Product introduction：
1. Product Introduction
**SM4506NHKP-VB** is a high-performance N-Channel MOSFET in DFN8 (5x6) package, designed for high current and low power consumption applications. This model has an extremely low on-resistance (RDS(ON)), only 3mΩ at VGS=10V, ensuring minimal power loss under high current conditions. Its maximum drain voltage (VDS) is 30V and its maximum drain current (ID) is 120A, which is suitable for high-performance, high-current switching applications such as power management, electric vehicle drive, solar inverters, etc.
With its Trench technology-based design, **SM4506NHKP-VB** provides superior conductivity and thermal stability, suitable for applications with high power density and high current requirements. Its low RDS(ON) feature results in lower temperature rise at high current, improving the efficiency and reliability of the overall system.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------------|
| **Package** | DFN8(5x6) |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 30V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 1.7V |
| **RDS(ON) (On-Resistance)** | 5mΩ (at VGS=4.5V), 3mΩ (at VGS=10V) |
| **ID (Drain Current)** | 120A |
| **Technology** | Trench |
- **VDS (Drain-Source Voltage)**: The maximum drain voltage of this MOSFET is 30V, which is suitable for low-voltage switching applications such as low-voltage power management, load switches, DC-DC converters, etc.
- **VGS (Gate-Source Voltage)**: Supporting a gate voltage of ±20V enables this MOSFET to adapt to a variety of drive requirements and is suitable for various power circuits and switch control systems.
- **Vth (Threshold Voltage)**: The threshold voltage is 1.7V, which means that the MOSFET can start at a lower gate voltage and has a faster switching response.
- **RDS(ON) (On-Resistance)**: When VGS=4.5V, the on-resistance is 5mΩ; when VGS=10V, the on-resistance is 3mΩ. The low on-resistance enables the MOSFET to have lower power loss during high current transmission, which can significantly improve the overall power efficiency.
- **ID (drain current)**: The maximum drain current is 120A, which makes it suitable for applications with high current loads and ensures stable operation under high current to avoid overheating or performance degradation.
Domain and module applications：
3. Application fields and modules
**SM4506NHKP-VB** is suitable for various high-power and high-efficiency power supply systems. The following are its typical application fields:
- **Power Management Systems**: This MOSFET can be widely used in power management modules such as DC-DC converters, load regulators, and voltage regulators, especially for applications that require high current and low power loss. Its low RDS(ON) performance ensures efficient power conversion and reduces energy loss.
- **Electric Vehicle (EV) Drive System**: In the drive system of electric vehicles, SM4506NHKP-VB can be used in motor drive circuits, battery management systems (BMS) and charging management systems. Its high current handling capability and low on-resistance ensure that the system operates under conditions of high efficiency and low heat generation, improving the overall energy efficiency of electric vehicles.
- **Solar Inverters**: The SM4506NHKP-VB is also very suitable for inverters in solar power generation systems, which can efficiently convert DC power to AC power. With its low RDS(ON) and high current handling capabilities, it can significantly improve system efficiency, reduce energy losses, and ensure stable and efficient operation of solar systems.
- **LED Driver Power Supplies**: This MOSFET is suitable for high-efficiency LED driver power systems, especially high-power LED lighting equipment. The SM4506NHKP-VB can reduce power losses while providing precise current regulation, ensuring stable operation of LEDs in high-efficiency mode.
- **High-Efficiency Power Supply Modules**: In various power conversion applications, the SM4506NHKP-VB can be used as the core switching element of high-efficiency power modules to adapt to various load conditions and optimize power transmission efficiency, especially for high-current occasions that require low conduction losses.
- **Battery Charging Systems**: This MOSFET can be used in battery charging systems to support high current flow and reduce energy loss in the system. It is suitable for various types of chargers, including power tools, electric bicycles, mobile devices, etc.
- **Automotive Power Systems**: The SM4506NHKP-VB is suitable for automotive power systems such as battery management, electric power steering (EPS) control units, power window drivers, etc. Through its high current capability and low RDS(ON) characteristics, it provides strong support in situations requiring stability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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