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SM6A25NSUB-VB Product details
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SM6A25NSUB-VB MOSFET detailed product information
**Product Introduction**
SM6A25NSUB-VB is an N-channel MOSFET using SJ_Multi-EPI technology, with a high drain-source voltage (V_DS) of 600V and a drain current (I_D) of 11A. It is suitable for medium and high voltage power management, switching power supplies and power electronics systems. The MOSFET is packaged in TO251 and has good heat dissipation performance, suitable for high-efficiency power conversion applications. Its low R_DS(ON) value (380mΩ @ V_GS = 10V) can effectively reduce conduction losses, improve overall system efficiency, and has good high temperature stability. It is suitable for circuit design with high frequency switching and low power loss, and can meet the needs of a variety of industrial, automotive and consumer electronics products.
**Product
**Product Introduction**
SM6A25NSUB-VB is an N-channel MOSFET using SJ_Multi-EPI technology, with a high drain-source voltage (V_DS) of 600V and a drain current (I_D) of 11A. It is suitable for medium and high voltage power management, switching power supplies and power electronics systems. The MOSFET is packaged in TO251 and has good heat dissipation performance, suitable for high-efficiency power conversion applications. Its low R_DS(ON) value (380mΩ @ V_GS = 10V) can effectively reduce conduction losses, improve overall system efficiency, and has good high temperature stability. It is suitable for circuit design with high frequency switching and low power loss, and can meet the needs of a variety of industrial, automotive and consumer electronics products.
**Product
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
**
- **Package type**: TO251 package, suitable for compact designs, with good heat dissipation performance, suitable for applications with package size requirements in various electronic systems.
- **Configuration**: Single N-channel MOSFET, providing forward drive mode, commonly used in high-efficiency switching power supplies, inverters, motor drives and load control circuits.
- **V_DS (drain-source voltage)**: 600V, suitable for high-voltage applications such as switching power supplies, inverters and industrial power systems, and can withstand 600V high-voltage operating environments.
- **V_GS (gate-source voltage)**: ±30V, providing a flexible gate drive voltage range to adapt to different control circuits and drive requirements.
- **V_th (gate threshold voltage)**: 3.5V, when the gate voltage is 3.5V, the MOSFET starts to turn on, suitable for low-voltage drive.
- **R_DS(ON) (on-resistance)**:
- 380mΩ @ V_GS = 10V
This on-resistance value is relatively low, which can effectively reduce conduction loss and improve power conversion efficiency, and is suitable for medium and high current applications.
- **I_D (drain current)**: 11A, suitable for medium power loads, can stably provide 11A current, suitable for most high voltage and high-efficiency systems.
- **Technology type**: SJ_Multi-EPI technology, through the use of multi-layer epitaxial structure, reduces leakage current, increases switching speed, and enhances system stability and reliability.
- **Package type**: TO251 package, suitable for compact designs, with good heat dissipation performance, suitable for applications with package size requirements in various electronic systems.
- **Configuration**: Single N-channel MOSFET, providing forward drive mode, commonly used in high-efficiency switching power supplies, inverters, motor drives and load control circuits.
- **V_DS (drain-source voltage)**: 600V, suitable for high-voltage applications such as switching power supplies, inverters and industrial power systems, and can withstand 600V high-voltage operating environments.
- **V_GS (gate-source voltage)**: ±30V, providing a flexible gate drive voltage range to adapt to different control circuits and drive requirements.
- **V_th (gate threshold voltage)**: 3.5V, when the gate voltage is 3.5V, the MOSFET starts to turn on, suitable for low-voltage drive.
- **R_DS(ON) (on-resistance)**:
- 380mΩ @ V_GS = 10V
This on-resistance value is relatively low, which can effectively reduce conduction loss and improve power conversion efficiency, and is suitable for medium and high current applications.
- **I_D (drain current)**: 11A, suitable for medium power loads, can stably provide 11A current, suitable for most high voltage and high-efficiency systems.
- **Technology type**: SJ_Multi-EPI technology, through the use of multi-layer epitaxial structure, reduces leakage current, increases switching speed, and enhances system stability and reliability.
Domain and module applications：
1. **Switching Mode Power Supply (SMPS)**
SM6A25NSUB-VB is suitable for high voltage switching mode power supply (SMPS) design, especially in power modules that require high efficiency and low conduction loss. Low R_DS(ON) can effectively reduce energy loss in the power supply and improve system performance.
**Example**: In a 600V high efficiency DC-DC converter, SM6A25NSUB-VB can be used as the main switching element to ensure low loss during power conversion and maintain high efficiency at high current output to reduce temperature rise.
2. **Photovoltaic Inverter**
This MOSFET can be used in solar photovoltaic inverters to help achieve efficient DC to AC conversion. The high voltage withstand capability of SM6A25NSUB-VB makes it particularly suitable for photovoltaic power generation systems that require high voltage operation and can provide stable power output in harsh environments.
**Example**: In a photovoltaic inverter, the SM6A25NSUB-VB can be used as a switching element to convert the DC power generated by the solar array into AC power, optimizing energy conversion efficiency and reducing power loss.
3. **Motor drive and power tools**
The SM6A25NSUB-VB is suitable for applications such as power tools, electric vehicles and industrial motor drives. Its low R_DS(ON) makes it very suitable for high-frequency switching to control motors and effectively reduce heat loss.
**Example**: In the drive circuit of a power tool, the SM6A25NSUB-VB can be used as a power switch to control the start and stop of the motor. Through efficient switching control, heat generation is reduced and work efficiency is improved.
4. **Battery Management System (BMS)**
In the battery management system (BMS), SM6A25NSUB-VB is suitable for controlling the battery charging and discharging process, especially in high-voltage battery packs, and can provide efficient current control and stable working performance.
**Example**: In the battery management system (BMS) of electric vehicles, SM6A25NSUB-VB can be used as a battery charge and discharge control switch to ensure that the high-voltage battery pack is efficiently charged and discharged within a safe range and prolong the battery life.
5. **Power Electronics System**
SM6A25NSUB-VB can be widely used in industrial power electronics systems such as power transmission, power regulation and power conversion. Due to its high voltage resistance and low on-resistance, it can provide stable working performance under various high voltage and high current loads.
**Example**: In industrial power control systems, SM6A25NSUB-VB can be used as a switching element to regulate the flow of power, ensure minimal loss during power transmission, and ensure efficient and stable operation of the system.
6. **Automotive Electronic Systems**
SM6A25NSUB-VB is also widely used in automotive electronic systems, especially in high-voltage battery systems, power conversion modules, and electric drive systems. It can provide efficient current control and reduce power losses in the system.
**Example**: In the power control system of electric vehicles, SM6A25NSUB-VB can be used as a power switch to regulate the current flow between the battery and the motor to improve the efficiency of the overall drive system.
Through these application cases, SM6A25NSUB-VB demonstrates its applicability in multiple fields such as high-voltage power management, power tools, power electronic systems, and battery management. Its excellent electrical performance, reliability, and low on-resistance make it an indispensable key component in high-efficiency, high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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