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SM2670NSC-VB Product details
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SM2670NSC-VB is a high-performance N-Channel MOSFET in a SOT23-6 package, designed for low to medium power applications. With a maximum drain-source voltage (VDS) of 100V, this MOSFET can support a maximum drain current of 3.2A, making it suitable for a variety of low and medium voltage applications, especially circuits such as power management, battery control, and load switching. SM2670NSC-VB has a low on-resistance (95mΩ) at VGS = 10V, ensuring high efficiency and low power operation of the system. The use of Trench technology optimizes switching performance and reduces switching losses, making it particularly suitable for high-frequency and high-efficiency power conversion systems.
SM2670NSC-VB is a high-performance N-Channel MOSFET in a SOT23-6 package, designed for low to medium power applications. With a maximum drain-source voltage (VDS) of 100V, this MOSFET can support a maximum drain current of 3.2A, making it suitable for a variety of low and medium voltage applications, especially circuits such as power management, battery control, and load switching. SM2670NSC-VB has a low on-resistance (95mΩ) at VGS = 10V, ensuring high efficiency and low power operation of the system. The use of Trench technology optimizes switching performance and reduces switching losses, making it particularly suitable for high-frequency and high-efficiency power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | 95mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
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- **Package**: SOT23-6
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 105mΩ @ VGS = 4.5V
- 95mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 3.2A
- **Technology**: Trench technology (optimized switching performance, low conduction loss)
**Key features**:
- **Low on-resistance**: SM2670NSC-VB at VGS = 10V
- **High voltage tolerance**: Able to support a maximum drain-source voltage of 100V, suitable for high voltage control and medium and low power applications.
- **High current handling capability**: With a maximum drain current of 3.2A, it is suitable for power modules and switching circuits with high load current requirements.
- **High efficiency**: Trench technology optimizes the switching performance and conduction characteristics of MOSFET, reduces switching losses, and improves overall system efficiency.
- **Compact package**: The SOT23-6 package is very suitable for compact design applications, saving circuit board space and adapting to high integration requirements.
- **Package**: SOT23-6
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 105mΩ @ VGS = 4.5V
- 95mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 3.2A
- **Technology**: Trench technology (optimized switching performance, low conduction loss)
**Key features**:
- **Low on-resistance**: SM2670NSC-VB at VGS = 10V
- **High voltage tolerance**: Able to support a maximum drain-source voltage of 100V, suitable for high voltage control and medium and low power applications.
- **High current handling capability**: With a maximum drain current of 3.2A, it is suitable for power modules and switching circuits with high load current requirements.
- **High efficiency**: Trench technology optimizes the switching performance and conduction characteristics of MOSFET, reduces switching losses, and improves overall system efficiency.
- **Compact package**: The SOT23-6 package is very suitable for compact design applications, saving circuit board space and adapting to high integration requirements.
Domain and module applications：
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1. **DC-DC Converter**
- In low to medium power DC-DC converters, the SM2670NSC-VB can be used as a switching element to improve system efficiency and reduce energy loss through its low on-resistance and high current handling capability. It is particularly suitable for boost and buck converters, as well as other power conversion systems.
2. **Battery Management System (BMS)**
- The SM2670NSC-VB can be used in battery management systems for efficient battery charge and discharge control, especially in application scenarios that require high voltage and high current control. Its high current handling capability enables it to handle larger current charging and discharging requirements, ensuring stable operation of the battery.
3. **Load Switch Control**
- In load switch control circuits, the SM2670NSC-VB provides precise current control and can effectively manage the switching operation of the load. Due to its low RDS(ON) and high current capability, it is very suitable for load switching in power modules, battery systems, and home appliances.
4. **Power Management and Power Regulation**
- This MOSFET is widely used in power management circuits such as power adapters and power regulation modules. Its low on-resistance and high switching performance make it very suitable for power management applications that require high efficiency and low power consumption.
5. **Portable Electronic Devices**
- In the power management circuits of portable electronic devices such as smartphones and tablets, the SM2670NSC-VB can be used for battery management and power regulation to meet the needs of high voltage and high efficiency. Its small package and high efficiency make it an ideal choice for compact circuit boards.
6. **LED Driver and Lighting Control**
- The SM2670NSC-VB is also suitable for LED driver and lighting control applications, achieving precise LED power control through efficient current control regulation to ensure system stability and energy saving.
7. **Power Tools and Home Appliances**
- In power tools and home appliances power management, SM2670NSC-VB can be used for power switching and load switching, especially in high current and low power loss environments, to ensure stable operation and extend the service life of the equipment.
SM2670NSC-VB is a low-power, high-efficiency N-Channel MOSFET suitable for various types of high-efficiency power management, battery control and load switching circuits. Its low on-resistance, high current capability and small package make it an ideal choice for modern portable electronic devices, DC-DC converters, and power management systems.
1. **DC-DC Converter**
- In low to medium power DC-DC converters, the SM2670NSC-VB can be used as a switching element to improve system efficiency and reduce energy loss through its low on-resistance and high current handling capability. It is particularly suitable for boost and buck converters, as well as other power conversion systems.
2. **Battery Management System (BMS)**
- The SM2670NSC-VB can be used in battery management systems for efficient battery charge and discharge control, especially in application scenarios that require high voltage and high current control. Its high current handling capability enables it to handle larger current charging and discharging requirements, ensuring stable operation of the battery.
3. **Load Switch Control**
- In load switch control circuits, the SM2670NSC-VB provides precise current control and can effectively manage the switching operation of the load. Due to its low RDS(ON) and high current capability, it is very suitable for load switching in power modules, battery systems, and home appliances.
4. **Power Management and Power Regulation**
- This MOSFET is widely used in power management circuits such as power adapters and power regulation modules. Its low on-resistance and high switching performance make it very suitable for power management applications that require high efficiency and low power consumption.
5. **Portable Electronic Devices**
- In the power management circuits of portable electronic devices such as smartphones and tablets, the SM2670NSC-VB can be used for battery management and power regulation to meet the needs of high voltage and high efficiency. Its small package and high efficiency make it an ideal choice for compact circuit boards.
6. **LED Driver and Lighting Control**
- The SM2670NSC-VB is also suitable for LED driver and lighting control applications, achieving precise LED power control through efficient current control regulation to ensure system stability and energy saving.
7. **Power Tools and Home Appliances**
- In power tools and home appliances power management, SM2670NSC-VB can be used for power switching and load switching, especially in high current and low power loss environments, to ensure stable operation and extend the service life of the equipment.
SM2670NSC-VB is a low-power, high-efficiency N-Channel MOSFET suitable for various types of high-efficiency power management, battery control and load switching circuits. Its low on-resistance, high current capability and small package make it an ideal choice for modern portable electronic devices, DC-DC converters, and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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