Product introduction:
# **Product Introduction**
SP8M51-TB-VB is a dual N+P channel MOSFET in SOP8 package with high current carrying capacity and low on-resistance, which is particularly suitable for efficient power management, load switching and power conversion systems. Its maximum drain-source voltage is ±100V, and it can operate stably at currents up to 2.2A (N channel) and -1.9A (P channel). Its on-resistance is 260mΩ (N channel) and 530mΩ (P channel), and at V_GS = 4.5V, the resistance is low, with low power loss and efficient switching performance. SP8M51-TB-VB uses Trench technology and is suitable for low-voltage, high-current switching applications, especially in battery-powered systems, DC-DC converters and load switches.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±100V |
|
±2V |
2.2/-1.9A |
|
|
240/490mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±100V |
|
±2V |
2.2/-1.9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±100V |
|
±2V |
2.2/-1.9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
**Product parameter description**
- **Package type**: SOP8
The SOP8 package is suitable for surface mount (SMT) technology, with high integration and small size, suitable for space-constrained circuit design.
- **Configuration**: Dual N+P channels
This MOSFET is equipped with N-channel and P-channel MOSFETs, suitable for bipolar current flow, suitable for power management and bidirectional current switching scenarios.
- **V_DS (drain-source voltage)**: ±100V
The maximum drain-source voltage is ±100V, making this MOSFET suitable for a wide range of low-voltage applications, capable of withstanding bidirectional currents and controlling higher voltage differences.
- **V_GS (gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, supporting standard gate drive voltages to ensure efficient drive and stable switching of MOSFETs.
- **V_th (gate threshold voltage)**: ±2V
The threshold voltage is ±2V, which allows the MOSFET to start conducting at a lower gate voltage and can cooperate with the control signal more flexibly.
- **R_DS(ON) (on resistance)**:
- **N channel**: 260mΩ (V_GS = 4.5V), 240mΩ (V_GS = 10V)
- **P channel**: 530mΩ (V_GS = 4.5V), 490mΩ (V_GS = 10V)
Low on resistance can significantly reduce power loss and improve power conversion efficiency.
- **I_D (Drain Current)**:
- **N-channel**: 2.2A
- **P-channel**: -1.9A
The maximum current carrying capability enables this MOSFET to carry medium power loads, making it very suitable for switch control and power management applications.
- **Technology Type**: Trench
Using Trench technology, it provides low on-resistance and high switching speed, ensuring efficient current transfer and low power loss.
Domain and module applications:
**Applications and Module Examples**
1. **Battery Management System (BMS)**
The dual N+P channel configuration of the SP8M51-TB-VB is ideal for battery management systems (BMS), especially where bidirectional current flow is required. It can be used in power management applications such as battery charge and discharge control and power switching.
**Example**: In battery management for electric vehicles or renewable energy systems, the SP8M51-TB-VB can be used as a battery charge and discharge switch element to help manage the battery current flow and optimize the charging process.
2. **DC-DC Converter**
The low on-resistance and high current carrying capacity of this MOSFET make it ideal for use in efficient DC-DC converters, which can reduce power loss and improve conversion efficiency.
**Example**: In portable devices, the SP8M51-TB-VB can be used as a switching element in a DC-DC converter to help achieve efficient voltage conversion, extend battery life and improve system performance.
3. **Load switch control**
Due to its low on-resistance and high current carrying capacity, the SP8M51-TB-VB is suitable for load switch applications, which can effectively control the load current and manage the power switch.
**Example**: In a smart home system, the SP8M51-TB-VB can be used as a power switch to control the power of the device on and off, ensuring the high efficiency and reliability of the system.
4. **Efficient power management**
With excellent current control and low power loss characteristics, the SP8M51-TB-VB is very suitable for application scenarios that require efficient power management, such as power distribution, overload protection, and battery charging.
**Example**: In mobile power or wireless communication devices, the SP8M51-TB-VB can be used as a key switch element in the power management module to ensure efficient power conversion and battery management of the system.
5. **Inverter and Photovoltaic Power Generation System**
In solar photovoltaic power generation systems, the efficient switching characteristics of SP8M51-TB-VB make it suitable for inverter power management for DC to AC power conversion.
**Example**: In solar power generation systems, SP8M51-TB-VB can be used as a switching element in the inverter to help convert solar DC power into AC power and improve overall efficiency.
6. **Industrial Automation System**
In industrial automation control systems, the bipolar current switching characteristics of SP8M51-TB-VB make it an ideal choice for load control and power management.
**Example**: In automation equipment, SP8M51-TB-VB can be used in applications such as load switching, motor drive, and sensor power management to improve system flexibility and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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