Product introduction:
SP8M10TB-VB Product Introduction:
**SP8M10TB-VB** is a bipolar MOSFET in **SOP8** package with **dual NP channel** configuration. **VDS** of this product is ±30V, which can support a higher voltage range and is suitable for circuit applications with strict voltage requirements. Its **VGS** operating range is **±20V**, making the device compatible with a variety of drive voltage environments. **Vth** (threshold voltage) is **1.8V** and **-1.7V**, corresponding to N channel and P channel respectively, and can operate at a lower gate voltage with excellent switching performance.
SP8M10TB-VB's **RDS(ON)** is **13mΩ** (N-channel) and **28mΩ** (P-channel) at **VGS = 4.5V**, while at **VGS = 10V**, RDS(ON) is **11mΩ** and **21mΩ**. Low on-resistance can effectively reduce power consumption and heat accumulation. The device has a maximum operating current of **10A** (N-channel) and **-8A** (P-channel), which is suitable for applications such as efficient power management and power conversion.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
|
11/21mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
SP8M10TB-VB Detailed parameter description:
- **Package type**: SOP8
- **Configuration**: Dual NP channel
- **VDS**: ±30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.8V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- **VGS = 4.5V**:
- N channel: 13mΩ
- P channel: 28mΩ
- **VGS = 10V**:
- N channel: 11mΩ
- P channel: 21mΩ
- **Maximum current (ID)**:
- N channel: 10A
- P channel: -8A
- **Technology type**: Trench technology
Domain and module applications:
Application fields and module examples:
1. **Power management module**:
SP8M10TB-VB can be widely used in **DC-DC converter** and **power supply circuit**, especially in situations where high efficiency and low power consumption are required. Due to its low RDS(ON), it can significantly reduce losses and heat under high current conditions, improving the overall efficiency of the power module.
2. **Electric vehicle (EV) drive system**:
In the battery management and drive system of electric vehicles, the bipolar configuration of this MOSFET can provide efficient current switching function to adapt to the high voltage and high current requirements in **motor drives** and **charging systems**, especially its high efficiency conversion in low voltage and high current environments.
3. **LED drive circuit**:
In **LED lighting systems**, SP8M10TB-VB can be used to achieve precise current control and provide reliable switching function. Its **low on-resistance** enables it to effectively reduce heat generation, improve the working stability and life of the LED driver circuit.
4. **Switching Power Supply (SMPS)**:
SP8M10TB-VB is also very suitable for **switching power supply modules (SMPS)**, especially in **AC-DC converters** and **DC-DC converters**. Low RDS(ON) can effectively improve conversion efficiency, reduce heat dissipation, and maintain good performance under high load.
5. **Battery Management System (BMS)**:
SP8M10TB-VB can be used for **battery protection switch** and **battery charge and discharge control** in **battery management system**. The bipolar design of this product enables it to provide stable working performance when handling positive and negative voltages, which is particularly suitable for high-efficiency energy conversion applications.
These applications demonstrate the potential of SP8M10TB-VB in multiple high-efficiency energy management and power systems, especially in situations where low on-resistance and high current carrying capacity are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours