Product introduction：
Product Introduction
**SM7305ESKP-VB** is a half-bridge N+N channel MOSFET in **DFN8 (5x6)-C** package, suitable for low voltage and high efficiency power management applications. The drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) is ±20V, and the maximum drain current (ID) is 60A. It adopts **Trench** technology, has extremely low on-resistance (RDS(ON)), and provides efficient current switching capability. Its on-resistance is 4mΩ at VGS = 4.5V and 3.4mΩ at VGS = 10V. It has excellent conductivity and low power loss, and is suitable for various efficient power conversion and switching circuits. This MOSFET is mainly used in drive circuits, power management modules and battery management systems, and is particularly suitable for applications requiring high switching speeds and high current carrying capacity.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
|
3.4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN8 (5x6)-C
- **Configuration**: Half-bridge N+N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- At VGS = 4.5V: 4mΩ
- At VGS = 10V: 3.4mΩ
- **Drain current (ID)**: 60A
- **Technology**: Trench technology
- **Maximum power dissipation**: Depends on actual working conditions
- **Switching speed**: Suitable for medium and high frequency switching applications
- **Operating temperature range**: -40°C to +125°C
- **Switching characteristics**: Suitable for high frequency operation, low conduction loss
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**
SM7305ESKP-VB is suitable for high-efficiency DC-DC converters. In these applications, due to its extremely low on-resistance (3.4mΩ @VGS = 10V), it can significantly reduce power losses and improve overall efficiency. As a switching element, this MOSFET provides fast switching response and stable current control during voltage conversion, especially suitable for battery-powered systems, power adapters and portable devices.
2. **Motor drive system**
SM7305ESKP-VB can also be used in motor drive systems, especially in motor control applications that require high efficiency and low power loss. Due to its high current carrying capacity (60A) and low on-resistance, it can ensure stable operation of motor drives under higher loads. In motor drive systems such as smart home devices, power tools and electric vehicles, SM7305ESKP-VB provides reliable switching performance and low heat generation.
3. **Battery Management System (BMS)**
In the battery management system, the SM7305ESKP-VB can be used for efficient battery charge and discharge control. Due to its low on-resistance, it can effectively manage large current flows and reduce energy losses. In applications such as electric vehicles (EVs) and energy storage systems, the SM7305ESKP-VB helps improve charge and discharge efficiency and ensure long battery life.
4. **Power Factor Correction (PFC) Circuit**
The SM7305ESKP-VB is suitable for power factor correction (PFC) circuits, where it can optimize power transmission and improve system efficiency as an efficient switching element. Especially in power supply, data center power supply, and home appliance power supply systems, it can reduce reactive power and improve system energy efficiency.
5. **LED Drive Circuit**
In the LED drive circuit, the SM7305ESKP-VB can be used as an efficient power switch. Due to its high switching frequency and low on-resistance, it can provide stable current control, ensure stable brightness of LED lamps and extend their service life. This MOSFET is particularly suitable for high-power LED lighting systems, such as industrial lighting and commercial lighting.
6. **High-efficiency power management module**
Due to its excellent conduction performance and high current carrying capacity, SM7305ESKP-VB is very suitable for high-efficiency power management modules, especially those applications that require high switching speeds and lower power losses. It can help improve the efficiency of the entire power system and is widely used in power adapters, communication equipment power supplies and industrial power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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