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SM3113N-VB Product details
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Product Introduction: SM3113N-VB
SM3113N-VB is a **single-channel N-type MOSFET** in a **TO252** package, designed for efficient power management and high current applications. It has a **30V** withstand voltage and is suitable for low-voltage power supplies and load switching applications. The **Vth** of this MOSFET is **1.7V**, allowing startup operation at a lower gate voltage, providing higher efficiency and flexibility. Its **RDS(ON)** is **3mΩ** at **VGS = 4.5V** and **2mΩ** at **VGS = 10V**, which indicates that the MOSFET has extremely low resistance in the on state, helping to reduce power losses and improve system efficiency. The **ID** of the SM3113N-VB reaches **100A**, which is suitable for high current applications and can handle load switches with high power requirements.
SM3113N-VB is a **single-channel N-type MOSFET** in a **TO252** package, designed for efficient power management and high current applications. It has a **30V** withstand voltage and is suitable for low-voltage power supplies and load switching applications. The **Vth** of this MOSFET is **1.7V**, allowing startup operation at a lower gate voltage, providing higher efficiency and flexibility. Its **RDS(ON)** is **3mΩ** at **VGS = 4.5V** and **2mΩ** at **VGS = 10V**, which indicates that the MOSFET has extremely low resistance in the on state, helping to reduce power losses and improve system efficiency. The **ID** of the SM3113N-VB reaches **100A**, which is suitable for high current applications and can handle load switches with high power requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel type**: Single channel N-type
- **Withstand voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: 20V (maximum ±20V)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- **When VGS = 4.5V**: 3mΩ
- **When VGS = 10V**: 2mΩ
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Operating temperature range**: -40°C to +150°C (specific specifications may vary)
- **Package type**: TO252
- **Channel type**: Single channel N-type
- **Withstand voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: 20V (maximum ±20V)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- **When VGS = 4.5V**: 3mΩ
- **When VGS = 10V**: 2mΩ
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Operating temperature range**: -40°C to +150°C (specific specifications may vary)
Domain and module applications：
Application fields and module examples:
1. **Power management and DC-DC converters**:
SM3113N-VB is very suitable for switching elements in **high-efficiency DC-DC converters**. Due to its **low on-resistance** and **high current carrying capacity**, this MOSFET can maintain low power loss under high current load and improve power conversion efficiency. It is widely used in **power adapters**, **high-efficiency power supplies** and **LED driver power supplies** to help improve energy efficiency during the conversion process and reduce system heat generation.
2. **Battery Management System (BMS)**:
In the **Battery Management System (BMS)**, SM3113N-VB can be used as an efficient **charge and discharge switch** for battery protection, current regulation and charge and discharge control. The **100A** high drain current carrying capacity and ultra-low on-resistance of MOSFET help battery systems provide higher efficiency and lower power loss, and are widely used in **electric vehicles** and **renewable energy battery storage systems**.
3. **High-power load switch**:
SM3113N-VB is suitable for **high-power load switch** and can be used as an efficient load switch in **industrial equipment** and **power tools**. Its high current carrying capacity and low on-resistance enable it to effectively control and switch high-power loads, ensuring that energy loss is reduced and system stability is improved when switching loads.
4. **Electric Vehicles (EV) and Battery Drive Systems**:
SM3113N-VB has very suitable characteristics for high-current applications, especially for **battery management systems (BMS)** and **motor drive systems** of **electric vehicles (EV)** and **hybrid electric vehicles (HEV)**. It can carry large currents and can effectively reduce the losses generated during charging and discharging, improve the charging and discharging efficiency of the battery system, and ensure the efficient operation of electric vehicles.
5. **Power Conversion and Inverter Applications**:
In **power conversion** and **inverter applications**, such as **solar inverters** and **uninterruptible power supply (UPS)** systems, the SM3113N-VB acts as a switching element that improves the overall efficiency of the power system. Its high current capability and low on-resistance make it ideal for efficient power conversion, energy storage, and management systems, especially in environments that need to handle high current, high frequency conversion.
6. **Wireless Communication and RF Applications**:
The SM3113N-VB can also be used in **wireless communication equipment** and **RF applications**, especially in **RF power amplifiers** and **signal amplifiers**. The high current carrying capability and low power loss of MOSFETs make them an ideal choice for efficient signal conditioning and amplification in RF equipment.
7. **High-efficiency motor control and drive**:
This MOSFET is also very suitable for **motor control** and **drive systems**, especially in **industrial automation equipment** and **home appliance motor control**. SM3113N-VB can effectively control the start and stop and speed regulation of the motor, and improve the efficiency and control accuracy of the motor by reducing switching losses.
1. **Power management and DC-DC converters**:
SM3113N-VB is very suitable for switching elements in **high-efficiency DC-DC converters**. Due to its **low on-resistance** and **high current carrying capacity**, this MOSFET can maintain low power loss under high current load and improve power conversion efficiency. It is widely used in **power adapters**, **high-efficiency power supplies** and **LED driver power supplies** to help improve energy efficiency during the conversion process and reduce system heat generation.
2. **Battery Management System (BMS)**:
In the **Battery Management System (BMS)**, SM3113N-VB can be used as an efficient **charge and discharge switch** for battery protection, current regulation and charge and discharge control. The **100A** high drain current carrying capacity and ultra-low on-resistance of MOSFET help battery systems provide higher efficiency and lower power loss, and are widely used in **electric vehicles** and **renewable energy battery storage systems**.
3. **High-power load switch**:
SM3113N-VB is suitable for **high-power load switch** and can be used as an efficient load switch in **industrial equipment** and **power tools**. Its high current carrying capacity and low on-resistance enable it to effectively control and switch high-power loads, ensuring that energy loss is reduced and system stability is improved when switching loads.
4. **Electric Vehicles (EV) and Battery Drive Systems**:
SM3113N-VB has very suitable characteristics for high-current applications, especially for **battery management systems (BMS)** and **motor drive systems** of **electric vehicles (EV)** and **hybrid electric vehicles (HEV)**. It can carry large currents and can effectively reduce the losses generated during charging and discharging, improve the charging and discharging efficiency of the battery system, and ensure the efficient operation of electric vehicles.
5. **Power Conversion and Inverter Applications**:
In **power conversion** and **inverter applications**, such as **solar inverters** and **uninterruptible power supply (UPS)** systems, the SM3113N-VB acts as a switching element that improves the overall efficiency of the power system. Its high current capability and low on-resistance make it ideal for efficient power conversion, energy storage, and management systems, especially in environments that need to handle high current, high frequency conversion.
6. **Wireless Communication and RF Applications**:
The SM3113N-VB can also be used in **wireless communication equipment** and **RF applications**, especially in **RF power amplifiers** and **signal amplifiers**. The high current carrying capability and low power loss of MOSFETs make them an ideal choice for efficient signal conditioning and amplification in RF equipment.
7. **High-efficiency motor control and drive**:
This MOSFET is also very suitable for **motor control** and **drive systems**, especially in **industrial automation equipment** and **home appliance motor control**. SM3113N-VB can effectively control the start and stop and speed regulation of the motor, and improve the efficiency and control accuracy of the motor by reducing switching losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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