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SM6129NSU-VB Product details
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SM6129NSU-VB Product Introduction
SM6129NSU-VB is a high-efficiency single N-channel MOSFET in TO252 package, suitable for various high-efficiency power management and switching applications. It has a drain-source voltage (VDS) of 60V and a maximum gate-source voltage of ±20V. The threshold voltage of this MOSFET is 2.5V, and it can be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 13mΩ at VGS=4.5V and 10mΩ at VGS=10V, showing its low conduction loss characteristics, especially suitable for medium and high power applications. The maximum leakage current is 58A, and Trench technology is used to provide higher current carrying capacity and lower switching losses, suitable for systems requiring high reliability and efficiency.
SM6129NSU-VB is a high-efficiency single N-channel MOSFET in TO252 package, suitable for various high-efficiency power management and switching applications. It has a drain-source voltage (VDS) of 60V and a maximum gate-source voltage of ±20V. The threshold voltage of this MOSFET is 2.5V, and it can be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 13mΩ at VGS=4.5V and 10mΩ at VGS=10V, showing its low conduction loss characteristics, especially suitable for medium and high power applications. The maximum leakage current is 58A, and Trench technology is used to provide higher current carrying capacity and lower switching losses, suitable for systems requiring high reliability and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SM6129NSU-VB Detailed parameter description
- **Model**: SM6129NSU-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- When VGS = 4.5V: 13mΩ
- When VGS = 10V: 10mΩ
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench technology
- **Package type**: TO252
- **Model**: SM6129NSU-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- When VGS = 4.5V: 13mΩ
- When VGS = 10V: 10mΩ
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench technology
- **Package type**: TO252
Domain and module applications：
Application fields and module examples
The high current carrying capacity and low RDS(ON) characteristics of SM6129NSU-VB MOSFET make it suitable for a variety of fields and modules. The following are several major application scenarios:
1. **DC-DC converter**:
This MOSFET is widely used in DC-DC converters, especially in power supply designs at low and medium power levels. Its low on-resistance ensures high-efficiency power conversion, reduces energy loss, and improves overall efficiency. It is suitable for use in consumer electronics, battery management systems and other fields.
2. **Power tools and home appliances**:
In the motor drive system of power tools and home appliances (such as vacuum cleaners, fans, washing machines), SM6129NSU-VB is used as a switching element, capable of carrying up to 58A of current, providing smooth power transmission, while maintaining low power consumption and high efficiency, reducing heat generation, and improving product reliability and life.
3. **Onboard Power Management System**:
This MOSFET is suitable for automotive power management systems, especially in onboard chargers, inverters and battery protection modules. Due to its ability to handle higher currents and low RDS(ON), it can significantly improve the efficiency of onboard power systems, reduce battery consumption, and increase the range of electric and hybrid vehicles.
4. **Battery Management and Energy Storage System**:
SM6129NSU-VB is widely used in battery management systems (BMS) and energy storage systems. Through its high conductivity and low loss characteristics, this MOSFET helps to improve the charging and discharging efficiency of the battery, especially in energy storage systems, it can increase the output power of the battery and ensure stable and efficient energy storage and release.
5. **High-frequency Switching Power Supply (SMPS)**:
In the switching power supply (SMPS), the SM6129NSU-VB MOSFET can be used as a switching device for high-efficiency power supply design. It is particularly suitable for high-power power supply applications, such as server power supply, communication base station power supply, etc., providing higher conversion efficiency and lower loss, and can reduce the power consumption and heat loss of the system.
6. **Electric drive system**:
In industrial electric drive systems, SM6129NSU-VB MOSFET is used as a power switch to drive the motor. Its high current carrying capacity and low RDS(ON) characteristics give it significant advantages in high-load applications such as motor starting and variable speed control.
These applications show that SM6129NSU-VB has a wide range of applicability in fields that require low on-resistance, high current carrying capacity and high efficiency, and is an ideal choice for many modern power electronic systems.
The high current carrying capacity and low RDS(ON) characteristics of SM6129NSU-VB MOSFET make it suitable for a variety of fields and modules. The following are several major application scenarios:
1. **DC-DC converter**:
This MOSFET is widely used in DC-DC converters, especially in power supply designs at low and medium power levels. Its low on-resistance ensures high-efficiency power conversion, reduces energy loss, and improves overall efficiency. It is suitable for use in consumer electronics, battery management systems and other fields.
2. **Power tools and home appliances**:
In the motor drive system of power tools and home appliances (such as vacuum cleaners, fans, washing machines), SM6129NSU-VB is used as a switching element, capable of carrying up to 58A of current, providing smooth power transmission, while maintaining low power consumption and high efficiency, reducing heat generation, and improving product reliability and life.
3. **Onboard Power Management System**:
This MOSFET is suitable for automotive power management systems, especially in onboard chargers, inverters and battery protection modules. Due to its ability to handle higher currents and low RDS(ON), it can significantly improve the efficiency of onboard power systems, reduce battery consumption, and increase the range of electric and hybrid vehicles.
4. **Battery Management and Energy Storage System**:
SM6129NSU-VB is widely used in battery management systems (BMS) and energy storage systems. Through its high conductivity and low loss characteristics, this MOSFET helps to improve the charging and discharging efficiency of the battery, especially in energy storage systems, it can increase the output power of the battery and ensure stable and efficient energy storage and release.
5. **High-frequency Switching Power Supply (SMPS)**:
In the switching power supply (SMPS), the SM6129NSU-VB MOSFET can be used as a switching device for high-efficiency power supply design. It is particularly suitable for high-power power supply applications, such as server power supply, communication base station power supply, etc., providing higher conversion efficiency and lower loss, and can reduce the power consumption and heat loss of the system.
6. **Electric drive system**:
In industrial electric drive systems, SM6129NSU-VB MOSFET is used as a power switch to drive the motor. Its high current carrying capacity and low RDS(ON) characteristics give it significant advantages in high-load applications such as motor starting and variable speed control.
These applications show that SM6129NSU-VB has a wide range of applicability in fields that require low on-resistance, high current carrying capacity and high efficiency, and is an ideal choice for many modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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