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SPA11N60C2-VB Product details

Product introduction:

# **Product Introduction**

The SPA11N60C2-VB is a single N-channel MOSFET in a TO220F package with Plannar technology and a maximum drain-source voltage (V_DS) of 650V, making it ideal for high voltage switching applications. Its low on-resistance (320mΩ@V_GS = 10V) and high drain current capability (20A) make it an ideal choice for power management, inverters, motor control and other high power applications. The SPA11N60C2-VB provides stable performance and is capable of operating in high load current and high voltage environments, while having low thermal losses and high reliability, making it suitable for most power electronics and industrial control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 320mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
**Product parameter description**

- **Package type**: TO220F
The TO220F package is suitable for applications with higher power, especially for situations where effective heat dissipation is performed through a heat sink, ensuring stable operation of the MOSFET under high power loads.

- **Configuration**: Single N-channel
Adopts N-channel configuration, suitable for common switch control and load drive applications.

- **V_DS (drain-source voltage)**: 650V
With a drain-source voltage tolerance of 650V, it can operate in a high voltage environment and is suitable for high voltage applications such as power equipment, inverters, and power switching circuits.

- **V_GS (gate-source voltage)**: ±30V
The supported gate-source voltage range is ±30V, which is compatible with most control circuits and can be directly used with common logic level drive circuits.

- **V_th (gate threshold voltage)**: 3.5V
The gate threshold voltage is 3.5V, and the low threshold enables it to turn on at a lower driving voltage, optimizing the switching response speed.

- **R_DS(ON) (on-resistance)**: 320mΩ@V_GS = 10V
The on-resistance is 320mΩ, which means that even under high current operation, the power loss is low, which helps to improve efficiency and reduce heat generation.

- **I_D (drain current)**: 20A
The maximum drain current is 20A, which is suitable for medium to high power switching and driving applications, and can support larger load currents.

- **Technology type**: Plannar
Using Plannar technology, it is stable and mature, suitable for long-term, high-power workloads.

Domain and module applications:

**Applications and Module Examples**

1. **Power Supply and Switching**
The high withstand voltage and low on-resistance of the SPA11N60C2-VB make it ideal for power management applications, especially for power conversion, regulation and switching circuits. Its excellent switching performance ensures stability under high load currents, suitable for AC-DC and DC-DC power supply systems.

**Example**: In an uninterruptible power supply (UPS) system, the SPA11N60C2-VB can be used as the main power switch element to provide efficient power conversion and load switching, ensuring stable operation of the power supply system.

2. **Inverters and Power Conversion**
Due to its 650V drain-source voltage and high current carrying capacity, the SPA11N60C2-VB is particularly suitable for high voltage inverters, frequency converters and other power conversion equipment. Its low on-resistance helps reduce switching losses and improves system efficiency.

**Example**: In a solar inverter, the SPA11N60C2-VB can be used as a power switch to help convert DC power to AC power for the grid or load. In high voltage and high current environments, this MOSFET ensures stable inverter operation.

3. **Motor Control Systems**
The high current capability (20A) and low on-resistance of this MOSFET make it suitable for motor drive systems, especially in industrial automation, home appliances and power tools. It can effectively regulate the flow of current to drive the motor.

**Example**: In a motor drive module, the SPA11N60C2-VB can be used to control the speed and direction of the motor. Its low power loss and high reliability ensure the efficient operation of the motor drive system.

4. **Battery Management Systems (BMS)**
The high voltage withstand capability and low on-resistance of this MOSFET make it an ideal choice for battery management systems (BMS), especially for battery protection and charge and discharge control of high voltage battery packs.

**Example**: In the battery management system of electric vehicles (EVs), SPA11N60C2-VB can be used as a switching element to help regulate the charging and discharging current of the battery to ensure the safety and efficiency of the battery during operation.

5. **High Power Switching Control**
Due to its high voltage withstand and high current carrying capacity, SPA11N60C2-VB is also widely used in fields that require high power switching control, especially in power electronics, automotive and other industrial applications.

**Example**: In power transmission and distribution systems, SPA11N60C2-VB can be used as a main power switch element to control the flow of power and ensure the stable operation of the power system.

6. **High-efficiency power regulation and voltage stabilization**
SPA11N60C2-VB can also be used in high-efficiency power regulation and voltage stabilization modules, especially in situations where high voltage regulation and high current transmission are required.

**Example**: In power converters and voltage stabilizers, SPA11N60C2-VB can be used as a power switch to help regulate voltage and current and ensure the stability of power output.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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