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SPB08P06P G-VB Product details
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SPB08P06P G-VB Product Introduction
SPB08P06P G-VB is a **Single-P-Channel** MOSFET, using **TO263** package, with **-60V** drain-source voltage (VDS) and **-30A** maximum drain current (ID). This model is based on **Trench** technology, with low **RDS(ON)** on-resistance (**77mΩ** @ VGS = 4.5V, **64mΩ** @ VGS = 10V), which can provide efficient power switching performance and is widely used in low-voltage, high-current load switches and power management systems. SPB08P06P G-VB is suitable for high-efficiency applications such as **power tools, consumer electronics, and power management**, especially in environments requiring high switching frequency and low conduction loss.
SPB08P06P G-VB is a **Single-P-Channel** MOSFET, using **TO263** package, with **-60V** drain-source voltage (VDS) and **-30A** maximum drain current (ID). This model is based on **Trench** technology, with low **RDS(ON)** on-resistance (**77mΩ** @ VGS = 4.5V, **64mΩ** @ VGS = 10V), which can provide efficient power switching performance and is widely used in low-voltage, high-current load switches and power management systems. SPB08P06P G-VB is suitable for high-efficiency applications such as **power tools, consumer electronics, and power management**, especially in environments requiring high switching frequency and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
SPB08P06P G-VB Detailed parameter description
- **Model**: SPB08P06P G-VB
- **Package type**: TO263
- **Configuration**: Single P-channel (Single-P-Channel)
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 77mΩ @ VGS = 4.5V, 64mΩ @ VGS = 10V
- **Drain current (ID)**: -30A
- **Maximum gate-source voltage (VGS(max))**: ±20V
- **Maximum junction temperature (Tj)**: 150°C
- **Thermal resistance (RthJC)**: 62.5°C/W
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Technology**: Trench
- **Rated power (Pd)**: 100W (depending on cooling conditions)
- **Model**: SPB08P06P G-VB
- **Package type**: TO263
- **Configuration**: Single P-channel (Single-P-Channel)
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 77mΩ @ VGS = 4.5V, 64mΩ @ VGS = 10V
- **Drain current (ID)**: -30A
- **Maximum gate-source voltage (VGS(max))**: ±20V
- **Maximum junction temperature (Tj)**: 150°C
- **Thermal resistance (RthJC)**: 62.5°C/W
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Technology**: Trench
- **Rated power (Pd)**: 100W (depending on cooling conditions)
Domain and module applications：
Application fields and module examples: 1. **Power management and switching power supply: SPB08P06P G-VB is suitable for **power management modules** such as **DC-DC converter** and **AC-DC converter**, especially in low voltage, high current load switch applications. Due to its low **RDS(ON)**, it can effectively reduce conduction loss and improve power efficiency, and is suitable for high-efficiency power management, voltage-stabilized power supply and other fields. 2. **Power tool drive system: SPB08P06P G-VB can be used as a power switch controller in **power tools**, such as **electric screwdrivers** and **electric drills**, to ensure high current switching operation. The MOSFET provides low on-resistance to ensure the efficiency and stability of power tools under long-term operation.
3. **Automotive Electronic Systems**:
SPB08P06P G-VB is suitable for high current, low voltage applications such as battery management systems (BMS), inverter control, and motor drives in **automotive electronics**. Its excellent conduction performance and high current carrying capacity ensure efficient management of battery systems and reliable operation of motor drives.
4. **Consumer Electronics**:
This MOSFET can be used in modules such as battery charging management and power control in **consumer electronics** products. Especially in **battery protection circuits** of devices such as **smartphones and tablets**, it provides efficient power regulation and current switching to protect batteries from overvoltage or overcurrent damage.
5. **Automobiles and Electric Vehicles (EV)**:
In **electric vehicles** (such as electric bicycles, electric scooters, etc.), SPB08P06P G-VB can be used in circuits such as battery management and power drives. Its **-60V** drain-source voltage and **-30A** drain current capability enable it to handle larger power loads, ensuring system stability and efficient operation.
6. **Low-power load switch**:
SPB08P06P G-VB is suitable for **low-power load switch** circuits, such as **LED driver**, **low-power relay control**, etc., providing efficient and reliable switching performance, supporting high-frequency switching operations, and is particularly suitable for applications that require fast response and low power loss.
3. **Automotive Electronic Systems**:
SPB08P06P G-VB is suitable for high current, low voltage applications such as battery management systems (BMS), inverter control, and motor drives in **automotive electronics**. Its excellent conduction performance and high current carrying capacity ensure efficient management of battery systems and reliable operation of motor drives.
4. **Consumer Electronics**:
This MOSFET can be used in modules such as battery charging management and power control in **consumer electronics** products. Especially in **battery protection circuits** of devices such as **smartphones and tablets**, it provides efficient power regulation and current switching to protect batteries from overvoltage or overcurrent damage.
5. **Automobiles and Electric Vehicles (EV)**:
In **electric vehicles** (such as electric bicycles, electric scooters, etc.), SPB08P06P G-VB can be used in circuits such as battery management and power drives. Its **-60V** drain-source voltage and **-30A** drain current capability enable it to handle larger power loads, ensuring system stability and efficient operation.
6. **Low-power load switch**:
SPB08P06P G-VB is suitable for **low-power load switch** circuits, such as **LED driver**, **low-power relay control**, etc., providing efficient and reliable switching performance, supporting high-frequency switching operations, and is particularly suitable for applications that require fast response and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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