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SM4912TSKC-TRG-VB Product details

Product introduction:

Product Introduction (SM4912TSKC-TRG-VB MOSFET)

The SM4912TSKC-TRG-VB is a half-bridge N+N channel MOSFET in SOP8 package, designed for high-efficiency power conversion and power management applications. This MOSFET adopts Trench technology, has low on-resistance (RDS(ON)) and high switching efficiency, and is suitable for power modules with high-frequency switching and low-voltage control. It has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 8A, which makes it excellent in low-voltage and high-current applications. It is widely used in automotive electronics, power conversion, power tools and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 8A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Half-Bridge-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Half-Bridge-N+N
Detailed parameter description (SM4912TSKC-TRG-VB)

- **Package type**: SOP8
- **Configuration**: Half-Bridge-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 8A
- **Technology**: Trench technology
- **Operating temperature range**: Typically -55°C to 150°C
- **Power loss**: Depending on the working conditions, suitable for designs that require low power consumption and high performance

Domain and module applications:

Application fields and module examples

1. **DC-DC converter**
Since the SM4912TSKC-TRG-VB adopts a half-bridge structure, it is suitable for DC-DC converters (especially buck converters and boost converters). Its low on-resistance (RDS(ON)) makes the conversion efficiency high, and it can withstand high-frequency switching operation, and has excellent performance in voltage and current control.

2. **Power tool drive system**
The high current handling capacity (8A) of the SM4912TSKC-TRG-VB makes it an ideal choice for power tool drive systems. For example, in tools such as electric wrenches and electric drills, it can be used as an efficient switching element for power conversion and motor control. Through its low on-resistance, it can effectively reduce power loss and improve the working efficiency of the tool.

3. **Battery Management System (BMS)**
In the battery management system (BMS), SM4912TSKC-TRG-VB can achieve efficient battery voltage conversion and current monitoring. Its low RDS(ON) performance helps to extend battery life and reduce heat generation, and is a core component in battery charge and discharge control and protection circuits.

4. **Automotive Electronic Power Module**
This MOSFET is very suitable for automotive electronics, especially in vehicle power management modules, low-voltage battery management systems, and power conversion modules. Its high current handling capability and low power consumption characteristics can improve the stability and efficiency of automotive electronic systems, especially in situations where cars require efficient power conversion and battery charging.

5. **LED Driver Power**
In LED driver power modules, SM4912TSKC-TRG-VB is suitable for current control and power conversion. Through the half-bridge configuration, it can effectively regulate the current output, ensure the stable driving of the LED, and provide efficient power conversion to extend the service life of the LED.

6. **High-frequency switching power supply**
Due to its low on-resistance and excellent switching performance, this MOSFET is suitable for high-frequency switching power supplies (such as switching power supplies, inverters, etc.). In these applications, the performance advantage of SM4912TSKC-TRG-VB is reflected in the low power loss at high frequency, making the power system more efficient and stable.

In short, SM4912TSKC-TRG-VB is a highly integrated, low-power, high-efficiency half-bridge MOSFET, which is suitable for various high-efficiency power conversion and management systems, and has broad application prospects in many fields such as power management, automotive electronics, power tools and LED drivers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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