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SM3117NSU-VB Product details
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1. Product Introduction
**SM3117NSU-VB** is a high-performance unipolar N-Channel MOSFET in TO252 package, designed for high current and high power applications. Its maximum drain-source voltage (VDS) is 30V, suitable for medium and low voltage power conversion, load control and high-efficiency switching applications. This MOSFET has an ultra-low on-resistance (RDS(ON)) of 3mΩ (at VGS=4.5V) and 2mΩ (at VGS=10V), which enables it to maintain extremely low power loss under high current conditions. Its maximum drain current (ID) can reach 100A, providing high current load carrying capacity, which is very suitable for power electronics applications that require fast switching and high power handling. SM3117NSU-VB uses Trench technology to ensure excellent switching performance, low conduction loss and high reliability, suitable for various types of high-efficiency power conversion and drive systems.
**SM3117NSU-VB** is a high-performance unipolar N-Channel MOSFET in TO252 package, designed for high current and high power applications. Its maximum drain-source voltage (VDS) is 30V, suitable for medium and low voltage power conversion, load control and high-efficiency switching applications. This MOSFET has an ultra-low on-resistance (RDS(ON)) of 3mΩ (at VGS=4.5V) and 2mΩ (at VGS=10V), which enables it to maintain extremely low power loss under high current conditions. Its maximum drain current (ID) can reach 100A, providing high current load carrying capacity, which is very suitable for power electronics applications that require fast switching and high power handling. SM3117NSU-VB uses Trench technology to ensure excellent switching performance, low conduction loss and high reliability, suitable for various types of high-efficiency power conversion and drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
| **Parameter** | **Description** |
|--------------------|-----------------------------------------------------|
| **Package** | TO252 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 30V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 1.7V |
| **RDS(ON) (On-Resistance)** | 3mΩ (at VGS=4.5V), 2mΩ (at VGS=10V) |
| **ID (Drain Current)** | 100A |
| **Technology** | Trench |
- **VDS (Drain-Source Voltage)**: The rated VDS of this MOSFET is 30V, which is suitable for medium and low voltage applications, especially power management and power conversion systems that need to withstand medium voltage and large current loads.
- **VGS (Gate-Source Voltage)**: This MOSFET supports a maximum gate voltage of ±20V, making it compatible with most standard drive circuits and widely used in various switching circuits.
- **Vth (Threshold Voltage)**: The threshold voltage is 1.7V, which enables the MOSFET to turn on quickly at a lower gate voltage, optimizes the switching response of the system, and is suitable for low-voltage working environments.
- **RDS(ON) (On-Resistance)**: The on-resistance of this MOSFET is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V. The extremely low on-resistance ensures low power loss and efficient conduction capability under high current conditions.
- **ID (drain current)**: The maximum drain current of this MOSFET is 100A, which can carry large current loads and is suitable for high-power applications, especially in power management and motor control.
| **Parameter** | **Description** |
|--------------------|-----------------------------------------------------|
| **Package** | TO252 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 30V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 1.7V |
| **RDS(ON) (On-Resistance)** | 3mΩ (at VGS=4.5V), 2mΩ (at VGS=10V) |
| **ID (Drain Current)** | 100A |
| **Technology** | Trench |
- **VDS (Drain-Source Voltage)**: The rated VDS of this MOSFET is 30V, which is suitable for medium and low voltage applications, especially power management and power conversion systems that need to withstand medium voltage and large current loads.
- **VGS (Gate-Source Voltage)**: This MOSFET supports a maximum gate voltage of ±20V, making it compatible with most standard drive circuits and widely used in various switching circuits.
- **Vth (Threshold Voltage)**: The threshold voltage is 1.7V, which enables the MOSFET to turn on quickly at a lower gate voltage, optimizes the switching response of the system, and is suitable for low-voltage working environments.
- **RDS(ON) (On-Resistance)**: The on-resistance of this MOSFET is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V. The extremely low on-resistance ensures low power loss and efficient conduction capability under high current conditions.
- **ID (drain current)**: The maximum drain current of this MOSFET is 100A, which can carry large current loads and is suitable for high-power applications, especially in power management and motor control.
Domain and module applications：
3. Application fields and modules
- **Power conversion system**: The ultra-low on-resistance and high current carrying capacity of SM3117NSU-VB make it very suitable for high-efficiency power conversion applications such as DC-DC converters, AC-DC power supplies and high-power switching power supplies. Its fast switching capability and low loss characteristics can effectively improve system efficiency and reduce energy waste. It is widely used in industrial power supplies, solar battery chargers and electric vehicle charging facilities.
- **Power tools and battery management systems (BMS)**: In power tools and battery management systems, SM3117NSU-VB can handle high current loads and support battery charging and discharging management. Its low on-resistance ensures the smallest possible energy loss during charging and discharging, while its high current carrying capacity ensures efficient operation of batteries and tools.
- **Servo drive and motor control**: This MOSFET can provide fast switching control in servo drives and motor control systems to help motors run smoothly. Whether in robots, automation equipment or high-performance motor drives, the SM3117NSU-VB ensures efficient and reliable current management.
- **Electric Vehicles (EVs) and Electric Vehicles**: In electric vehicles and other electric vehicles, the SM3117NSU-VB acts as a switching element in the battery management system (BMS), providing efficient current control and energy conversion, optimizing charging, discharging and driving motor performance, and improving the endurance and power output of electric vehicles.
- **Radio Transmitters and Power Amplifiers**: In radio transmitters and power amplifiers, the SM3117NSU-VB can provide efficient power amplification and signal switching. Due to its low on-resistance and high current carrying capacity, it is ideal for a variety of wireless communication devices and broadcast transmission systems.
- **Inverters and Solar Systems**: In inverters (such as solar inverters), the SM3117NSU-VB can efficiently convert electrical energy and convert DC power to AC power. Its low loss and high efficiency make it very suitable for use as a switching element in high-power inverters, ensuring efficient operation and power conversion of the system.
- **High-power switching power supply (SMPS)**: The SM3117NSU-VB is also very suitable for high-power switching power supplies (SMPS), especially those industrial power supplies or server power supplies that need to carry large currents. Its low on-resistance and high current handling capability enable it to reduce heat loss in the system and improve overall efficiency.
- **LED driver power supply**: In LED driver power supplies, the SM3117NSU-VB can be used as a switching element for efficient current management, supporting efficient current switching and ensuring stable lighting of the LED. Its low power loss and high current carrying capacity make it suitable for high-power LED driver modules.
- **Power conversion system**: The ultra-low on-resistance and high current carrying capacity of SM3117NSU-VB make it very suitable for high-efficiency power conversion applications such as DC-DC converters, AC-DC power supplies and high-power switching power supplies. Its fast switching capability and low loss characteristics can effectively improve system efficiency and reduce energy waste. It is widely used in industrial power supplies, solar battery chargers and electric vehicle charging facilities.
- **Power tools and battery management systems (BMS)**: In power tools and battery management systems, SM3117NSU-VB can handle high current loads and support battery charging and discharging management. Its low on-resistance ensures the smallest possible energy loss during charging and discharging, while its high current carrying capacity ensures efficient operation of batteries and tools.
- **Servo drive and motor control**: This MOSFET can provide fast switching control in servo drives and motor control systems to help motors run smoothly. Whether in robots, automation equipment or high-performance motor drives, the SM3117NSU-VB ensures efficient and reliable current management.
- **Electric Vehicles (EVs) and Electric Vehicles**: In electric vehicles and other electric vehicles, the SM3117NSU-VB acts as a switching element in the battery management system (BMS), providing efficient current control and energy conversion, optimizing charging, discharging and driving motor performance, and improving the endurance and power output of electric vehicles.
- **Radio Transmitters and Power Amplifiers**: In radio transmitters and power amplifiers, the SM3117NSU-VB can provide efficient power amplification and signal switching. Due to its low on-resistance and high current carrying capacity, it is ideal for a variety of wireless communication devices and broadcast transmission systems.
- **Inverters and Solar Systems**: In inverters (such as solar inverters), the SM3117NSU-VB can efficiently convert electrical energy and convert DC power to AC power. Its low loss and high efficiency make it very suitable for use as a switching element in high-power inverters, ensuring efficient operation and power conversion of the system.
- **High-power switching power supply (SMPS)**: The SM3117NSU-VB is also very suitable for high-power switching power supplies (SMPS), especially those industrial power supplies or server power supplies that need to carry large currents. Its low on-resistance and high current handling capability enable it to reduce heat loss in the system and improve overall efficiency.
- **LED driver power supply**: In LED driver power supplies, the SM3117NSU-VB can be used as a switching element for efficient current management, supporting efficient current switching and ensuring stable lighting of the LED. Its low power loss and high current carrying capacity make it suitable for high-power LED driver modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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