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SPB100N06S2-05-VB Product details
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SPB100N06S2-05-VB Product Introduction
SPB100N06S2-05-VB is a **Single-N-Channel** **MOSFET**, using **TO263** package, with **60V** maximum drain-source voltage (VDS) and **150A** maximum drain current (ID). This model is based on **Trench** technology and has extremely low **RDS(ON)** on-resistance (**4mΩ** @ VGS = 10V), making it very efficient, especially suitable for high-power applications that require high current and low conduction losses. SPB100N06S2-05-VB is a high-performance switching device that is widely used in **electric vehicles, power supply systems, power converters** and other fields, providing excellent switching performance and current control capabilities.
SPB100N06S2-05-VB is a **Single-N-Channel** **MOSFET**, using **TO263** package, with **60V** maximum drain-source voltage (VDS) and **150A** maximum drain current (ID). This model is based on **Trench** technology and has extremely low **RDS(ON)** on-resistance (**4mΩ** @ VGS = 10V), making it very efficient, especially suitable for high-power applications that require high current and low conduction losses. SPB100N06S2-05-VB is a high-performance switching device that is widely used in **electric vehicles, power supply systems, power converters** and other fields, providing excellent switching performance and current control capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SPB100N06S2-05-VB Detailed parameter description
- **Model**: SPB100N06S2-05-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Maximum gate-source voltage (VGS(max))**: ±20V
- **Maximum junction temperature (Tj)**: 150°C
- **Operating temperature range (Tj): -55°C to 150°C
- **Thermal resistance (RthJC): 0.4°C/W
- **Rated power (Pd): 100W (depending on heat dissipation conditions)
- **Technology: Trench
- **Junction temperature (Tj): 150°C
- **Model**: SPB100N06S2-05-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Maximum gate-source voltage (VGS(max))**: ±20V
- **Maximum junction temperature (Tj)**: 150°C
- **Operating temperature range (Tj): -55°C to 150°C
- **Thermal resistance (RthJC): 0.4°C/W
- **Rated power (Pd): 100W (depending on heat dissipation conditions)
- **Technology: Trench
- **Junction temperature (Tj): 150°C
Domain and module applications：
Application fields and module examples
1. **Electric vehicle (EV) drive system**:
SPB100N06S2-05-VB is an ideal choice for **battery management system** (BMS) and **motor drive** in electric vehicles. Due to its high current carrying capacity and extremely low **RDS(ON)**, it can effectively reduce power loss and ensure efficient and stable power transmission, which is particularly suitable for battery power and drive modules of electric vehicles.
2. **High-efficiency power converter**:
In **DC-DC converter** and **AC-DC power converter**, SPB100N06S2-05-VB can be used as a power switch to handle high-current switching operations. Due to its low **RDS(ON)**, this MOSFET can provide lower conduction losses at high-frequency switching and improve power conversion efficiency, which is particularly suitable for **high-efficiency power module** and **regulated power supply** systems.
3. **Power Electronics Devices**:
SPB100N06S2-05-VB is suitable for various **power electronic devices**, including **inverters** and **frequency converters**. In these applications, MOSFET is used as a switching element to control the transmission of power, especially in the case of high switching frequency and high current load, which can effectively reduce energy loss and heat accumulation and improve system efficiency.
4. **Data Center Power Management**:
In the power management system of **data center**, SPB100N06S2-05-VB is widely used in efficient power supply and conversion systems. Due to its excellent high current carrying capacity and extremely low on-resistance, this MOSFET can meet the stringent requirements of data center for power stability and efficiency.
5. **Solar Inverters**:
In **Solar Inverters**, the SPB100N06S2-05-VB can be used as a power switch to control the conversion of DC to AC, especially for applications that require efficient energy conversion and low losses. Its high current capability enables it to handle the larger currents generated by solar panels, ensuring stable operation of the system.
6. **Power Tools and Appliances**:
The SPB100N06S2-05-VB is also suitable for **power tools** and **high-power appliances**, such as electric motors and high-efficiency motor drives. In these applications, the MOSFET can efficiently control the starting and stopping of the motor, reduce energy losses, and improve the response speed and stability of the overall system.
1. **Electric vehicle (EV) drive system**:
SPB100N06S2-05-VB is an ideal choice for **battery management system** (BMS) and **motor drive** in electric vehicles. Due to its high current carrying capacity and extremely low **RDS(ON)**, it can effectively reduce power loss and ensure efficient and stable power transmission, which is particularly suitable for battery power and drive modules of electric vehicles.
2. **High-efficiency power converter**:
In **DC-DC converter** and **AC-DC power converter**, SPB100N06S2-05-VB can be used as a power switch to handle high-current switching operations. Due to its low **RDS(ON)**, this MOSFET can provide lower conduction losses at high-frequency switching and improve power conversion efficiency, which is particularly suitable for **high-efficiency power module** and **regulated power supply** systems.
3. **Power Electronics Devices**:
SPB100N06S2-05-VB is suitable for various **power electronic devices**, including **inverters** and **frequency converters**. In these applications, MOSFET is used as a switching element to control the transmission of power, especially in the case of high switching frequency and high current load, which can effectively reduce energy loss and heat accumulation and improve system efficiency.
4. **Data Center Power Management**:
In the power management system of **data center**, SPB100N06S2-05-VB is widely used in efficient power supply and conversion systems. Due to its excellent high current carrying capacity and extremely low on-resistance, this MOSFET can meet the stringent requirements of data center for power stability and efficiency.
5. **Solar Inverters**:
In **Solar Inverters**, the SPB100N06S2-05-VB can be used as a power switch to control the conversion of DC to AC, especially for applications that require efficient energy conversion and low losses. Its high current capability enables it to handle the larger currents generated by solar panels, ensuring stable operation of the system.
6. **Power Tools and Appliances**:
The SPB100N06S2-05-VB is also suitable for **power tools** and **high-power appliances**, such as electric motors and high-efficiency motor drives. In these applications, the MOSFET can efficiently control the starting and stopping of the motor, reduce energy losses, and improve the response speed and stability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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