Product introduction：
SMG2345P-VB MOSFET Product Introduction
SMG2345P-VB is a single P-channel MOSFET in SOT23-3 package with a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of -5.6A. The threshold voltage (Vth) of this MOSFET is -1.7V, and the gate-source voltage (VGS) can reach ±20V. The on-resistance (RDS(ON)) of SMG2345P-VB is 54mΩ at VGS=4.5V and 46mΩ at VGS=10V, showing low conduction loss, suitable for high-efficiency power supply and load switching applications. It is manufactured using Trench technology, has excellent switching characteristics and high efficiency, and performs well in circuits requiring low power consumption, long life and high reliability.
Due to its small SOT23-3 package, the SMG2345P-VB is ideal for space-constrained designs, especially in power management solutions that require high performance and low power consumption, such as portable electronic devices, power adapters, and battery protection systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
|
46mΩ |
|
SMG2345P-VB MOSFET parameter description
| **Parameter** | **Value** |
|-----------------------------------|-------------------------|
| **Package** | SOT23-3 |
| **Configuration** | Single P-Channel |
| **Drain-Source Voltage (VDS)** | -30V |
| **Gate-Source Voltage (VGS)** | ±20V |
| **Threshold Voltage (Vth)** | -1.7V |
| **On-Resistance (RDS(ON))@VGS=10V** | 46mΩ |
| **On-Resistance (RDS(ON))@VGS=4.5V** | 54mΩ |
| **Maximum Drain Current (ID)** | -5.6A |
| **Technology** | Trench |
Domain and module applications：
Applicable fields and modules
1. **Battery protection and power management**
SMG2345P-VB is very suitable for providing efficient power management in portable electronic devices, power tools and other battery-powered applications. Its low on-resistance (RDS(ON) is 46mΩ@VGS=10V) can help improve battery efficiency, reduce battery power loss and extend battery life. It is often used in battery management systems (BMS) as a battery protection switch to prevent over-discharge, over-charge or over-current.
2. **Load switch**
As a load switch, SMG2345P-VB provides efficient current switching function. In current switching applications, P-channel MOSFET is particularly suitable for start-stop control of high current loads. It can provide high efficiency and low power consumption in load switching, especially for applications that require frequent switching operations.
3. **High-efficiency power modules**
SMG2345P-VB is widely used in power adapters, DC-DC converters and other power management modules. Its low on-resistance and high current carrying capacity enable it to effectively reduce energy loss in power conversion, improve power conversion efficiency and reduce power consumption.
4. **Consumer electronics devices**
The small package and high efficiency of SMG2345P-VB make it particularly suitable for use in space-constrained consumer electronics products, such as power modules for smartphones, tablets, smart watches and other devices. It can play an important role in battery management and power control of these devices to ensure stable operation of the devices.
5. **Automotive electronics**
In the field of automotive electronics, SMG2345P-VB can be used in applications such as automotive battery management systems, battery protection modules, car power adapters and load control. The design of the P-channel MOSFET enables it to effectively manage and control the current flow inside the car, improving the stability and efficiency of the power system.
6. **Industrial Control and Automation**
SMG2345P-VB is also used in industrial control systems, especially in load control and power regulation modules. Its efficient current switching capability enables it to provide excellent current control and power management in automation equipment, motor drives, and industrial power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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