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SM8007NSU-VB Product details
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SM8007NSU-VB MOSFET Product Introduction
The SM8007NSU-VB is a single N-channel MOSFET in a TO252 package, designed for efficient power management applications. It has a maximum drain-source voltage (V_DS) of up to 80V, a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 3V. The on-resistance (R_DS(ON)) of this MOSFET is very low, 5mΩ at V_GS = 10V, ensuring low power consumption and efficient current transfer capability, and its maximum drain current (I_D) can reach 75A, suitable for high current applications. The SM8007NSU-VB uses Trench technology to provide lower conduction losses and higher switching speeds, and is particularly suitable for high-efficiency power systems, drive circuits, and applications requiring high current and low resistance.
The SM8007NSU-VB is a single N-channel MOSFET in a TO252 package, designed for efficient power management applications. It has a maximum drain-source voltage (V_DS) of up to 80V, a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 3V. The on-resistance (R_DS(ON)) of this MOSFET is very low, 5mΩ at V_GS = 10V, ensuring low power consumption and efficient current transfer capability, and its maximum drain current (I_D) can reach 75A, suitable for high current applications. The SM8007NSU-VB uses Trench technology to provide lower conduction losses and higher switching speeds, and is particularly suitable for high-efficiency power systems, drive circuits, and applications requiring high current and low resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SM8007NSU-VB MOSFET detailed parameter description
- **Package**: TO252
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 80V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 75A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N channel
- **Maximum drain-source voltage (V_DS)**: 80V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **DC-DC converter**:
SM8007NSU-VB MOSFET is ideal for DC-DC converters (such as buck, boost converters). Due to its ultra-low on-resistance and high current carrying capacity, it can significantly reduce power losses and improve power efficiency. This makes it an indispensable component in high-efficiency power management systems, especially for power conversion in battery-powered devices or mobile devices.
2. **Motor drive system**:
SM8007NSU-VB MOSFET is suitable for various motor drive systems, especially motor control in power tools, electric bicycles, drones and other equipment. Its high current carrying capacity (maximum 75A) enables it to work stably under high load conditions, and its low R_DS(ON) enables it to have lower energy loss and heat generation in motor drives.
3. **Battery Management System (BMS)**:
In the battery management system (BMS), SM8007NSU-VB can be used for efficient power switching and battery protection. Its low on-resistance and high current capability enable it to handle high currents and effectively control the battery charging and discharging process, ensuring that the battery operates within a safe range and preventing overvoltage and overcurrent.
4. **Power Amplifier and RF Amplifier**:
SM8007NSU-VB is also widely used in RF amplifier (RF) and power amplifier applications. Its fast switching characteristics and low on-resistance make it suitable for efficient power amplification and signal processing, providing higher power output and lower energy loss, especially in wireless communication equipment.
5. **Automotive Electronic Systems**:
In the automotive electronics field, SM8007NSU-VB MOSFET can be used in electric power steering (EPS), power window control systems, battery management systems, and electric vehicle (EV) charging systems. Due to its high current carrying capacity and low power loss characteristics, it can provide efficient power conversion and control, ensure the stable operation of the system under high voltage and high current conditions, and improve the performance and safety of automotive electronic equipment.
These applications show that the SM8007NSU-VB MOSFET is an ideal choice for high current, high efficiency applications, especially in power management, electric drive, battery management and automotive electronics, and can provide excellent energy efficiency and system reliability.
1. **DC-DC converter**:
SM8007NSU-VB MOSFET is ideal for DC-DC converters (such as buck, boost converters). Due to its ultra-low on-resistance and high current carrying capacity, it can significantly reduce power losses and improve power efficiency. This makes it an indispensable component in high-efficiency power management systems, especially for power conversion in battery-powered devices or mobile devices.
2. **Motor drive system**:
SM8007NSU-VB MOSFET is suitable for various motor drive systems, especially motor control in power tools, electric bicycles, drones and other equipment. Its high current carrying capacity (maximum 75A) enables it to work stably under high load conditions, and its low R_DS(ON) enables it to have lower energy loss and heat generation in motor drives.
3. **Battery Management System (BMS)**:
In the battery management system (BMS), SM8007NSU-VB can be used for efficient power switching and battery protection. Its low on-resistance and high current capability enable it to handle high currents and effectively control the battery charging and discharging process, ensuring that the battery operates within a safe range and preventing overvoltage and overcurrent.
4. **Power Amplifier and RF Amplifier**:
SM8007NSU-VB is also widely used in RF amplifier (RF) and power amplifier applications. Its fast switching characteristics and low on-resistance make it suitable for efficient power amplification and signal processing, providing higher power output and lower energy loss, especially in wireless communication equipment.
5. **Automotive Electronic Systems**:
In the automotive electronics field, SM8007NSU-VB MOSFET can be used in electric power steering (EPS), power window control systems, battery management systems, and electric vehicle (EV) charging systems. Due to its high current carrying capacity and low power loss characteristics, it can provide efficient power conversion and control, ensure the stable operation of the system under high voltage and high current conditions, and improve the performance and safety of automotive electronic equipment.
These applications show that the SM8007NSU-VB MOSFET is an ideal choice for high current, high efficiency applications, especially in power management, electric drive, battery management and automotive electronics, and can provide excellent energy efficiency and system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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