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SPB16N50C3-VB Product details
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# **Product Introduction**
SPB16N50C3-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for high-voltage and high-current power electronics applications. This model has a maximum drain-source voltage (V_DS) of 650V and a maximum drain current (I_D) of 15A. It adopts advanced SJ_Multi-EPI technology and has a low on-resistance (R_DS(ON) = 300mΩ@V_GS = 10V). The design of SPB16N50C3-VB focuses on improving switching efficiency and reducing power losses. It is suitable for applications such as power systems, inverters and industrial drives that require efficient current control.
SPB16N50C3-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for high-voltage and high-current power electronics applications. This model has a maximum drain-source voltage (V_DS) of 650V and a maximum drain current (I_D) of 15A. It adopts advanced SJ_Multi-EPI technology and has a low on-resistance (R_DS(ON) = 300mΩ@V_GS = 10V). The design of SPB16N50C3-VB focuses on improving switching efficiency and reducing power losses. It is suitable for applications such as power systems, inverters and industrial drives that require efficient current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Product parameter description**
- **Package type**: TO263
TO263 package is a common power MOSFET package with good heat dissipation performance, especially suitable for high power and high current applications. It supports higher power density, reduces space occupation, and facilitates thermal management.
- **Configuration**: Single N-channel
Adopting N-channel MOSFET configuration, it provides low on-resistance and good switching performance, suitable for use as a power switch and current regulation in electronic control.
- **V_DS (drain-source voltage)**: 650V
The maximum drain-source voltage of SPB16N50C3-VB is 650V, which is suitable for high voltage applications such as AC power supply, inverter and various power conversion equipment, and can withstand higher voltage loads.
- **V_GS (gate-source voltage)**: ±30V
The maximum gate-source voltage is ±30V, which adapts to the standard gate drive voltage range and can be used in a variety of different drive circuits.
- **V_th (gate threshold voltage)**: 3.5V
The gate threshold voltage of this MOSFET is 3.5V, which ensures good conduction under normal operating voltage and is suitable for low-power control circuits.
- **R_DS(ON) (on-resistance)**: 300mΩ@V_GS = 10V
The on-resistance of SPB16N50C3-VB at a gate voltage of 10V is 300mΩ. Although it is not as good as some low on-resistance MOSFETs, it is still suitable for standard applications that require a certain current flow and can provide relatively low power loss.
- **I_D (Drain Current)**: 15A
This MOSFET has a high drain current capability with a maximum current rating of 15A, which is well suited for medium to high current load applications.
- **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology is a multi-substrate technology used to improve the performance of MOSFETs, reduce on-resistance and improve thermal stability. It provides higher efficiency and better thermal management, especially for high voltage, high current applications.
- **Package type**: TO263
TO263 package is a common power MOSFET package with good heat dissipation performance, especially suitable for high power and high current applications. It supports higher power density, reduces space occupation, and facilitates thermal management.
- **Configuration**: Single N-channel
Adopting N-channel MOSFET configuration, it provides low on-resistance and good switching performance, suitable for use as a power switch and current regulation in electronic control.
- **V_DS (drain-source voltage)**: 650V
The maximum drain-source voltage of SPB16N50C3-VB is 650V, which is suitable for high voltage applications such as AC power supply, inverter and various power conversion equipment, and can withstand higher voltage loads.
- **V_GS (gate-source voltage)**: ±30V
The maximum gate-source voltage is ±30V, which adapts to the standard gate drive voltage range and can be used in a variety of different drive circuits.
- **V_th (gate threshold voltage)**: 3.5V
The gate threshold voltage of this MOSFET is 3.5V, which ensures good conduction under normal operating voltage and is suitable for low-power control circuits.
- **R_DS(ON) (on-resistance)**: 300mΩ@V_GS = 10V
The on-resistance of SPB16N50C3-VB at a gate voltage of 10V is 300mΩ. Although it is not as good as some low on-resistance MOSFETs, it is still suitable for standard applications that require a certain current flow and can provide relatively low power loss.
- **I_D (Drain Current)**: 15A
This MOSFET has a high drain current capability with a maximum current rating of 15A, which is well suited for medium to high current load applications.
- **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology is a multi-substrate technology used to improve the performance of MOSFETs, reduce on-resistance and improve thermal stability. It provides higher efficiency and better thermal management, especially for high voltage, high current applications.
Domain and module applications：
**Application fields and module examples**
1. **Power Supply Management**
SPB16N50C3-VB can be widely used in power management modules, especially in efficient DC-DC or AC-DC converters, to help optimize power conversion and reduce power loss.
**Example**: In the power management system of the data center, SPB16N50C3-VB can be used as an efficient switching element to convert high-voltage power supply to lower voltage power supply to keep the system efficient and stable.
2. **Industrial Drive Systems**
Due to its high current and high voltage carrying capacity, this MOSFET is particularly suitable for industrial motor drive systems. It can effectively switch high voltage, control the operation of the motor, and improve the start and stop response of the motor.
**Example**: In industrial automation equipment, SPB16N50C3-VB can be used as a power switch in the motor drive control circuit to adjust the speed and start and stop process of the motor.
3. **Inverter Application**
This MOSFET is suitable for various inverter applications, such as solar inverters and UPS (uninterruptible power supply) systems. It can efficiently convert DC to AC, support high power conversion, and reduce energy loss.
**Example**: In a solar photovoltaic system, the SPB16N50C3-VB can be used as a switching element in the inverter to help convert the DC power generated by the photovoltaic panel into AC power and pass it through the grid or for home/commercial use.
4. **Electric Vehicle (EV) Battery Management System (BMS)**
In the battery management system of electric vehicles, the SPB16N50C3-VB can be used as a key component for high-voltage battery charge and discharge management, controlling the battery charging and discharging process to ensure battery stability and safety.
**Example**: In the battery management module of electric vehicles, SPB16N50C3-VB can be used as a power switch to regulate the current flow during the battery charging and discharging process while ensuring efficient energy conversion.
5. **Power Tools**
SPB16N50C3-VB is suitable for power tools that require high voltage and high current control, providing stable power control and maintaining low power loss under high load conditions.
**Example**: In the drive system of power tools, SPB16N50C3-VB can be used as a switching element to control the operation of the motor, and is used to realize the power tool's switch control, speed regulation and other functions.
6. **Efficient Power Conversion**
This MOSFET is particularly suitable for working in efficient power converters, suitable for various battery-powered devices, electric vehicle charging piles and other fields, and can achieve efficient power management and low power loss.
**Example**: In the power conversion system of an electric vehicle charging station, the SPB16N50C3-VB can be used as a power switch to help achieve efficient conversion of DC power and optimize the battery charging process.
1. **Power Supply Management**
SPB16N50C3-VB can be widely used in power management modules, especially in efficient DC-DC or AC-DC converters, to help optimize power conversion and reduce power loss.
**Example**: In the power management system of the data center, SPB16N50C3-VB can be used as an efficient switching element to convert high-voltage power supply to lower voltage power supply to keep the system efficient and stable.
2. **Industrial Drive Systems**
Due to its high current and high voltage carrying capacity, this MOSFET is particularly suitable for industrial motor drive systems. It can effectively switch high voltage, control the operation of the motor, and improve the start and stop response of the motor.
**Example**: In industrial automation equipment, SPB16N50C3-VB can be used as a power switch in the motor drive control circuit to adjust the speed and start and stop process of the motor.
3. **Inverter Application**
This MOSFET is suitable for various inverter applications, such as solar inverters and UPS (uninterruptible power supply) systems. It can efficiently convert DC to AC, support high power conversion, and reduce energy loss.
**Example**: In a solar photovoltaic system, the SPB16N50C3-VB can be used as a switching element in the inverter to help convert the DC power generated by the photovoltaic panel into AC power and pass it through the grid or for home/commercial use.
4. **Electric Vehicle (EV) Battery Management System (BMS)**
In the battery management system of electric vehicles, the SPB16N50C3-VB can be used as a key component for high-voltage battery charge and discharge management, controlling the battery charging and discharging process to ensure battery stability and safety.
**Example**: In the battery management module of electric vehicles, SPB16N50C3-VB can be used as a power switch to regulate the current flow during the battery charging and discharging process while ensuring efficient energy conversion.
5. **Power Tools**
SPB16N50C3-VB is suitable for power tools that require high voltage and high current control, providing stable power control and maintaining low power loss under high load conditions.
**Example**: In the drive system of power tools, SPB16N50C3-VB can be used as a switching element to control the operation of the motor, and is used to realize the power tool's switch control, speed regulation and other functions.
6. **Efficient Power Conversion**
This MOSFET is particularly suitable for working in efficient power converters, suitable for various battery-powered devices, electric vehicle charging piles and other fields, and can achieve efficient power management and low power loss.
**Example**: In the power conversion system of an electric vehicle charging station, the SPB16N50C3-VB can be used as a power switch to help achieve efficient conversion of DC power and optimize the battery charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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