Product introduction：
SM7340EHKP-VB Product Introduction
SM7340EHKP-VB is a high-performance half-bridge N+N channel MOSFET, which adopts DFN8(5X6)-C package and is widely used in high-efficiency power electronic applications such as power management and power conversion. It has low on-resistance and high current carrying capacity, which is particularly suitable for systems requiring high efficiency and high density design. The drain-source voltage (VDS) of this model is 30V, and the gate-source voltage (VGS) is up to ±20V, which is suitable for low to medium voltage application scenarios.
SM7340EHKP-VB has a threshold voltage (Vth) of 1.7V, which means that the MOSFET can be turned on at a lower gate voltage, providing good switching performance. Its on-resistance (RDS(ON)) is 3.4mΩ at VGS=10V and 4mΩ at VGS=4.5V, which makes the MOSFET have very low power loss in high current applications, thereby improving the overall efficiency of the system. Its maximum leakage current (ID) is 60A, which can meet the switching needs of loads with high current requirements.
Using Trench technology, SM7340EHKP-VB has excellent performance in switching characteristics, conduction performance and thermal management, and is particularly suitable for applications that require high power density and low energy consumption, such as power switches, load switching, and battery management systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
|
3.4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
SM7340EHKP-VB Detailed parameter description
- **Model**: SM7340EHKP-VB
- **Package type**: DFN8(5X6)-C
- **Configuration**: Half-Bridge N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 3.4mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 60A
- **Technology**: Trench technology
- **Package type**: DFN8(5X6)-C
Domain and module applications：
Application fields and module examples
SM7340EHKP-VB is very valuable in multiple high-efficiency power management and power conversion applications due to its low on-resistance and high current carrying capacity. The following are the main application fields and modules of this MOSFET:
1. **Power converter and DC-DC converter**:
SM7340EHKP-VB can be used as an efficient switching element in power converters (especially DC-DC converters). Due to its low on-resistance (3.4mΩ @ VGS=10V), this MOSFET can reduce power losses under high current conditions and improve the overall efficiency of the system. It is particularly suitable for power supply designs that require high power density and small size.
2. **Electric drive system**:
In the electric drive system, SM7340EHKP-VB acts as a half-bridge switching element to control the current flow in the motor drive circuit. Its high current carrying capacity (60A) and low on-resistance make it an ideal choice for high-efficiency conversion in motor control systems.
3. **Battery Management System (BMS)**:
In the battery management system (BMS), the SM7340EHKP-VB can be used to control battery charging and discharging, especially in high-efficiency battery charging and protection circuits. Its low on-resistance makes it suitable for high-power charging systems, ensuring efficient charging and low temperature rise.
4. **Power Tools and Battery Drive Systems**:
The SM7340EHKP-VB is also suitable for power tools, battery drive systems and other fields. Due to its ability to withstand high current (60A) and provide low power loss, it can provide smooth and reliable current switching in high-efficiency battery drive circuits to ensure continuous operation of the tools.
5. **Automotive Power Electronics System**:
In automotive power electronics systems, the SM7340EHKP-VB can be used in applications such as battery management, inverters, and electric drive control. Especially in the power transmission system of electric vehicles (EV) and hybrid electric vehicles (HEV), this MOSFET can support efficient power conversion and load switching, and provide high-current stable output.
6. **High-efficiency battery charger**:
In high-efficiency battery chargers, the SM7340EHKP-VB can be used for high-current battery charging control. Its low on-resistance and high current carrying capacity enable it to perform well in fast charging and high-power battery management systems, which can effectively improve charging efficiency and reduce heat loss.
7. **UPS (Uninterruptible Power Supply) System**:
The SM7340EHKP-VB can be used as a switching element in UPS systems, especially in medium and low-power UPS systems. Its high current carrying capacity and low on-resistance can ensure smooth switching between batteries and mains power, reduce heat generation, and improve the stability and efficiency of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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