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SM6056NSU-VB Product details

Product introduction:

1. Product Introduction

**SM6056NSU-VB** is an N-Channel MOSFET with excellent performance. It adopts TO252 package and is designed for high-efficiency switching applications. It is suitable for circuits with medium power requirements. This MOSFET is equipped with advanced Trench technology, which can effectively reduce the on-resistance (R_DS(ON)), improve efficiency and reduce energy consumption. Its maximum V_DS withstand voltage is 60V, which can withstand higher voltage environments and has a lower on-resistance. It is suitable for applications requiring high current density, such as power management, motor drive, DC-DC converters, etc. Its low R_DS(ON) can reduce switching losses and improve the overall efficiency of the system.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 1.7V 18A 73mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single N-Channel
- **V_DS(Drain-Source Voltage)**: 60V
- **V_GS(Gate-Source Voltage)**: ±20V
- **V_th(Throw-On Voltage)**: 1.7V
- **R_DS(ON)(On-Resistance)**:
- 85mΩ @ V_GS = 4.5V
- 73mΩ @ V_GS = 10V
- **I_D(Drain Current)**: 18A
- **Technology**: Trench technology, low on-resistance, suitable for high-efficiency switching applications
- **Operating temperature range**: -55°C to +150°C
- **Drain-source breakdown voltage**: 60V
- **Gate charge (Qg)**: 22nC (typical)
- **Gate capacitance (C_GS)**: 220pF (typical)

Domain and module applications:

3. Application fields and module examples

**SM6056NSU-VB** MOSFET is widely used in a variety of electronic and power systems, especially in situations where high-efficiency switching, high current and high voltage tolerance are required. The following are several typical application fields and modules:

- **Power management system**
The low R_DS(ON) and high current tolerance of SM6056NSU-VB make it an ideal switching element in power management systems. It can be used in efficient DC-DC converters, battery chargers, inverters and voltage regulation modules to reduce energy loss and improve power efficiency.

- **Motor drive circuit**
In motor control and drive circuits, SM6056NSU-VB can be used in the switching unit of the motor controller to reduce switching losses and improve the efficiency of the drive system. It is particularly suitable for power tools, electric vehicles and fan drive systems that require high current transmission.

- **Automotive Power Electronics Systems**
The high current carrying capacity and low on-resistance of this MOSFET make it widely used in automotive electronic systems, especially in electric vehicle (EV) chargers, automotive power management systems, and auxiliary circuits. Its high temperature resistance makes it particularly suitable for automotive applications.

- **LED Driver and Lighting Applications**
In LED driver circuits, the SM6056NSU-VB can be used as a switching element for current control and power conversion, improving the driving efficiency and stability of LED lamps. Due to its low on-resistance, it can effectively reduce system heating and improve heat dissipation performance.

- **Power Amplifier and Audio Amplifier**
Due to the high efficiency and low power consumption of the SM6056NSU-VB, it can also be used in power amplifiers, audio amplifiers and other fields to provide higher power output while reducing heat loss.

This MOSFET is suitable for various applications that require high current, low on-resistance and high voltage handling capabilities, especially in areas with high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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