Product introduction：
1. Product Introduction
**SM4375NSKP-VB** is a high-performance N-Channel MOSFET in a DFN8 (5x6) package, designed for high current and high-efficiency switching applications. This model features an ultra-low on-resistance (RDS(ON)) of 3mΩ at VGS=10V, ensuring extremely low power loss in high current environments. With a maximum drain voltage (VDS) of 30V and a maximum drain current (ID) of 120A, it is suitable for power conversion systems and power management circuits that require high efficiency and high power.
With its Trench technology-based design, **SM4375NSKP-VB** provides low RDS(ON) and superior thermal performance, ensuring its stable operation under high current loads, and is particularly suitable for high power and high frequency application scenarios such as DC-DC converters, electric vehicle (EV) power supplies, solar inverters and other fields.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------------|
| **Package** | DFN8(5x6) |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 30V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 1.7V |
| **RDS(ON) (On-Resistance)** | 5mΩ (at VGS=4.5V), 3mΩ (at VGS=10V) |
| **ID (Drain Current)** | 120A |
| **Technology** | Trench |
- **VDS (Drain-Source Voltage)**: The maximum drain voltage is 30V, which is suitable for low-voltage switching applications such as low-voltage power management systems, DC-DC converters, load switches, etc.
- **VGS (Gate-Source Voltage)**: Supporting a gate voltage of ±20V, this MOSFET can adapt to a variety of drive requirements and is suitable for various power circuits and switch control systems.
- **Vth (Threshold Voltage)**: The threshold voltage is 1.7V, which means that the MOSFET can start at a lower gate voltage and has a faster switching response.
- **RDS(ON) (On-Resistance)**: At VGS=4.5V, the on-resistance is 5mΩ; at VGS=10V, the on-resistance is 3mΩ. The low on-resistance minimizes the power loss of the MOSFET during high current transmission, which can significantly improve the overall power efficiency.
- **ID (drain current)**: The maximum drain current is 120A, making it suitable for applications with high current loads, ensuring stable operation under high current conditions to avoid overheating or performance degradation.
Domain and module applications：
3. Application fields and modules
**SM4375NSKP-VB** has high current capability and low on-resistance, and is widely used in systems that require high efficiency and high current transmission. The following are its typical application fields:
- **Power Management Systems**: SM4375NSKP-VB can be used in efficient power management modules such as DC-DC converters, voltage regulators, battery management systems (BMS), etc., especially suitable for occasions that require high current loads and strict efficiency requirements.
- **Electric Vehicle (EV) Drive System**: This MOSFET can be used as a key switching element in the battery management system (BMS) and motor drive system of electric vehicles. It can provide efficient current control under high current conditions, ensure stable operation of the system, and improve the overall efficiency of electric vehicles.
- **Solar Inverters**: In solar power generation systems, SM4375NSKP-VB can be used in inverters to achieve efficient power conversion. Due to its low RDS(ON) and high current handling capability, it can reduce energy losses during the conversion process and improve the performance of the inverter.
- **LED Driver Power Supplies**: This MOSFET is suitable for LED driver power supplies and can provide precise current regulation to ensure high-efficiency operation of LEDs. It is suitable for high-power LED lighting, commercial lighting and industrial lighting.
- **High-Efficiency Power Supply Modules**: As a switching element of high-efficiency power modules, SM4375NSKP-VB is suitable for a variety of high-efficiency power conversion systems such as power distribution, charging systems and converters.
- **Battery Charging Systems**: In battery charging systems, SM4375NSKP-VB is a key switching element that can provide stable current switching and improve charging efficiency. This product is suitable for applications such as power tools, mobile devices and electric vehicle chargers.
- **Automotive Power Systems**: This MOSFET can be used in various automotive power systems, such as battery-powered systems, on-board power conversion systems, drive systems, etc. It can withstand large currents and ensure efficient power conversion and load regulation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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