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SM2692NSC-VB Product details
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1. Product Introduction
**SM2692NSC-VB** is a high-voltage unipolar N-Channel MOSFET in a SOT23-6 package. The maximum drain-source voltage (VDS) of this MOSFET is 200V, which is suitable for high-voltage power management, power conversion and other applications. The threshold voltage (Vth) of this model is 3V, which can start at a lower gate voltage and provide stable switching performance. Its on-resistance (RDS(ON)) is 200mΩ (at VGS=4.5V) and 160mΩ (at VGS=10V), respectively. Although the higher RDS(ON) limits its efficiency, it can still provide reliable performance in applications with lower current requirements. The maximum drain current (ID) of this MOSFET is 4A, which is suitable for medium-power switching applications, especially in systems that require higher voltage control.
**SM2692NSC-VB** is a high-voltage unipolar N-Channel MOSFET in a SOT23-6 package. The maximum drain-source voltage (VDS) of this MOSFET is 200V, which is suitable for high-voltage power management, power conversion and other applications. The threshold voltage (Vth) of this model is 3V, which can start at a lower gate voltage and provide stable switching performance. Its on-resistance (RDS(ON)) is 200mΩ (at VGS=4.5V) and 160mΩ (at VGS=10V), respectively. Although the higher RDS(ON) limits its efficiency, it can still provide reliable performance in applications with lower current requirements. The maximum drain current (ID) of this MOSFET is 4A, which is suitable for medium-power switching applications, especially in systems that require higher voltage control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 200V | 3V | 4A | 160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 200V | 3V | 4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 200V | 3V | 4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
2. Detailed parameter description
| **Parameter** | **Description** |
|--------------------|-----------------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 200V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 3V |
| **RDS(ON) (On-Resistance)** | 200mΩ (at VGS=4.5V), 160mΩ (at VGS=10V) |
| **ID (Drain Current)** | 4A |
| **Technology** | Trench |
- **Maximum drain-source voltage (VDS)**: The 200V rated voltage enables it to handle high voltage environments and is suitable for applications that need to withstand higher voltages, such as high-voltage power supplies, power amplifiers, etc.
- **Gate-source voltage (VGS)**: The maximum gate voltage is ±20V, ensuring that the MOSFET is compatible with a variety of standard control systems and has sufficient gate voltage control range.
- **Threshold voltage (Vth)**: The 3V threshold voltage means that the MOSFET can be turned on quickly at low gate voltages, suitable for low-power, high-response applications.
- **On-resistance (RDS(ON))**: At VGS=4.5V, the RDS(ON) of the N-channel MOSFET is 200mΩ, which drops to 160mΩ at VGS=10V. Although this RDS(ON) value is higher, it is suitable for applications with lower power and less stringent efficiency requirements.
- **Drain Current (ID)**: Maximum drain current is 4A, suitable for current switching applications with smaller power requirements.
| **Parameter** | **Description** |
|--------------------|-----------------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 200V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 3V |
| **RDS(ON) (On-Resistance)** | 200mΩ (at VGS=4.5V), 160mΩ (at VGS=10V) |
| **ID (Drain Current)** | 4A |
| **Technology** | Trench |
- **Maximum drain-source voltage (VDS)**: The 200V rated voltage enables it to handle high voltage environments and is suitable for applications that need to withstand higher voltages, such as high-voltage power supplies, power amplifiers, etc.
- **Gate-source voltage (VGS)**: The maximum gate voltage is ±20V, ensuring that the MOSFET is compatible with a variety of standard control systems and has sufficient gate voltage control range.
- **Threshold voltage (Vth)**: The 3V threshold voltage means that the MOSFET can be turned on quickly at low gate voltages, suitable for low-power, high-response applications.
- **On-resistance (RDS(ON))**: At VGS=4.5V, the RDS(ON) of the N-channel MOSFET is 200mΩ, which drops to 160mΩ at VGS=10V. Although this RDS(ON) value is higher, it is suitable for applications with lower power and less stringent efficiency requirements.
- **Drain Current (ID)**: Maximum drain current is 4A, suitable for current switching applications with smaller power requirements.
Domain and module applications：
3. Applications and modules
- **High-voltage DC-DC converter**: The SM2692NSC-VB performs well in high-voltage power systems, especially in DC-DC converters, which handle current conversion from high-voltage sources to low-voltage loads. Due to its high VDS rating (200V), it is able to perform efficient power conversion between high-voltage power sources and loads, and although its high on-resistance limits some applications, it is still suitable for medium-power applications.
- **Power management system**: This MOSFET can be used in power management modules, especially in high-power management systems that require current and voltage control. Its high-voltage tolerance gives it an advantage in high-voltage battery management and charging control, and can effectively control and monitor the battery charging and discharging process.
- **Power amplifier**: The SM2692NSC-VB is suitable for low-power power amplifier circuits, especially in applications where power efficiency is not too high. With a maximum drain current of 4A, it is suitable for signal amplification work that handles smaller power.
- **Industrial Automation and Control Systems**: In industrial automation and electric control systems, the SM2692NSC-VB can be used as a current switching element, especially in low-power drive control circuits. It can handle low-power device control and help improve the accuracy and stability of the system.
- **Automotive Power Management**: This MOSFET is also suitable for use in automotive power management systems, especially for modules such as battery management and power regulation. It can provide reliable switching control in high-voltage environments in automotive systems to ensure efficient operation of the system.
- **Overvoltage Protection Circuit**: Since the SM2692NSC-VB can withstand voltages up to 200V, it is suitable for use in overvoltage protection circuits to protect other sensitive components from overvoltage damage. It can disconnect the current flow in time when the voltage of the power system or equipment exceeds the safe range, thereby protecting the system safety.
- **Signal Switch and Current Control Applications**: This MOSFET can be used as a signal switch, especially in the signal path, to provide precise current control and reduce switching losses. It is suitable for signal processing modules that require medium power current, especially in the switching process of high-voltage control signals.
In summary, **SM2692NSC-VB** is a MOSFET suitable for medium power and high voltage applications. It is widely used in high-voltage DC-DC converters, power management, power protection, industrial control and automotive power management, and is particularly suitable for power systems and switch control circuits that require high voltage control.
- **High-voltage DC-DC converter**: The SM2692NSC-VB performs well in high-voltage power systems, especially in DC-DC converters, which handle current conversion from high-voltage sources to low-voltage loads. Due to its high VDS rating (200V), it is able to perform efficient power conversion between high-voltage power sources and loads, and although its high on-resistance limits some applications, it is still suitable for medium-power applications.
- **Power management system**: This MOSFET can be used in power management modules, especially in high-power management systems that require current and voltage control. Its high-voltage tolerance gives it an advantage in high-voltage battery management and charging control, and can effectively control and monitor the battery charging and discharging process.
- **Power amplifier**: The SM2692NSC-VB is suitable for low-power power amplifier circuits, especially in applications where power efficiency is not too high. With a maximum drain current of 4A, it is suitable for signal amplification work that handles smaller power.
- **Industrial Automation and Control Systems**: In industrial automation and electric control systems, the SM2692NSC-VB can be used as a current switching element, especially in low-power drive control circuits. It can handle low-power device control and help improve the accuracy and stability of the system.
- **Automotive Power Management**: This MOSFET is also suitable for use in automotive power management systems, especially for modules such as battery management and power regulation. It can provide reliable switching control in high-voltage environments in automotive systems to ensure efficient operation of the system.
- **Overvoltage Protection Circuit**: Since the SM2692NSC-VB can withstand voltages up to 200V, it is suitable for use in overvoltage protection circuits to protect other sensitive components from overvoltage damage. It can disconnect the current flow in time when the voltage of the power system or equipment exceeds the safe range, thereby protecting the system safety.
- **Signal Switch and Current Control Applications**: This MOSFET can be used as a signal switch, especially in the signal path, to provide precise current control and reduce switching losses. It is suitable for signal processing modules that require medium power current, especially in the switching process of high-voltage control signals.
In summary, **SM2692NSC-VB** is a MOSFET suitable for medium power and high voltage applications. It is widely used in high-voltage DC-DC converters, power management, power protection, industrial control and automotive power management, and is particularly suitable for power systems and switch control circuits that require high voltage control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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