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SM4020NHG-VB Product details
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1. Product Introduction
**SM4020NHG-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high-current, high-efficiency power management and switching applications. Its maximum drain-source voltage (VDS) is 40V, and the maximum drain current (ID) can reach 150A, which is suitable for high-power, high-efficiency electronic systems. This MOSFET adopts advanced Trench technology and has a very low on-resistance (RDS(ON)) of 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, which can significantly reduce power loss and heat generation, thereby improving system efficiency and reliability.
**SM4020NHG-VB**'s high current carrying capacity and low on-resistance make it particularly suitable for power conversion, drive circuits and electric vehicles. Its low power consumption characteristics can effectively improve system performance and reduce energy loss, and it is very suitable for high-frequency switching and power management applications that require high efficiency and high current.
**SM4020NHG-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high-current, high-efficiency power management and switching applications. Its maximum drain-source voltage (VDS) is 40V, and the maximum drain current (ID) can reach 150A, which is suitable for high-power, high-efficiency electronic systems. This MOSFET adopts advanced Trench technology and has a very low on-resistance (RDS(ON)) of 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, which can significantly reduce power loss and heat generation, thereby improving system efficiency and reliability.
**SM4020NHG-VB**'s high current carrying capacity and low on-resistance make it particularly suitable for power conversion, drive circuits and electric vehicles. Its low power consumption characteristics can effectively improve system performance and reduce energy loss, and it is very suitable for high-frequency switching and power management applications that require high efficiency and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------------|
| **Package** | TO263 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 40V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 3V |
| **RDS(ON) (On-Resistance)** | 2.5mΩ (at VGS=4.5V), 2mΩ (at VGS=10V) |
| **ID (Drain Current)** | 150A |
| **Technology** | Trench |
- **VDS (drain-source voltage)**: Maximum of 40V, suitable for medium voltage power switching and conversion applications, can provide higher voltage carrying capacity, suitable for battery-powered and low-voltage power management systems.
- **VGS (gate-source voltage)**: This MOSFET supports a maximum gate voltage of ±20V, which is compatible with a variety of drive voltage requirements and is particularly suitable for efficient power management and switching systems.
- **Vth (threshold voltage)**: The threshold voltage is 3V, ensuring that it can start to conduct at a lower gate voltage, improving the switching response speed and sensitivity.
- **RDS(ON) (on-resistance)**: It is 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V. It has extremely low on-resistance, reduces power loss and improves system efficiency, and is particularly suitable for high current and high frequency switching applications.
- **ID (drain current)**: With a maximum drain current of 150A, it is capable of carrying large currents and is suitable for applications that require high current control and high power handling.
| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------------|
| **Package** | TO263 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 40V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 3V |
| **RDS(ON) (On-Resistance)** | 2.5mΩ (at VGS=4.5V), 2mΩ (at VGS=10V) |
| **ID (Drain Current)** | 150A |
| **Technology** | Trench |
- **VDS (drain-source voltage)**: Maximum of 40V, suitable for medium voltage power switching and conversion applications, can provide higher voltage carrying capacity, suitable for battery-powered and low-voltage power management systems.
- **VGS (gate-source voltage)**: This MOSFET supports a maximum gate voltage of ±20V, which is compatible with a variety of drive voltage requirements and is particularly suitable for efficient power management and switching systems.
- **Vth (threshold voltage)**: The threshold voltage is 3V, ensuring that it can start to conduct at a lower gate voltage, improving the switching response speed and sensitivity.
- **RDS(ON) (on-resistance)**: It is 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V. It has extremely low on-resistance, reduces power loss and improves system efficiency, and is particularly suitable for high current and high frequency switching applications.
- **ID (drain current)**: With a maximum drain current of 150A, it is capable of carrying large currents and is suitable for applications that require high current control and high power handling.
Domain and module applications：
3. Application fields and modules
**SM4020NHG-VB** has extremely high current carrying capacity and low on-resistance, suitable for a wide range of high-efficiency applications. Here are a few typical application examples:
- **Power Management Systems**: This MOSFET is suitable for various power converters and power management modules, such as DC-DC converters and AC-DC power supplies. The low on-resistance enables it to reduce power loss in high-efficiency power supplies and is suitable for high-current, high-efficiency power modules.
- **Electric Vehicles (EV) and Battery Management Systems (BMS)**: The high current handling capability of SM4020NHG-VB makes it an ideal choice for electric vehicles (such as electric vehicles, electric bicycles) and battery management systems (BMS). It can effectively control the charging and discharging process of the battery, ensure the energy efficiency of the system and extend the battery life.
- **Industrial Automation and Drive Systems**: In industrial automation and high-power drive systems, SM4020NHG-VB can be used to drive motors, actuators and high-power switches. Its low on-resistance and high current capability enable it to work stably under high-frequency switching, and is widely used in industrial robots, electric machinery, and automated production lines.
- **Power Converters**: SM4020NHG-VB is an ideal choice for high-power power conversion systems. It can work efficiently at high frequencies, and is particularly suitable for renewable energy systems such as solar inverters and wind power generation systems to provide high-efficiency power conversion.
- **High-Efficiency Power Modules**: Due to its low RDS(ON) and high current capability, SM4020NHG-VB can be used in high-power power modules to improve the efficiency of power modules and reduce energy loss, especially for power systems that require high power output.
- **LED Driver**: In LED lighting systems, SM4020NHG-VB is suitable for driving LED modules, improving system efficiency and reducing heat generation through effective current control and energy conversion, especially for applications such as commercial lighting, stage lighting, and street lighting.
- **Data Center Power Supply**: SM4020NHG-VB can also be used in data center power management systems. In efficient power management and redundant power systems, the low on-resistance and high current capability of MOSFETs help reduce power losses in data centers and improve overall energy efficiency.
**SM4020NHG-VB** has extremely high current carrying capacity and low on-resistance, suitable for a wide range of high-efficiency applications. Here are a few typical application examples:
- **Power Management Systems**: This MOSFET is suitable for various power converters and power management modules, such as DC-DC converters and AC-DC power supplies. The low on-resistance enables it to reduce power loss in high-efficiency power supplies and is suitable for high-current, high-efficiency power modules.
- **Electric Vehicles (EV) and Battery Management Systems (BMS)**: The high current handling capability of SM4020NHG-VB makes it an ideal choice for electric vehicles (such as electric vehicles, electric bicycles) and battery management systems (BMS). It can effectively control the charging and discharging process of the battery, ensure the energy efficiency of the system and extend the battery life.
- **Industrial Automation and Drive Systems**: In industrial automation and high-power drive systems, SM4020NHG-VB can be used to drive motors, actuators and high-power switches. Its low on-resistance and high current capability enable it to work stably under high-frequency switching, and is widely used in industrial robots, electric machinery, and automated production lines.
- **Power Converters**: SM4020NHG-VB is an ideal choice for high-power power conversion systems. It can work efficiently at high frequencies, and is particularly suitable for renewable energy systems such as solar inverters and wind power generation systems to provide high-efficiency power conversion.
- **High-Efficiency Power Modules**: Due to its low RDS(ON) and high current capability, SM4020NHG-VB can be used in high-power power modules to improve the efficiency of power modules and reduce energy loss, especially for power systems that require high power output.
- **LED Driver**: In LED lighting systems, SM4020NHG-VB is suitable for driving LED modules, improving system efficiency and reducing heat generation through effective current control and energy conversion, especially for applications such as commercial lighting, stage lighting, and street lighting.
- **Data Center Power Supply**: SM4020NHG-VB can also be used in data center power management systems. In efficient power management and redundant power systems, the low on-resistance and high current capability of MOSFETs help reduce power losses in data centers and improve overall energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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