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SP8K3-TB-VB Product details

Product introduction:

SP8K3-TB-VB Product Introduction

SP8K3-TB-VB is a dual N-channel MOSFET in SOP8 package with 30V withstand voltage and 8.5A maximum drain current. This MOSFET uses Trench technology and has very low on-resistance (R_DS(ON)), which is 20mΩ @ V_GS = 4.5V and 16mΩ @ V_GS = 10V respectively. These features make it very useful in low-voltage, high-efficiency applications, especially in scenarios requiring high switching speeds and low power losses. The 1.7V gate threshold voltage (V_th) of SP8K3-TB-VB ensures that it can start at a lower drive voltage, suitable for high-efficiency power management, load switching and other power electronics applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 30V 1.7V 8.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
SP8K3-TB-VB detailed parameter description

| **Parameter** | **Value** |
|------------------|------------------------|
| **Model** | SP8K3-TB-VB |
| **Package type** | SOP8 |
| **Configuration** | Dual N channel|
| **V_DS** | 30V |
| **V_GS** | ±20V |
| **V_th** | 1.7V |
| **R_DS(ON)** | 20mΩ @ V_GS = 4.5V |
| **R_DS(ON)** | 16mΩ @ V_GS = 10V |
| **I_D** | 8.5A |
| **Technology** | Trench |

- **V_DS (drain-source voltage)**: 30V, suitable for medium and low voltage switching power supply design, able to work stably at low voltage.
- **V_GS (gate-source voltage)**: ±20V, supports standard control voltage, ensuring that MOSFET can switch reliably under common control voltage.
- **V_th (gate threshold voltage)**: 1.7V, suitable for low voltage drive, providing fast switching response.
- **R_DS(ON) (on-resistance)**: 20mΩ @ V_GS = 4.5V and 16mΩ @ V_GS = 10V, ultra-low on-resistance reduces power loss and improves efficiency.
- **I_D (drain current)**: 8.5A, suitable for high current load applications, supporting larger operating current.
- **Technology**: Trench technology, with excellent switching performance and low on-resistance.

Domain and module applications:

Applicable fields and modules

1. **Power Management Systems**
- SP8K3-TB-VB is very suitable for applications in low-voltage power management systems, such as DC-DC converters, power conditioning modules and power switches. Its low on-resistance helps reduce power loss and improve overall system efficiency, and is particularly suitable for mobile devices, battery-driven applications and high-efficiency power systems.

2. **Load Switch and Battery Management**
- In battery management systems, SP8K3-TB-VB can be used as a load switch for batteries to control the battery charging and discharging process. Its low on-resistance allows the battery to effectively reduce power loss during operation, thereby improving the overall energy efficiency and battery life of the system, and is suitable for portable devices and power tools.

3. **LED Driver Power**
- This MOSFET is also suitable for use in LED driver power as an efficient switching element. Due to its ultra-low on-resistance, it can effectively reduce the energy loss in the driving power supply, making the system more efficient, especially suitable for high-power LED lighting and high-efficiency lighting applications.

4. **Power tools and home appliance control systems**
- In power tools and home appliances, SP8K3-TB-VB can be used as a power switch to provide stable power control and can withstand large load currents. Its low R_DS(ON) and high current capability enable it to maintain high-efficiency operation in high-power applications and extend the service life of the equipment.

5. **Communication equipment and signal processing**
- In communication systems, SP8K3-TB-VB can be used as a power management and load switch. Its high efficiency characteristics make it widely used in base stations, wireless communications and other communication equipment, helping to reduce power consumption and improve system stability, supporting long-term continuous operation.

6. **Automotive electronics and electric vehicles**
- In the field of electric vehicles, SP8K3-TB-VB can also be used as a switching element for battery management and power control. Its low power consumption and high current capability can provide efficient power management, ensuring the stability and reliability of electric vehicles in complex environments.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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