Product introduction：
**
SM2221CSQG-VB is a bipolar N+P MOSFET in DFN6(2X2)-B package, designed for low voltage, high efficiency applications. The device has symmetrical N-Channel and P-Channel MOSFET structures, supports ±30V drain-source voltage (VDS), and maintains low on-resistance at low gate voltage. Its on-resistance (RDS(ON)) is 24mΩ (N-Channel) and 40mΩ (P-Channel) @ VGS=4.5V, 18mΩ (N-Channel) and 32mΩ (P-Channel) @ VGS=10V, respectively, ensuring high efficiency and low power loss. The maximum drain current (ID) is ±7A, suitable for current switching and control applications in efficient power management and small electronic devices. SM2221CSQG-VB adopts Trench technology and has excellent switching performance, which is very suitable for high-efficiency power supply, load switching and miniaturized systems.
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**SM2221CSQG-VB MOSFET
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
|
18/32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
|
|
**
- **Package**: DFN6(2X2)-B
- **Configuration**: Dual N+P-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-Channel: 1.6V
- P-Channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-Channel: 24mΩ @ VGS = 4.5V, 18mΩ @ VGS = 10V
- P-Channel: 40mΩ @ VGS = 4.5V, 32mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: ±7A
- **Technology**: Trench Technology (optimized switching performance, low conduction loss)
**Key Features**:
- **Dual MOSFET structure**: It has both N-Channel and P-Channel MOSFETs, which is suitable for bidirectional current control and load switching, simplifying circuit design.
- **Low on-resistance**: It provides very low on-resistance (N-Channel 18mΩ, P-Channel 32mΩ @ VGS = 10V) to ensure high efficiency and reduce energy loss.
- **High current handling capability**: It can handle a maximum leakage current of ±7A, suitable for low and medium power applications.
- **Small package**: The DFN6(2X2)-B package is small in size, suitable for compact circuit boards and mobile devices.
- **Trench technology**: It uses Trench technology to provide higher switching speed and lower switching loss.
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**SM2221CSQG-VB MOSFET
Domain and module applications：
**
1. **Low Power DC-DC Converters**
- The SM2221CSQG-VB provides efficient power conversion in low power DC-DC converters, especially in portable devices that require high performance and low power consumption. The dual MOSFET structure allows bidirectional control of current flow within a single chip, making it suitable for boost/buck converters.
2. **Battery Powered Systems**
- In battery management systems (BMS), the SM2221CSQG-VB acts as a load switch controller to effectively manage the charging and discharging process of the battery. The dual MOSFET structure can be used for more efficient current switching while adapting to a variety of battery voltages to ensure system stability and efficiency.
3. **Power Management Modules**
- Due to its low RDS(ON) characteristics, the SM2221CSQG-VB is suitable for high-performance power management modules, which can effectively control the flow of current and reduce power losses. This is critical in power adapters, power supplies, and various high-performance power modules.
4. **Small Portable Devices**
- In small portable devices such as smartphones and tablets, the SM2221CSQG-VB's compact package and high current handling capability make it ideal for battery management, power regulation, and current switching circuits.
5. **Load Switch Control**
- In load switch control applications, the SM2221CSQG-VB can be used as an efficient switching element to achieve precise control and switching of load current through the integration of bipolar MOSFETs. It is widely used in home appliances, automotive electronics and other equipment.
6. **Audio Amplifier Power Management**
- This MOSFET is also suitable for power management of audio amplifiers, capable of operating efficiently at high frequencies, and reducing heat generation and energy loss through low on-resistance, improving the overall performance of the system.
SM2221CSQG-VB is a bipolar MOSFET with high performance and low power consumption. It is widely used in battery-powered devices, DC-DC conversion, power management, portable electronic devices and various high-performance switching power supply fields. It can meet the stringent requirements of modern electronic devices for miniaturization, high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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