中文
English
SM2601PSC-VB Product details
Back to previous pageProduct introduction：
**
The SM2601PSC-VB is a high-performance P-Channel MOSFET in a SOT23-6 package, designed for low-voltage, high-efficiency applications. The device has a maximum drain-source voltage of -30V and can support a drain current of -4.8A, making it suitable for power management and load switching applications that require negative voltage control. The SM2601PSC-VB has a low on-resistance of 49mΩ at VGS = 10V, ensuring that the system maintains high efficiency under high current and low power loss operating conditions. This MOSFET uses Trench technology to optimize switching performance and reduce switching losses, making it particularly suitable for high-frequency and high-efficiency power conversion applications.
---
**SM2601PSC-VB MOSFET
The SM2601PSC-VB is a high-performance P-Channel MOSFET in a SOT23-6 package, designed for low-voltage, high-efficiency applications. The device has a maximum drain-source voltage of -30V and can support a drain current of -4.8A, making it suitable for power management and load switching applications that require negative voltage control. The SM2601PSC-VB has a low on-resistance of 49mΩ at VGS = 10V, ensuring that the system maintains high efficiency under high current and low power loss operating conditions. This MOSFET uses Trench technology to optimize switching performance and reduce switching losses, making it particularly suitable for high-frequency and high-efficiency power conversion applications.
---
**SM2601PSC-VB MOSFET
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
**
- **Package**: SOT23-6
- **Configuration**: Single P-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology (optimized switching performance, low conduction loss)
**Key Features**:
- **Low on-resistance**: SM2601PSC-VB offers low on-resistance, especially at VGS = 10V, RDS(ON) 49mΩ, effectively reducing system power loss.
- **Negative voltage control**: Suitable for negative voltage control applications, can withstand a maximum drain-source voltage of -30V, meeting negative current switching requirements.
- **High efficiency**: Adopting Trench technology, it optimizes switching speed and conduction performance, and can reduce switching losses in high-frequency and high-efficiency power supplies.
- **Small package**: The SOT23-6 package size is small, which is very suitable for compact circuit boards and mobile devices.
---
**SM2601PSC-VB MOSFET
- **Package**: SOT23-6
- **Configuration**: Single P-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology (optimized switching performance, low conduction loss)
**Key Features**:
- **Low on-resistance**: SM2601PSC-VB offers low on-resistance, especially at VGS = 10V, RDS(ON) 49mΩ, effectively reducing system power loss.
- **Negative voltage control**: Suitable for negative voltage control applications, can withstand a maximum drain-source voltage of -30V, meeting negative current switching requirements.
- **High efficiency**: Adopting Trench technology, it optimizes switching speed and conduction performance, and can reduce switching losses in high-frequency and high-efficiency power supplies.
- **Small package**: The SOT23-6 package size is small, which is very suitable for compact circuit boards and mobile devices.
---
**SM2601PSC-VB MOSFET
Domain and module applications：
**
1. **DC-DC Converter**
- In low voltage and high frequency DC-DC converters, the low on-resistance and high switching speed of the SM2601PSC-VB MOSFET enable it to efficiently convert power and improve efficiency. It is especially suitable for buck converters, which can provide stable current output at lower voltages.
2. **Battery Management System (BMS)**
- In battery management systems, the SM2601PSC-VB can be used for battery charge/discharge control, especially in environments where negative voltage switching is required. Its high current carrying capacity (maximum drain current -4.8A) enables it to efficiently control the battery charge and discharge process, ensuring long-term stable operation of the battery.
3. **Load Switch Control**
- The SM2601PSC-VB is suitable for load switch control, especially in load switch applications that require negative voltage drive. Its low RDS(ON) and high current handling capability are very suitable for use in power modules, battery systems, and load switchers to ensure stable and efficient operation of the equipment.
4. **Load Regulation and Power Management**
- This MOSFET is widely used in load regulation and power management circuits, especially in high-efficiency systems requiring low losses. The SM2601PSC-VB provides precise load current control with its low RDS(ON) characteristics and small package.
5. **Portable Electronic Devices**
- In the power management circuits of smartphones, tablets and other portable electronic devices, the SM2601PSC-VB can be used for battery management and power regulation to adapt to various negative voltage working environments. Its high efficiency and small package make it an ideal choice for these compact circuit boards.
6. **Power Amplifier and Audio Applications**
- The SM2601PSC-VB is also suitable for power control of power amplifiers and audio equipment. Its high efficiency and low on-resistance ensure that power losses are reduced in audio signal processing and the overall performance of the device is improved.
7. **Power Tools and Appliances**
- In power tools and appliances, the SM2601PSC-VB can be used for power management and load switching control. It can handle relatively high currents and keep heat low, ensuring long-term stable operation of the equipment.
The SM2601PSC-VB is a high-efficiency P-Channel MOSFET that is widely used in low-voltage control, high-efficiency power conversion, and load switch control. Its low on-resistance, high switching speed, and small package make it very suitable for modern portable devices and efficient power management systems.
1. **DC-DC Converter**
- In low voltage and high frequency DC-DC converters, the low on-resistance and high switching speed of the SM2601PSC-VB MOSFET enable it to efficiently convert power and improve efficiency. It is especially suitable for buck converters, which can provide stable current output at lower voltages.
2. **Battery Management System (BMS)**
- In battery management systems, the SM2601PSC-VB can be used for battery charge/discharge control, especially in environments where negative voltage switching is required. Its high current carrying capacity (maximum drain current -4.8A) enables it to efficiently control the battery charge and discharge process, ensuring long-term stable operation of the battery.
3. **Load Switch Control**
- The SM2601PSC-VB is suitable for load switch control, especially in load switch applications that require negative voltage drive. Its low RDS(ON) and high current handling capability are very suitable for use in power modules, battery systems, and load switchers to ensure stable and efficient operation of the equipment.
4. **Load Regulation and Power Management**
- This MOSFET is widely used in load regulation and power management circuits, especially in high-efficiency systems requiring low losses. The SM2601PSC-VB provides precise load current control with its low RDS(ON) characteristics and small package.
5. **Portable Electronic Devices**
- In the power management circuits of smartphones, tablets and other portable electronic devices, the SM2601PSC-VB can be used for battery management and power regulation to adapt to various negative voltage working environments. Its high efficiency and small package make it an ideal choice for these compact circuit boards.
6. **Power Amplifier and Audio Applications**
- The SM2601PSC-VB is also suitable for power control of power amplifiers and audio equipment. Its high efficiency and low on-resistance ensure that power losses are reduced in audio signal processing and the overall performance of the device is improved.
7. **Power Tools and Appliances**
- In power tools and appliances, the SM2601PSC-VB can be used for power management and load switching control. It can handle relatively high currents and keep heat low, ensuring long-term stable operation of the equipment.
The SM2601PSC-VB is a high-efficiency P-Channel MOSFET that is widely used in low-voltage control, high-efficiency power conversion, and load switch control. Its low on-resistance, high switching speed, and small package make it very suitable for modern portable devices and efficient power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
