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SMK0160IS-VB Product details
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1. **Product Introduction:**
SMK0160IS-VB is a single N-type MOSFET in TO251 package, designed for high-voltage switching applications. Its maximum drain-source voltage (VDS) is 650V, suitable for power switches in high-voltage power supplies, inverters and power electronic systems. The on-resistance (RDS(ON)) of this MOSFET is 4300mΩ (at VGS=10V), and it can operate stably under high voltage and medium current conditions.
SMK0160IS-VB uses Plannar technology and is suitable for high-voltage environments and applications with high voltage requirements. This MOSFET provides efficient and reliable switching performance in current control, power management and power conversion systems. Its threshold voltage (Vth) is 3.5V, which is compatible with various drive circuits.
SMK0160IS-VB is a single N-type MOSFET in TO251 package, designed for high-voltage switching applications. Its maximum drain-source voltage (VDS) is 650V, suitable for power switches in high-voltage power supplies, inverters and power electronic systems. The on-resistance (RDS(ON)) of this MOSFET is 4300mΩ (at VGS=10V), and it can operate stably under high voltage and medium current conditions.
SMK0160IS-VB uses Plannar technology and is suitable for high-voltage environments and applications with high voltage requirements. This MOSFET provides efficient and reliable switching performance in current control, power management and power conversion systems. Its threshold voltage (Vth) is 3.5V, which is compatible with various drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. **Detailed parameter description:**
- **Model:** SMK0160IS-VB
- **Package type:** TO251
- **Configuration:** Single N-type MOSFET (Single-N-Channel)
- **Maximum drain-source voltage (VDS):** 650V
- **Maximum gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 4300mΩ (at VGS=10V)
- **Drain current (ID):** 2A
- **Maximum power consumption:** 4W (calculated based on on-resistance and leakage current)
- **Maximum junction temperature:** 150°C
- **Technology:** Plannar
- **Operating temperature range:** -55°C To +150°C
- **Gate-Source Threshold Voltage (Vth):** 3.5V
- **Model:** SMK0160IS-VB
- **Package type:** TO251
- **Configuration:** Single N-type MOSFET (Single-N-Channel)
- **Maximum drain-source voltage (VDS):** 650V
- **Maximum gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 4300mΩ (at VGS=10V)
- **Drain current (ID):** 2A
- **Maximum power consumption:** 4W (calculated based on on-resistance and leakage current)
- **Maximum junction temperature:** 150°C
- **Technology:** Plannar
- **Operating temperature range:** -55°C To +150°C
- **Gate-Source Threshold Voltage (Vth):** 3.5V
Domain and module applications：
3. **Application fields and module examples:**
#### Field 1: **High-voltage power supply and inverter**
The high withstand voltage characteristics of SMK0160IS-VB make it particularly suitable for high-voltage power supply design and inverter applications. For example, in the inverter of a solar power generation system, this MOSFET can be used as a high-voltage switching element to control the power conversion of solar panels. The 650V withstand voltage capability ensures that the inverter can still operate stably in the face of voltage fluctuations and provide efficient power conversion.
#### Field 2: **Motor drive system**
In the motor drive system, SMK0160IS-VB can be used as a control switch for medium and high voltage motors. The stability and high withstand voltage of this MOSFET make it excel in high-voltage motor drive applications. For example, in power tools or industrial motor control, SMK0160IS-VB can efficiently handle the starting, stopping and speed regulation of the motor to ensure safe and reliable operation of the system.
#### Field 3: **Power Conversion and Power Management**
SMK0160IS-VB is suitable for power management systems, especially high-voltage power converters. In a switching power supply (SMPS), it acts as the main switching element to help achieve the conversion and regulation of electrical energy. Its on-resistance is moderate, suitable for power applications with medium power requirements. For example, in a power converter or power adapter, this MOSFET can effectively control the output current and voltage of the power supply to ensure stable operation of the power system.
#### Field 4: **Battery Management System (BMS)**
In a battery management system (BMS), SMK0160IS-VB can be used for high-voltage battery charge and discharge control. This MOSFET can withstand a high voltage of 650V and is suitable for electric vehicles or other high-voltage battery systems. It acts as a switching element in the BMS to control the battery's charge and discharge process and ensure that the battery does not exceed the safe voltage and current range during operation.
#### Field Five: **Power Electronics and Grid Equipment**
The high voltage resistance of SMK0160IS-VB makes it widely used in power electronics and grid equipment. Especially in grid-connected equipment, it can handle large voltage fluctuations and ensure the stability of power equipment. This MOSFET can be used as a switching element in power converters to regulate the flow of electric energy in the power system and adapt to different voltage requirements in the power grid.
### Summary:
SMK0160IS-VB is an N-type MOSFET designed for high-voltage applications and is suitable for use in applications with high voltage, current and power requirements. Its maximum drain-source voltage of 650V, stable on-resistance and high temperature operating capability enable it to perform well in power management, motor drive, battery management and power electronics systems.
#### Field 1: **High-voltage power supply and inverter**
The high withstand voltage characteristics of SMK0160IS-VB make it particularly suitable for high-voltage power supply design and inverter applications. For example, in the inverter of a solar power generation system, this MOSFET can be used as a high-voltage switching element to control the power conversion of solar panels. The 650V withstand voltage capability ensures that the inverter can still operate stably in the face of voltage fluctuations and provide efficient power conversion.
#### Field 2: **Motor drive system**
In the motor drive system, SMK0160IS-VB can be used as a control switch for medium and high voltage motors. The stability and high withstand voltage of this MOSFET make it excel in high-voltage motor drive applications. For example, in power tools or industrial motor control, SMK0160IS-VB can efficiently handle the starting, stopping and speed regulation of the motor to ensure safe and reliable operation of the system.
#### Field 3: **Power Conversion and Power Management**
SMK0160IS-VB is suitable for power management systems, especially high-voltage power converters. In a switching power supply (SMPS), it acts as the main switching element to help achieve the conversion and regulation of electrical energy. Its on-resistance is moderate, suitable for power applications with medium power requirements. For example, in a power converter or power adapter, this MOSFET can effectively control the output current and voltage of the power supply to ensure stable operation of the power system.
#### Field 4: **Battery Management System (BMS)**
In a battery management system (BMS), SMK0160IS-VB can be used for high-voltage battery charge and discharge control. This MOSFET can withstand a high voltage of 650V and is suitable for electric vehicles or other high-voltage battery systems. It acts as a switching element in the BMS to control the battery's charge and discharge process and ensure that the battery does not exceed the safe voltage and current range during operation.
#### Field Five: **Power Electronics and Grid Equipment**
The high voltage resistance of SMK0160IS-VB makes it widely used in power electronics and grid equipment. Especially in grid-connected equipment, it can handle large voltage fluctuations and ensure the stability of power equipment. This MOSFET can be used as a switching element in power converters to regulate the flow of electric energy in the power system and adapt to different voltage requirements in the power grid.
### Summary:
SMK0160IS-VB is an N-type MOSFET designed for high-voltage applications and is suitable for use in applications with high voltage, current and power requirements. Its maximum drain-source voltage of 650V, stable on-resistance and high temperature operating capability enable it to perform well in power management, motor drive, battery management and power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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