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SM6008NSG-VB Product details
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1. Product Introduction
**SM6008NSG-VB** is a **unipolar N-channel MOSFET** in **TO263** package, with **60V** drain-source voltage (VDS)** and **±20V** gate-source voltage (VGS)**. The **threshold voltage (Vth)** of this type of MOSFET is 3V, which can effectively conduct at a lower gate voltage. Its **on-resistance (RDS(ON))** is 12mΩ at VGS=4.5V and 3.2mΩ at VGS=10V, ensuring low power loss and high efficiency when operating under high current conditions. The maximum **drain current (ID)** is 210A, which makes the SM6008NSG-VB very suitable for applications with high current loads. The **Trench technology** is used to provide excellent performance and low heat loss, making it very suitable for high-efficiency power supplies, motor drives and other applications requiring high current and high voltage.
**SM6008NSG-VB** is a **unipolar N-channel MOSFET** in **TO263** package, with **60V** drain-source voltage (VDS)** and **±20V** gate-source voltage (VGS)**. The **threshold voltage (Vth)** of this type of MOSFET is 3V, which can effectively conduct at a lower gate voltage. Its **on-resistance (RDS(ON))** is 12mΩ at VGS=4.5V and 3.2mΩ at VGS=10V, ensuring low power loss and high efficiency when operating under high current conditions. The maximum **drain current (ID)** is 210A, which makes the SM6008NSG-VB very suitable for applications with high current loads. The **Trench technology** is used to provide excellent performance and low heat loss, making it very suitable for high-efficiency power supplies, motor drives and other applications requiring high current and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO263
- **Configuration**: Unipolar N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 3.2mΩ@VGS=10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench technology
**Operating voltage**: The maximum drain-source voltage of SM6008NSG-VB is 60V, which is suitable for medium voltage power management and switching power supply applications.
**On-resistance**: This MOSFET has an ultra-low on-resistance, ensuring low power loss and less heat generation under high current operating conditions.
**Threshold voltage**: With a Vth of 3V, it can stably conduct at a lower gate voltage, improving the operating efficiency under low voltage control.
**Current carrying capacity**: The maximum leakage current is 210A, making this MOSFET very suitable for high-power power supplies and high-current drive applications.
**Technical features**: The use of Trench technology can effectively reduce switching losses and improve overall power efficiency, while providing better thermal management and lower thermal resistance.
- **Package type**: TO263
- **Configuration**: Unipolar N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 3.2mΩ@VGS=10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench technology
**Operating voltage**: The maximum drain-source voltage of SM6008NSG-VB is 60V, which is suitable for medium voltage power management and switching power supply applications.
**On-resistance**: This MOSFET has an ultra-low on-resistance, ensuring low power loss and less heat generation under high current operating conditions.
**Threshold voltage**: With a Vth of 3V, it can stably conduct at a lower gate voltage, improving the operating efficiency under low voltage control.
**Current carrying capacity**: The maximum leakage current is 210A, making this MOSFET very suitable for high-power power supplies and high-current drive applications.
**Technical features**: The use of Trench technology can effectively reduce switching losses and improve overall power efficiency, while providing better thermal management and lower thermal resistance.
Domain and module applications：
3. Application fields and modules
**1. Efficient power management: **
- **SM6008NSG-VB**'s low on-resistance and high current carrying capacity make it very suitable for **efficient power management systems**. Especially in **DC-DC converters** and **AC-DC adapters**, it can effectively reduce power losses during the conversion process and improve conversion efficiency. Its high current carrying capacity makes it suitable for high-power power supply applications.
**2. Electric motor drive: **
- In **electric motor drive** applications, SM6008NSG-VB, as an efficient switching element, can withstand large currents and maintain low on-resistance, ensuring that the electric motor drive process is efficient and stable. Especially in applications that require high-frequency switching operations, low RDS(ON) ensures the energy efficiency of the system.
**3. Power Tools and Industrial Equipment: **
- **SM6008NSG-VB**'s high current carrying capacity makes it ideal for use in **power tools** and **industrial automation equipment**. It can operate at high current without excessive power loss, thereby improving the overall performance and reliability of the system.
**4. High Voltage Switching Power Supply: **
- In **high voltage switching power supply** systems, SM6008NSG-VB can work as a **power switch** and withstand drain-source voltages up to 60V. Its low on-resistance can significantly reduce switching losses and is suitable for high-power applications such as server power supplies, power electronics equipment, etc.
**5. Battery Management System (BMS): **
- In **battery management systems (BMS)**, SM6008NSG-VB can be used for battery charging and discharging control. Its high current carrying capacity and low on-resistance characteristics ensure that there is no excessive energy loss during the battery charging and discharging process, thereby improving the battery's efficiency and life.
**6. Solar inverter: **
- **SM6008NSG-VB** is suitable for the power switch part of **solar inverter**. Due to its excellent conduction characteristics and high current handling capability, it can convert DC power into AC power in solar systems and minimize power loss, thereby improving the energy efficiency of the overall system.
In summary, SM6008NSG-VB is a high-efficiency, low-power, high-current carrying MOSFET that is suitable for a variety of high-efficiency power conversion, motor drives, industrial applications, and battery management systems, especially in power management modules that require high current and low on-resistance.
**1. Efficient power management: **
- **SM6008NSG-VB**'s low on-resistance and high current carrying capacity make it very suitable for **efficient power management systems**. Especially in **DC-DC converters** and **AC-DC adapters**, it can effectively reduce power losses during the conversion process and improve conversion efficiency. Its high current carrying capacity makes it suitable for high-power power supply applications.
**2. Electric motor drive: **
- In **electric motor drive** applications, SM6008NSG-VB, as an efficient switching element, can withstand large currents and maintain low on-resistance, ensuring that the electric motor drive process is efficient and stable. Especially in applications that require high-frequency switching operations, low RDS(ON) ensures the energy efficiency of the system.
**3. Power Tools and Industrial Equipment: **
- **SM6008NSG-VB**'s high current carrying capacity makes it ideal for use in **power tools** and **industrial automation equipment**. It can operate at high current without excessive power loss, thereby improving the overall performance and reliability of the system.
**4. High Voltage Switching Power Supply: **
- In **high voltage switching power supply** systems, SM6008NSG-VB can work as a **power switch** and withstand drain-source voltages up to 60V. Its low on-resistance can significantly reduce switching losses and is suitable for high-power applications such as server power supplies, power electronics equipment, etc.
**5. Battery Management System (BMS): **
- In **battery management systems (BMS)**, SM6008NSG-VB can be used for battery charging and discharging control. Its high current carrying capacity and low on-resistance characteristics ensure that there is no excessive energy loss during the battery charging and discharging process, thereby improving the battery's efficiency and life.
**6. Solar inverter: **
- **SM6008NSG-VB** is suitable for the power switch part of **solar inverter**. Due to its excellent conduction characteristics and high current handling capability, it can convert DC power into AC power in solar systems and minimize power loss, thereby improving the energy efficiency of the overall system.
In summary, SM6008NSG-VB is a high-efficiency, low-power, high-current carrying MOSFET that is suitable for a variety of high-efficiency power conversion, motor drives, industrial applications, and battery management systems, especially in power management modules that require high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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