Product introduction:
1. **Product Introduction:**
SP8K67-TB-VB is a dual N-type MOSFET in SOP8 package with a maximum drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, which is suitable for low-voltage switching circuits. The product provides extremely low on-resistance (RDS(ON)), which is 20mΩ (at VGS=4.5V) and 16mΩ (at VGS=10V), respectively, to ensure efficient power transmission. SP8K67-TB-VB uses Trench technology, which gives it excellent switching performance, suitable for high-frequency operation and minimizes power loss. This MOSFET is suitable for a variety of applications that require efficient switching control and low-voltage operation.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
2. **Detailed parameter description:**
- **Model:** SP8K67-TB-VB
- **Package type:** SOP8
- **Configuration:** Dual-N+N-Channel
- **Maximum drain-source voltage (VDS):** 30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 20mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- **Drain current (ID):** 8.5A
- **Maximum power consumption:** 150mW (typical)
- **Maximum junction temperature:** 150°C
- **Operating temperature range:** -55°C to +150°C
- **Technology:** Trench
- **Reverse Recovery Time (tRR):** 30ns (typ.)
Domain and module applications:
3. **Application fields and module examples:**
#### Field 1: **DC-DC converter**
SP8K67-TB-VB is very suitable for use in DC-DC converters, especially in low voltage input applications, due to its low on-resistance and high current capability. In these circuits, MOSFET as a switching element can achieve efficient power conversion and reduce energy loss.
For example, SP8K67-TB-VB can be used in a 5V to 3.3V or 12V to 5V buck converter to provide a stable output voltage while maintaining high conversion efficiency.
#### Field 2: **Battery Management System (BMS)**
In the battery management system, SP8K67-TB-VB can be used for battery charging and discharging control. Its low on-resistance and high current carrying capacity enable it to provide efficient current control, reduce energy loss, and improve the performance and stability of the battery management system.
For example, SP8K67-TB-VB can be used in battery overcharge protection and over-discharge protection circuits to ensure that the battery operates within a safe voltage and current range by regulating the current flow.
#### Field 3: **LED drive circuit**
SP8K67-TB-VB is also suitable for LED drive circuits, especially in situations where efficient current control and low voltage drive are required. Due to its low RDS(ON) and high current carrying capacity, it is suitable for use in the switching power supply part of LED lighting systems to provide stable current and voltage to LED lamps.
For example, in smart home lighting systems, SP8K67-TB-VB can be used as a switching element in LED drive circuits to ensure stable and efficient operation of LED lamps.
#### Field 4: **Electric drive system**
SP8K67-TB-VB is suitable for electric drive systems, especially in applications such as power tools, electric bicycles and electric vehicles. In these systems, MOSFETs act as current switches, effectively controlling the operation of the motor and providing smooth power output.
For example, SP8K67-TB-VB can be used in electric bicycle motor drive circuits to provide precise current regulation to ensure smooth motor startup and efficient operation.
#### Domain 5: **Smart home devices**
In smart home devices, SP8K67-TB-VB can be used as a power management switch to control the on/off state of the device and improve energy efficiency. Its low power consumption and high efficiency make it very suitable for various low-power devices in smart homes.
For example, in smart sockets or smart light controllers, SP8K67-TB-VB can be used as a switching element to adjust the power flow and ensure efficient and stable operation of the device.
#### Domain 6: **Power protection circuit**
SP8K67-TB-VB can be used in power protection circuits, especially in overcurrent protection and short-circuit protection applications. Its high current carrying capacity enables it to quickly cut off the current and protect the circuit from overload damage.
For example, in power adapters and chargers, the SP8K67-TB-VB can be used as a protection switch to disconnect the power supply when overcurrent or short circuit occurs, thereby preventing circuit damage.
### Summary:
The SP8K67-TB-VB is a high-efficiency dual N-type MOSFET suitable for a variety of low-voltage, high-current switching applications. With its low on-resistance, high current carrying capacity and Trench technology, it performs well in DC-DC conversion, battery management, LED drive, electric drive and smart home devices, and is an ideal choice for many modern power management and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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