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SPB10N10L G-VB Product details
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Product Introduction:
SPB10N10L G-VB is a single N-channel MOSFET in TO263 package, designed for medium power power switching and power management applications. The maximum drain-source voltage (V_DS) of the device is 100V, which is suitable for medium and low voltage power control systems. The maximum gate-source voltage (V_GS) of SPB10N10L G-VB is ±20V, and the threshold voltage (V_th) is 1.8V, which can ensure stable turn-on at a lower gate voltage. The on-resistance (R_DS(ON)) of this MOSFET is 100mΩ (V_GS=10V), which makes the device have good efficiency at higher currents, and the maximum drain current (I_D) is 20A, which is suitable for power control applications with larger currents. The device adopts Trench technology, providing excellent switching characteristics and low conduction losses, enabling it to provide stable performance in many power electronic systems.
SPB10N10L G-VB is a single N-channel MOSFET in TO263 package, designed for medium power power switching and power management applications. The maximum drain-source voltage (V_DS) of the device is 100V, which is suitable for medium and low voltage power control systems. The maximum gate-source voltage (V_GS) of SPB10N10L G-VB is ±20V, and the threshold voltage (V_th) is 1.8V, which can ensure stable turn-on at a lower gate voltage. The on-resistance (R_DS(ON)) of this MOSFET is 100mΩ (V_GS=10V), which makes the device have good efficiency at higher currents, and the maximum drain current (I_D) is 20A, which is suitable for power control applications with larger currents. The device adopts Trench technology, providing excellent switching characteristics and low conduction losses, enabling it to provide stable performance in many power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package**: TO263
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ (VGS=10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench (trench technology)
- **Application scenarios**: Suitable for medium power power management, switching power supply, DC-DC converter, motor drive and other fields.
- **Package**: TO263
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ (VGS=10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench (trench technology)
- **Application scenarios**: Suitable for medium power power management, switching power supply, DC-DC converter, motor drive and other fields.
Domain and module applications：
Application fields and module examples:
1. **Medium power switching power supply (SMPS)**:
SPB10N10L G-VB is suitable for medium power switching power supply (SMPS) systems. In these systems, the MOSFET can be used as a switching element in the power converter to efficiently convert the input voltage to the required output voltage. Due to its 100V withstand voltage and 100mΩ on-resistance, it is suitable for loads of about 20A current and can operate in an efficient and stable state. This MOSFET can be used in computer power supplies, telecommunications power supplies, and industrial power modules.
2. **DC-DC converter**:
In DC-DC converters, SPB10N10L G-VB can be used as a power switching element to achieve voltage step-up or step-down. The low on-resistance and high maximum current carrying capacity of this MOSFET enable it to play an important role in efficient power conversion. Whether used for voltage regulation of battery-powered devices or providing power for other power requirements, the SPB10N10L G-VB can maintain high efficiency and stable operation in applications requiring higher load current and low voltage.
3. **Motor drive system**:
In motor drive systems, the SPB10N10L G-VB is suitable for driving DC motors and stepper motors, especially in industrial automation, home appliances, and small power tools. The 20A current carrying capacity of this MOSFET enables it to handle medium-power motor loads, while its low on-resistance helps reduce energy loss and heat generation, providing higher system efficiency.
4. **Battery Management System (BMS)**:
In battery management systems, the SPB10N10L G-VB can be used as a switching element for battery charge and discharge control. It is particularly suitable for applications that require precise control of battery voltage and current, such as electric vehicles (EVs) and energy storage systems. Its 100V withstand voltage and 20A current carrying capacity enable it to operate efficiently in high current charging and discharging situations, helping to optimize battery performance and life.
5. **Power Regulation and Load Switch**:
SPB10N10L G-VB is also widely used in power regulation systems for load switches and power regulators. In these applications, the low on-resistance of the MOSFET ensures lower power losses and provides stable performance in situations that require fast response and high current carrying. This is an essential switching element for industrial equipment, automation control, and power distribution systems.
1. **Medium power switching power supply (SMPS)**:
SPB10N10L G-VB is suitable for medium power switching power supply (SMPS) systems. In these systems, the MOSFET can be used as a switching element in the power converter to efficiently convert the input voltage to the required output voltage. Due to its 100V withstand voltage and 100mΩ on-resistance, it is suitable for loads of about 20A current and can operate in an efficient and stable state. This MOSFET can be used in computer power supplies, telecommunications power supplies, and industrial power modules.
2. **DC-DC converter**:
In DC-DC converters, SPB10N10L G-VB can be used as a power switching element to achieve voltage step-up or step-down. The low on-resistance and high maximum current carrying capacity of this MOSFET enable it to play an important role in efficient power conversion. Whether used for voltage regulation of battery-powered devices or providing power for other power requirements, the SPB10N10L G-VB can maintain high efficiency and stable operation in applications requiring higher load current and low voltage.
3. **Motor drive system**:
In motor drive systems, the SPB10N10L G-VB is suitable for driving DC motors and stepper motors, especially in industrial automation, home appliances, and small power tools. The 20A current carrying capacity of this MOSFET enables it to handle medium-power motor loads, while its low on-resistance helps reduce energy loss and heat generation, providing higher system efficiency.
4. **Battery Management System (BMS)**:
In battery management systems, the SPB10N10L G-VB can be used as a switching element for battery charge and discharge control. It is particularly suitable for applications that require precise control of battery voltage and current, such as electric vehicles (EVs) and energy storage systems. Its 100V withstand voltage and 20A current carrying capacity enable it to operate efficiently in high current charging and discharging situations, helping to optimize battery performance and life.
5. **Power Regulation and Load Switch**:
SPB10N10L G-VB is also widely used in power regulation systems for load switches and power regulators. In these applications, the low on-resistance of the MOSFET ensures lower power losses and provides stable performance in situations that require fast response and high current carrying. This is an essential switching element for industrial equipment, automation control, and power distribution systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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