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SM2A18NSV-VB Product details

Product introduction:

Product Introduction
SM2A18NSV-VB is a single N-channel MOSFET in a SOT223 package, designed for low-power, high-voltage applications. With a maximum drain-source voltage (V_DS) of 200V and a maximum drain current (I_D) of 1A, this model is suitable for switching and control functions in medium voltage environments. Its gate-source voltage (V_GS) is ±20V, turn-on voltage (V_th) is 3V, and on-resistance (R_DS(ON)) is 1200mΩ (V_GS = 10V), which is suitable for low-current, low-power applications. This MOSFET uses Trench technology and has excellent switching performance and thermal management characteristics, which can effectively reduce switching losses. SM2A18NSV-VB is commonly used in battery-powered devices, low-power power modules, and occasions requiring high voltage and low current control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 200V 3V 1A 1200mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 200V 3V 1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 200V 3V 1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
Detailed parameter description
- **Model**: SM2A18NSV-VB
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 200V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 1200mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 1A
- **Maximum power loss (P_d)**: 1.25W (@ 25°C)
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Trench
- **Features**:
- High withstand voltage capability, suitable for high voltage switching applications
- Relatively high on-resistance, suitable for low current applications
- Excellent thermal management and stable switching performance
- **Applications**:
- Battery-powered devices
- Low power power modules
- Switch mode power supplies (SMPS)
- Power control systems

Domain and module applications:

Applications and modules

1. **Battery-powered devices**: The SM2A18NSV-VB can be used in battery-powered systems, especially in low current and medium voltage applications. For example, it is suitable for portable devices (such as portable wireless devices, portable medical instruments, and mobile power supplies) as a power switch or battery protection switch to ensure stable and reliable power management of the device.

2. **Low-power power modules**: This MOSFET is suitable for low-power power modules, especially in application scenarios that require high voltage (up to 200V) but low current (1A). It can provide efficient switching control in power supply designs with light loads, and is suitable for LED drivers, low-power chargers, and power supplies for consumer electronics.

3. **Switching power supply (SMPS)**: The SM2A18NSV-VB is widely used in switching power supplies, especially in designs that require high voltage load and low power consumption. It can provide stable switching performance and effectively manage the switching process of the power supply, and perform efficient current control in medium voltage environments (such as for 12V or 24V power supply systems). Suitable for computer power supplies, battery chargers, LED power supplies and other small power conversion systems.

4. **Power control system**: SM2A18NSV-VB is suitable for switch or protection circuits in power control systems. Due to its high drain-source voltage and low power consumption characteristics, it can provide effective protection functions when controlling the switching state of the power circuit, especially in occasions requiring low current control and protection, such as low-power switching power supplies, fan control systems, etc.

5. **Signal switch and control circuit**: The switching characteristics of SM2A18NSV-VB make it suitable for various low-current signal switching circuits. For example, it can be used as a signal switch in instrumentation, automated test equipment and other low-current transmission applications to provide reliable control signal switching functions.

6. **Power protection circuit**: Due to its adaptability to high-voltage environments and small maximum leakage current, this MOSFET is suitable for power protection circuits. It can cut off or switch when an abnormality occurs in the power circuit to protect the circuit from overvoltage and overcurrent damage. It is often used in battery management systems, UPS systems and other occasions.

In summary, the SM2A18NSV-VB is suitable for a variety of low-power, low-current power switch applications. With its high voltage resistance, high on-resistance, and stable switching performance, it has important application value in battery-powered systems, power modules, and small switching power supply designs, especially for circuit systems that need to control high voltage and low current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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