Product introduction：
SP8M7-TB-VB Product Introduction:
**SP8M7-TB-VB** is a **dual NP-channel** MOSFET in **SOP8** package, suitable for a variety of power and load drive applications. The **VDS** (drain-source voltage) of this device is **±30V**, which supports operation in high-voltage environments. Its **VGS** operating voltage range is **±20V**, which enables it to adapt to various standard drive voltage requirements. **The threshold voltage (Vth)** is **1.6V** (N channel) and **-1.7V** (P channel), respectively, which can be turned on at low voltage to ensure fast response.
In terms of on-resistance, when SP8M7-TB-VB is **VGS = 4.5V**, the **RDS(ON)** of the N-channel is **24mΩ**, and the **RDS(ON)** of the P-channel is **50mΩ**; when **VGS = 10V**, the **RDS(ON)** of the N-channel is **18mΩ**, and the **RDS(ON)** of the P-channel is **40mΩ**. These low on-resistance values ensure that the device has excellent current conduction capability and can effectively reduce power loss and heat generation. The **maximum current (ID)** is **±8A**, which is suitable for occasions with medium power requirements.
Using **Trench** technology, SP8M7-TB-VB can effectively improve switching performance and reliability while ensuring low on-resistance. It is a high-performance bipolar MOSFET.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
SP8M7-TB-VB Detailed parameter description:
- **Package type**: SOP8
- **Configuration**: Dual NP channel
- **VDS**: ±30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- **VGS = 4.5V**:
- N channel: 24mΩ
- P channel: 50mΩ
- **VGS = 10V**:
- N channel: 18mΩ
- P channel: 40mΩ
- **Maximum current (ID)**:
- N channel: +8A
- P channel: -8A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples:
1. **Power converter**:
SP8M7-TB-VB is widely used in **DC-DC converter**, especially for medium-power power modules. Due to its low on-resistance and moderate current carrying capacity, it can improve power conversion efficiency and reduce heat accumulation, especially in smaller power modules with high heat dissipation requirements.
2. **Battery Management System (BMS)**:
In a battery management system, SP8M7-TB-VB can be used for battery protection and management. For example, in a **battery charger** or **battery equalizer**, as a **current switch** and **battery protection switch**, it provides low-power, fast-response current control and effectively extends battery life.
3. **LED drive circuit**:
This MOSFET can be used in **LED lighting drive circuit**, especially when the system requires efficient and stable current control. Its low **RDS(ON)** can reduce the loss when driving current, ensuring the brightness and service life of LED lamps, especially in constant current driving mode.
4. **Switching Power Supply (SMPS)**:
In the switching power supply system, SP8M7-TB-VB can be used as a switching device in **AC-DC converter** or **DC-DC converter**. Its low on-resistance and fast response capability make it an ideal choice for efficient energy conversion, especially in high-frequency switching applications.
5. **Power Amplifier and Motor Drive**:
SP8M7-TB-VB is suitable for some power amplifier and **motor drive circuits**, especially in occasions requiring medium current and voltage. Due to its low **RDS(ON)**, it can effectively reduce current loss and provide higher driving efficiency.
In summary, SP8M7-TB-VB is a high-efficiency, low-power bipolar MOSFET, which is widely used in power management, LED drive, battery management, switching power supply and power amplifier and other fields. Its low on-resistance and fast switching characteristics make it excellent in high-efficiency energy conversion and load driving systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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