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SM2607CSC-VB Product details
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1. Product Introduction
**SM2607CSC-VB** is a bipolar N+P channel MOSFET in SOT23-6 package, suitable for low voltage bidirectional switch control applications. The maximum drain-source voltage (VDS) of this type of MOSFET is ±20V, which is suitable for bipolar control circuits and low power electronic applications. Its threshold voltage (Vth) is 1.0V (N channel) and -1.2V (P channel), which enables the device to operate reliably at lower gate voltages. Its on-resistance (RDS(ON)) is 30mΩ (at VGS=4.5V) for N channel and 79mΩ (at VGS=4.5V) for P channel, respectively, and 22mΩ and 55mΩ at VGS=10V, respectively, which indicates that this MOSFET has low conduction loss and is suitable for high-efficiency switching applications. The maximum drain current (ID) is 5.5A (N channel) and 3.4A (P channel) respectively. This MOSFET adopts Trench technology, has excellent switching performance and low power consumption, and is widely used in power supply, signal processing and other fields that require bipolar switch control.
**SM2607CSC-VB** is a bipolar N+P channel MOSFET in SOT23-6 package, suitable for low voltage bidirectional switch control applications. The maximum drain-source voltage (VDS) of this type of MOSFET is ±20V, which is suitable for bipolar control circuits and low power electronic applications. Its threshold voltage (Vth) is 1.0V (N channel) and -1.2V (P channel), which enables the device to operate reliably at lower gate voltages. Its on-resistance (RDS(ON)) is 30mΩ (at VGS=4.5V) for N channel and 79mΩ (at VGS=4.5V) for P channel, respectively, and 22mΩ and 55mΩ at VGS=10V, respectively, which indicates that this MOSFET has low conduction loss and is suitable for high-efficiency switching applications. The maximum drain current (ID) is 5.5A (N channel) and 3.4A (P channel) respectively. This MOSFET adopts Trench technology, has excellent switching performance and low power consumption, and is widely used in power supply, signal processing and other fields that require bipolar switch control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 22/55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
2. Detailed parameter description
| **Parameter** | **Description** |
|------------------|----------------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Bipolar N+P channel|
| **VDS (Drain-Source Voltage)** | ±20V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | N channel: 1.0V; P channel: -1.2V |
| **RDS(ON) (On-Resistance)** | N channel: 30mΩ (at VGS=4.5V), 22mΩ (at VGS=10V) |
| **RDS(ON) (On-Resistance)** | P channel: 79mΩ (at VGS=4.5V), 55mΩ (at VGS=10V) |
| **ID (Drain Current)** | N-channel: 5.5A; P-channel: 3.4A |
| **Technology** | Trench |
- **Maximum Drain-Source Voltage (VDS)**: The ±20V rated voltage makes this MOSFET suitable for circuits requiring bipolar voltage control, supporting positive and negative voltage operation, and is widely used in battery-powered systems and bidirectional current control applications.
- **Gate-Source Voltage (VGS)**: The maximum gate voltage is ±20V, which enables this MOSFET to adapt to a wider gate drive voltage and is compatible with a variety of control systems.
- **Threshold Voltage (Vth)**: The threshold voltage of the N-channel is 1.0V, while the threshold voltage of the P-channel is -1.2V, which can reliably switch under low voltage conditions, suitable for low-power, high-efficiency applications.
- **On-resistance (RDS(ON))**: At VGS=4.5V, the N-channel RDS(ON) is 30mΩ and the P-channel RDS(ON) is 79mΩ; at VGS=10V, the N-channel RDS(ON) drops to 22mΩ and the P-channel is 55mΩ. Low RDS(ON) ensures efficient power conversion and low power consumption.
- **Drain current (ID)**: The maximum drain current of the N-channel is 5.5A and that of the P-channel is 3.4A, which can handle current loads of moderate power and is suitable for medium-power control circuits.
| **Parameter** | **Description** |
|------------------|----------------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Bipolar N+P channel|
| **VDS (Drain-Source Voltage)** | ±20V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | N channel: 1.0V; P channel: -1.2V |
| **RDS(ON) (On-Resistance)** | N channel: 30mΩ (at VGS=4.5V), 22mΩ (at VGS=10V) |
| **RDS(ON) (On-Resistance)** | P channel: 79mΩ (at VGS=4.5V), 55mΩ (at VGS=10V) |
| **ID (Drain Current)** | N-channel: 5.5A; P-channel: 3.4A |
| **Technology** | Trench |
- **Maximum Drain-Source Voltage (VDS)**: The ±20V rated voltage makes this MOSFET suitable for circuits requiring bipolar voltage control, supporting positive and negative voltage operation, and is widely used in battery-powered systems and bidirectional current control applications.
- **Gate-Source Voltage (VGS)**: The maximum gate voltage is ±20V, which enables this MOSFET to adapt to a wider gate drive voltage and is compatible with a variety of control systems.
- **Threshold Voltage (Vth)**: The threshold voltage of the N-channel is 1.0V, while the threshold voltage of the P-channel is -1.2V, which can reliably switch under low voltage conditions, suitable for low-power, high-efficiency applications.
- **On-resistance (RDS(ON))**: At VGS=4.5V, the N-channel RDS(ON) is 30mΩ and the P-channel RDS(ON) is 79mΩ; at VGS=10V, the N-channel RDS(ON) drops to 22mΩ and the P-channel is 55mΩ. Low RDS(ON) ensures efficient power conversion and low power consumption.
- **Drain current (ID)**: The maximum drain current of the N-channel is 5.5A and that of the P-channel is 3.4A, which can handle current loads of moderate power and is suitable for medium-power control circuits.
Domain and module applications：
3. Application fields and modules
- **Bipolar DC-DC converter**: The dual-channel configuration of SM2607CSC-VB makes it particularly suitable for bipolar DC-DC converters. This MOSFET can realize positive and negative voltage conversion and switch quickly under low voltage drive, thereby improving conversion efficiency. It has a wide range of applications in mobile devices, consumer electronics, and battery-powered devices.
- **Battery management and protection circuits**: Due to its low RDS(ON) and low threshold voltage, SM2607CSC-VB is suitable for battery management and battery protection circuits, especially in applications requiring bipolar switch control. For example, in battery chargers and battery overcharge protection circuits, the charging process can be effectively controlled to avoid battery damage.
- **Power tools and home appliances**: This MOSFET can be used in low-power power tools and home appliances, especially in bidirectional switch control circuits, which can control the current flow and achieve high-efficiency power conversion. The low on-resistance of this MOSFET helps reduce the loss when current passes through and improve efficiency.
- **Motor drive system**: The bipolar N+P channel characteristics of the SM2607CSC-VB make it very suitable for use in motor drive systems, especially DC motor drives that require bidirectional current control. It can accurately control the direction and speed of the motor and is widely used in robots, power tools and other electric equipment.
- **Power factor correction (PFC)**: The high efficiency and low on-resistance of this MOSFET make it an ideal choice for power factor correction circuits. It can significantly reduce switching losses, help the system improve the power factor, and reduce wasted energy.
- **Load switch and protection circuit**: The SM2607CSC-VB is also widely used in load switching and overload protection circuits. It can accurately control the load through positive and negative voltage switches, provide over-current and over-voltage protection, and ensure stable circuit operation.
- **Signal switch and audio amplifier**: In the signal switch and audio amplifier circuit, the bipolar switching characteristics of SM2607CSC-VB allow it to efficiently control the signal path, reduce signal loss, and provide clearer audio output.
In summary, **SM2607CSC-VB** is a high-efficiency MOSFET with bipolar switching function, which is widely used in bipolar DC-DC conversion, battery management, power tools, motor drive and load protection. It is particularly suitable for circuit systems with low power consumption, high efficiency and requiring bidirectional voltage control.
- **Bipolar DC-DC converter**: The dual-channel configuration of SM2607CSC-VB makes it particularly suitable for bipolar DC-DC converters. This MOSFET can realize positive and negative voltage conversion and switch quickly under low voltage drive, thereby improving conversion efficiency. It has a wide range of applications in mobile devices, consumer electronics, and battery-powered devices.
- **Battery management and protection circuits**: Due to its low RDS(ON) and low threshold voltage, SM2607CSC-VB is suitable for battery management and battery protection circuits, especially in applications requiring bipolar switch control. For example, in battery chargers and battery overcharge protection circuits, the charging process can be effectively controlled to avoid battery damage.
- **Power tools and home appliances**: This MOSFET can be used in low-power power tools and home appliances, especially in bidirectional switch control circuits, which can control the current flow and achieve high-efficiency power conversion. The low on-resistance of this MOSFET helps reduce the loss when current passes through and improve efficiency.
- **Motor drive system**: The bipolar N+P channel characteristics of the SM2607CSC-VB make it very suitable for use in motor drive systems, especially DC motor drives that require bidirectional current control. It can accurately control the direction and speed of the motor and is widely used in robots, power tools and other electric equipment.
- **Power factor correction (PFC)**: The high efficiency and low on-resistance of this MOSFET make it an ideal choice for power factor correction circuits. It can significantly reduce switching losses, help the system improve the power factor, and reduce wasted energy.
- **Load switch and protection circuit**: The SM2607CSC-VB is also widely used in load switching and overload protection circuits. It can accurately control the load through positive and negative voltage switches, provide over-current and over-voltage protection, and ensure stable circuit operation.
- **Signal switch and audio amplifier**: In the signal switch and audio amplifier circuit, the bipolar switching characteristics of SM2607CSC-VB allow it to efficiently control the signal path, reduce signal loss, and provide clearer audio output.
In summary, **SM2607CSC-VB** is a high-efficiency MOSFET with bipolar switching function, which is widely used in bipolar DC-DC conversion, battery management, power tools, motor drive and load protection. It is particularly suitable for circuit systems with low power consumption, high efficiency and requiring bidirectional voltage control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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