Product introduction:
Product Introduction
**SM6128NSK-VB** is a high-performance single N-type MOSFET in SOP8 package, designed for high voltage, low on-resistance and high current applications. With a drain-source voltage (V_DS) of 60V and a maximum drain current (I_D) of 12A, this MOSFET is suitable for circuits that require higher voltage and current carrying capacity. Its R_DS(ON) is 15mΩ at V_GS=4.5V and 12mΩ at V_GS=10V, indicating that the product has very low conduction losses and can significantly improve circuit efficiency.
This MOSFET uses Trench technology, has low switching losses and excellent conductive properties, and is widely used in power management, load switching, signal conditioning and other fields. Due to its SOP8 package, the product can provide high performance even in space-constrained applications and is suitable for high-density circuit design.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
60V |
|
1.7V |
12A |
|
|
12mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
60V |
|
1.7V |
12A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
60V |
|
1.7V |
12A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 15mΩ @ V_GS=4.5V
- 12mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 12A
- **Technology**: Trench technology (low on-resistance and low switching loss)
Domain and module applications:
Application areas and module examples
1. **Power management system**: SM6128NSK-VB is widely used in power management applications such as DC-DC converters and power adapters. Due to its low on-resistance (R_DS(ON)) and high current carrying capacity, it can maintain low power consumption under high efficiency and high load conditions. In voltage regulators, buck converters, and boost converters, SM6128NSK-VB can significantly improve energy efficiency and reduce heat.
2. **Load switch and battery management system (BMS)**: In the battery management system, SM6128NSK-VB can effectively control the charging and discharging process of the battery to prevent overcurrent and overvoltage. Its low on-resistance can reduce power loss and improve the efficiency of battery management, especially in the battery management of mobile devices and electric vehicles (EV).
3. **Power Tools and Appliance Control**: In power tools, smart home devices and other fields, the SM6128NSK-VB can be used in modules such as motor control and switching power supplies. The low on-resistance and high maximum drain current make it excel in motor drive circuits that need to withstand large currents.
4. **Communications and Signal Conditioning**: This MOSFET also has applications in signal amplification and conditioning circuits. For example, it can be used as a switching element to switch and condition signals in communication equipment. Due to its high switching frequency characteristics, it is able to maintain good performance in high-speed circuits.
5. **Automotive Electronics**: The SM6128NSK-VB also has a wide range of applications in the automotive electronics field, including power management, load switching, battery management, and other high-power applications. The low on-resistance and high current capability make it ideal for battery management systems and power control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
In summary, SM6128NSK-VB is widely used in power management, battery management, power tools, electric vehicles and other high-efficiency and high-power fields due to its excellent conduction performance, low on-resistance and high current carrying capacity. It is an ideal choice in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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