management, power conversion, motor control and other fields, and is particularly suitable for applications such as negative power switches, negative current control and battery management, and can provide excellent current control and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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