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SMG2392N-VB Product details
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SMG2392N-VB MOSFET Product Introduction
SMG2392N-VB is a single N-channel MOSFET in SOT23-3 package with high drain-source voltage (V_DS) and moderate current carrying capacity, suitable for small and medium power switching and control applications. The maximum drain-source voltage of this MOSFET is 200V, the maximum gate-source voltage (V_GS) is ±20V, and the threshold voltage (V_th) is 2.5V. At V_GS = 10V, the on-resistance (R_DS(ON)) is 1400mΩ and the maximum leakage current (I_D) is 0.6A. The use of Trench technology optimizes the switching performance, with lower switching losses and higher efficiency. SMG2392N-VB is suitable for applications with medium voltage requirements, especially for efficient low-power power conversion, load switching, and power control in high-voltage and low-current circuits.
SMG2392N-VB is a single N-channel MOSFET in SOT23-3 package with high drain-source voltage (V_DS) and moderate current carrying capacity, suitable for small and medium power switching and control applications. The maximum drain-source voltage of this MOSFET is 200V, the maximum gate-source voltage (V_GS) is ±20V, and the threshold voltage (V_th) is 2.5V. At V_GS = 10V, the on-resistance (R_DS(ON)) is 1400mΩ and the maximum leakage current (I_D) is 0.6A. The use of Trench technology optimizes the switching performance, with lower switching losses and higher efficiency. SMG2392N-VB is suitable for applications with medium voltage requirements, especially for efficient low-power power conversion, load switching, and power control in high-voltage and low-current circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 2.5V | 0.6A | 1400mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 2.5V | 0.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 2.5V | 0.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
SMG2392N-VB MOSFET detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 200V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**: 1400mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 0.6A
- **Technology**: Trench
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 200V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**: 1400mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 0.6A
- **Technology**: Trench
Domain and module applications：
Applications and module examples: 1. Low-power DC-DC converters: SMG2392N-VB is widely used in DC-DC converters, especially for medium and small power applications that require high withstand voltage. Due to its high drain-source voltage (200V), it can be used in applications that convert higher voltages to low voltages. In such converters, MOSFET, as a switching element, can effectively reduce switching losses and improve conversion efficiency, and is suitable for power management systems of small power adapters, battery-powered devices, and some communication equipment. 2. Load switch and power management system: This MOSFET is suitable for use as a low-power load switch to implement power switching functions in battery-powered devices. Its low threshold voltage and low gate-source voltage are suitable for use as switch control, especially in medium and low current power management modules. It can be used in portable devices, battery management systems (BMS), etc. to help improve system efficiency and safety.
3. **High-voltage and low-current applications**:
The maximum drain-source voltage of SMG2392N-VB is 200V, which is suitable for some high-voltage and low-current application scenarios. It can provide stable current control in high-voltage environments, especially for low-power electrical systems such as small motor drives and LED drives. Its stable switching performance and low on-resistance make it perform well in these fields.
4. **Battery charging and protection circuit**:
This MOSFET can also be used in battery charging and protection circuits as part of the battery charging management system to control the battery charging process. SMG2392N-VB has good conduction performance, can provide stable current output, and has a high voltage carrying capacity, which is suitable for applications in high-voltage charging systems.
5. **Sensor and actuator control**:
In automation control and IoT devices, SMG2392N-VB can be used for sensor and actuator control, especially in small electrical systems that require stable power control. For example, in smart home, automotive electronics and industrial automation control systems, it can effectively control low-power actuators or sensor modules and provide reliable switching operations.
6. **Small motor drive**:
SMG2392N-VB can be used in small motor drive systems, especially for motor control with medium voltage requirements. It can effectively control current and reduce switching losses, especially suitable for drive systems of small household appliances, mobile devices and power tools.
3. **High-voltage and low-current applications**:
The maximum drain-source voltage of SMG2392N-VB is 200V, which is suitable for some high-voltage and low-current application scenarios. It can provide stable current control in high-voltage environments, especially for low-power electrical systems such as small motor drives and LED drives. Its stable switching performance and low on-resistance make it perform well in these fields.
4. **Battery charging and protection circuit**:
This MOSFET can also be used in battery charging and protection circuits as part of the battery charging management system to control the battery charging process. SMG2392N-VB has good conduction performance, can provide stable current output, and has a high voltage carrying capacity, which is suitable for applications in high-voltage charging systems.
5. **Sensor and actuator control**:
In automation control and IoT devices, SMG2392N-VB can be used for sensor and actuator control, especially in small electrical systems that require stable power control. For example, in smart home, automotive electronics and industrial automation control systems, it can effectively control low-power actuators or sensor modules and provide reliable switching operations.
6. **Small motor drive**:
SMG2392N-VB can be used in small motor drive systems, especially for motor control with medium voltage requirements. It can effectively control current and reduce switching losses, especially suitable for drive systems of small household appliances, mobile devices and power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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