SMS318-VB Product details
Product introduction:
**SMS318-VB** is a single-channel **N-Channel** MOSFET with **Trench** technology and **SOT23-3** package. It has low on-resistance and high-efficiency power transmission capability, suitable for low-power applications. The product's **VDS (drain-source voltage)** is **60V**, **VGS (gate-source voltage)** is **±20V**, and at **VGS=10V**, the on-resistance (**RDS(ON)**) is **2800mΩ**. Its low **RDS(ON)** value and high current carrying capacity (maximum **ID** is **0.3A**) make it very suitable for use in efficient power management and low-power electronic systems.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
- **Package**: SOT23-3
- **Configuration**: Single channel N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)** (on-resistance):
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **ID (maximum drain current)**: 0.3A
- **Technology**: Trench
- **Maximum power loss**: Package-related, suitable for low-power applications
- **Operating temperature range**: Suitable for the working environment of conventional electronic equipment
Domain and module applications:
As a low-power N-Channel MOSFET, SMS318-VB is suitable for multiple low-power and high-efficiency power management scenarios. Here are some examples of fields and modules that this product is suitable for:
1. **Portable electronic devices**:
- Applicable to power management systems in smartphones, wearable devices, and portable computing devices. It can efficiently control and regulate current to extend battery life.
2. **Low-power power management**:
- In low-power electronic devices, SMS318-VB can be used to optimize power conversion efficiency, especially in applications that require high switching frequency and low power consumption, such as **DC-DC converters**, **load switches**, **battery management systems (BMS)**.
3. **Communication equipment**:
- In wireless communication devices, such as **Bluetooth modules**, **Wi-Fi devices**, SMS318-VB can be used for power management and signal conditioning to ensure the stability and power efficiency of the device under different working conditions.
4. **Small Power Tools and Appliances**:
- Suitable for power control systems of small appliances and power tools, where low on-resistance helps improve power conversion efficiency and reduce power consumption.
5. **Sensors and Microcontrollers (MCUs)**:
- This MOSFET is suitable for use in power modules of sensors and microcontrollers, helping to achieve efficient power switching and low-noise operation, suitable for precision instruments and control systems.
Through the above applications, **SMS318-VB** can provide excellent performance, especially in low-power, low-current electronic systems, showing extremely high cost-effectiveness and reliability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image