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SM4301PSU-VB Product details
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1. Product Introduction
**SM4301PSU-VB** is a high-performance P-Channel MOSFET in a TO252 package, designed for high-efficiency, high-power power management and switching applications. With a maximum drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -60A, this MOSFET is suitable for negative voltage power conversion and high-current switching circuits. By adopting Trench technology, it has an extremely low on-resistance (RDS(ON)) of 9mΩ at VGS=10V, which can significantly reduce power loss and improve overall system efficiency.
**SM4301PSU-VB** is particularly suitable for applications that require high current handling, low power loss, and high switching efficiency. It is widely used in inverters, power management, LED drivers, electric vehicle (EV) drive systems and other scenarios that require efficient power conversion.
**SM4301PSU-VB** is a high-performance P-Channel MOSFET in a TO252 package, designed for high-efficiency, high-power power management and switching applications. With a maximum drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -60A, this MOSFET is suitable for negative voltage power conversion and high-current switching circuits. By adopting Trench technology, it has an extremely low on-resistance (RDS(ON)) of 9mΩ at VGS=10V, which can significantly reduce power loss and improve overall system efficiency.
**SM4301PSU-VB** is particularly suitable for applications that require high current handling, low power loss, and high switching efficiency. It is widely used in inverters, power management, LED drivers, electric vehicle (EV) drive systems and other scenarios that require efficient power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. Detailed parameter description
| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------------|
| **Package** | TO252 |
| **Configuration** | Unipolar P-Channel |
| **VDS (Drain-Source Voltage)** | -30V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | -2.5V |
| **RDS(ON) (On-Resistance)** | 11mΩ (at VGS=4.5V), 9mΩ (at VGS=10V) |
| **ID (Drain Current)** | -60A |
| **Technology** | Trench |
- **VDS (Drain-Source Voltage)**: The maximum supported VDS of this MOSFET is -30V, which is suitable for low-voltage power conversion applications, such as low-voltage load drive circuits and inverters.
- **VGS (Gate-Source Voltage)**: Supports gate voltage of ±20V, can adapt to different drive voltage requirements, and is suitable for switching applications in a variety of power circuits.
- **Vth (Threshold Voltage)**: The threshold voltage of this MOSFET is -2.5V, which is suitable for low gate voltage drive applications. It can work effectively at a lower gate voltage, thereby improving switching speed and response.
- **RDS(ON) (On-Resistance)**: At VGS=4.5V, RDS(ON) is 11mΩ, and at VGS=10V it is 9mΩ. It has a very low on-resistance, effectively reducing power loss, and is particularly suitable for high-current, high-frequency switching circuits.
- **ID (Drain Current)**: This MOSFET has a maximum drain current of -60A, suitable for high current applications such as power conversion and high current switching circuits.
| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------------|
| **Package** | TO252 |
| **Configuration** | Unipolar P-Channel |
| **VDS (Drain-Source Voltage)** | -30V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | -2.5V |
| **RDS(ON) (On-Resistance)** | 11mΩ (at VGS=4.5V), 9mΩ (at VGS=10V) |
| **ID (Drain Current)** | -60A |
| **Technology** | Trench |
- **VDS (Drain-Source Voltage)**: The maximum supported VDS of this MOSFET is -30V, which is suitable for low-voltage power conversion applications, such as low-voltage load drive circuits and inverters.
- **VGS (Gate-Source Voltage)**: Supports gate voltage of ±20V, can adapt to different drive voltage requirements, and is suitable for switching applications in a variety of power circuits.
- **Vth (Threshold Voltage)**: The threshold voltage of this MOSFET is -2.5V, which is suitable for low gate voltage drive applications. It can work effectively at a lower gate voltage, thereby improving switching speed and response.
- **RDS(ON) (On-Resistance)**: At VGS=4.5V, RDS(ON) is 11mΩ, and at VGS=10V it is 9mΩ. It has a very low on-resistance, effectively reducing power loss, and is particularly suitable for high-current, high-frequency switching circuits.
- **ID (Drain Current)**: This MOSFET has a maximum drain current of -60A, suitable for high current applications such as power conversion and high current switching circuits.
Domain and module applications：
3. Applicable fields and modules
**SM4301PSU-VB** is suitable for multiple high-efficiency applications due to its high current capability, low on-resistance and high efficiency. Here are some typical application examples:
- **Power Management Systems**: SM4301PSU-VB is suitable for power management modules such as power converters and battery management systems (BMS), especially in inverters and power regulators, which can provide efficient power conversion and reduce system energy consumption.
- **Inverters**: This MOSFET can be widely used in inverters, especially DC-AC inverters that require negative voltage control. It is suitable as a switching element in solar systems, electric vehicle drives and UPS systems to provide efficient power conversion.
- **Electric Vehicle (EV) Drive Systems**: Due to its high current support (up to 60A) and low on-resistance, the SM4301PSU-VB is particularly suitable for the battery management system (BMS) and electric drive system of electric vehicles, used to drive motors and power control, and optimize the performance and energy efficiency of electric vehicles.
- **LED Driver Power Supplies**: In LED driver power supplies, the SM4301PSU-VB can be used as an efficient current control switch to reduce power loss, improve the efficiency of LED driver power supplies, and extend the service life of LED lighting products.
- **Power Conversion and Distribution Systems**: This MOSFET can be widely used in power conversion systems, suitable for power distribution, DC-DC converters, AC-DC converters and other systems, to improve the efficiency and stability of power distribution systems, and is particularly suitable for high-efficiency applications with low voltage conversion.
- **Telecom Power Supplies**: SM4301PSU-VB can provide efficient and stable power solutions for communication systems, especially in power modules that require low voltage and high current output. It can be used in high-efficiency power applications such as communication base stations, power modules, and data centers.
- **High-Efficiency Battery Charging Systems**: In battery charging systems, the low on-resistance characteristics of SM4301PSU-VB can effectively reduce power loss and provide efficient battery charging functions. It is widely used in various high-efficiency charging devices and modules.
**SM4301PSU-VB** is suitable for multiple high-efficiency applications due to its high current capability, low on-resistance and high efficiency. Here are some typical application examples:
- **Power Management Systems**: SM4301PSU-VB is suitable for power management modules such as power converters and battery management systems (BMS), especially in inverters and power regulators, which can provide efficient power conversion and reduce system energy consumption.
- **Inverters**: This MOSFET can be widely used in inverters, especially DC-AC inverters that require negative voltage control. It is suitable as a switching element in solar systems, electric vehicle drives and UPS systems to provide efficient power conversion.
- **Electric Vehicle (EV) Drive Systems**: Due to its high current support (up to 60A) and low on-resistance, the SM4301PSU-VB is particularly suitable for the battery management system (BMS) and electric drive system of electric vehicles, used to drive motors and power control, and optimize the performance and energy efficiency of electric vehicles.
- **LED Driver Power Supplies**: In LED driver power supplies, the SM4301PSU-VB can be used as an efficient current control switch to reduce power loss, improve the efficiency of LED driver power supplies, and extend the service life of LED lighting products.
- **Power Conversion and Distribution Systems**: This MOSFET can be widely used in power conversion systems, suitable for power distribution, DC-DC converters, AC-DC converters and other systems, to improve the efficiency and stability of power distribution systems, and is particularly suitable for high-efficiency applications with low voltage conversion.
- **Telecom Power Supplies**: SM4301PSU-VB can provide efficient and stable power solutions for communication systems, especially in power modules that require low voltage and high current output. It can be used in high-efficiency power applications such as communication base stations, power modules, and data centers.
- **High-Efficiency Battery Charging Systems**: In battery charging systems, the low on-resistance characteristics of SM4301PSU-VB can effectively reduce power loss and provide efficient battery charging functions. It is widely used in various high-efficiency charging devices and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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