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SM2054NSV-VB Product details
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1. Product Introduction
**SM2054NSV-VB** is a high-efficiency N-Channel MOSFET in SOT223 package, suitable for low-voltage applications. This type of MOSFET has a maximum drain-source voltage (VDS) of 30V, which can meet the needs of low-power and medium-power power supply control. Its threshold voltage (Vth) is 1.7V, which can be turned on under low-voltage drive, and is suitable for use in low-voltage working environments. This MOSFET is manufactured using Trench technology and has extremely low on-resistance (RDS(ON)), which is 19mΩ (at VGS=10V) and 21mΩ (at VGS=4.5V), which effectively reduces switching loss and conduction loss. The maximum drain current (ID) can reach 7A, which is suitable for applications with medium current but high switching efficiency.
**SM2054NSV-VB** is a high-efficiency N-Channel MOSFET in SOT223 package, suitable for low-voltage applications. This type of MOSFET has a maximum drain-source voltage (VDS) of 30V, which can meet the needs of low-power and medium-power power supply control. Its threshold voltage (Vth) is 1.7V, which can be turned on under low-voltage drive, and is suitable for use in low-voltage working environments. This MOSFET is manufactured using Trench technology and has extremely low on-resistance (RDS(ON)), which is 19mΩ (at VGS=10V) and 21mΩ (at VGS=4.5V), which effectively reduces switching loss and conduction loss. The maximum drain current (ID) can reach 7A, which is suitable for applications with medium current but high switching efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. Detailed parameter description
| **Parameter** | **Description** |
|------------------|----------------------------------------------------|
| **Package** | SOT223 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 30V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 1.7V |
| **RDS(ON) (On-Resistance)** | 21mΩ (at VGS=4.5V), 19mΩ (at VGS=10V) |
| **ID (Drain Current)** | 7A |
| **Technology** | Trench |
- **Maximum drain-source voltage (VDS)**: The rated voltage of 30V makes this MOSFET suitable for current control of low-voltage power supplies and loads, and can withstand a maximum voltage difference of 30V.
- **Gate-source voltage (VGS)**: The maximum gate voltage is ±20V, which ensures a wide range of drive compatibility and is suitable for systems driven by low-power signals.
- **Threshold voltage (Vth)**: The low threshold voltage of 1.7V enables this MOSFET to be turned on at a lower gate voltage, further improving the startup efficiency of the system.
- **On-resistance (RDS(ON))**: At VGS=10V, RDS(ON) is 19mΩ. The low on-resistance can significantly reduce conduction losses and is suitable for power conversion systems that require high efficiency.
- **Drain current (ID)**: The maximum drain current is 7A, which enables this MOSFET to handle medium current loads and is suitable for power supply and power control applications.
| **Parameter** | **Description** |
|------------------|----------------------------------------------------|
| **Package** | SOT223 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 30V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 1.7V |
| **RDS(ON) (On-Resistance)** | 21mΩ (at VGS=4.5V), 19mΩ (at VGS=10V) |
| **ID (Drain Current)** | 7A |
| **Technology** | Trench |
- **Maximum drain-source voltage (VDS)**: The rated voltage of 30V makes this MOSFET suitable for current control of low-voltage power supplies and loads, and can withstand a maximum voltage difference of 30V.
- **Gate-source voltage (VGS)**: The maximum gate voltage is ±20V, which ensures a wide range of drive compatibility and is suitable for systems driven by low-power signals.
- **Threshold voltage (Vth)**: The low threshold voltage of 1.7V enables this MOSFET to be turned on at a lower gate voltage, further improving the startup efficiency of the system.
- **On-resistance (RDS(ON))**: At VGS=10V, RDS(ON) is 19mΩ. The low on-resistance can significantly reduce conduction losses and is suitable for power conversion systems that require high efficiency.
- **Drain current (ID)**: The maximum drain current is 7A, which enables this MOSFET to handle medium current loads and is suitable for power supply and power control applications.
Domain and module applications：
3. Application fields and modules
- **Power management and DC-DC converters**: The low on-resistance and low Vth of the SM2054NSV-VB make it ideal for use in power management modules such as DC-DC converters and power regulators. In these applications, it can effectively control the current flow and improve the overall conversion efficiency and reduce the heat loss of the system.
- **Charger and battery management**: This MOSFET is suitable for battery chargers and battery management systems, especially for fast switching charging processes. In these systems, it can operate reliably at low gate drive voltages, provide efficient current control, and ensure that the battery is charged quickly and safely.
- **Low-voltage motor drivers**: The low Vth and high current capability of the SM2054NSV-VB make it an ideal choice for low-voltage motor drive systems. It can efficiently control the start, stop and speed regulation of motors in equipment such as power tools, home appliances and small electric vehicles.
- **Power Factor Correction (PFC)**: Due to its low RDS(ON) characteristics, this MOSFET also provides efficient switching performance in power factor correction circuits. It helps the system improve the power factor, reduce wasted energy, and improve the overall efficiency of power equipment.
- **Audio Amplifier and High-Frequency Switching Applications**: The SM2054NSV-VB has a low on-resistance and is suitable for use in audio amplifiers and other high-frequency power switching circuits. These circuits require high efficiency and low losses, and this MOSFET can meet these needs.
- **Low-Power LED Driver**: This MOSFET can be used in low-power LED driver circuits, where the SM2054NSV-VB can accurately control the current of the LED, thereby extending the life of the LED and improving efficiency.
- **Consumer Electronics and Communication Equipment**: The SM2054NSV-VB provides an ideal solution for power management in mobile phones, tablets, and small communication devices. Its high efficiency, low power consumption characteristics, and small package are well suited for these space-constrained applications that require high efficiency.
In summary, **SM2054NSV-VB** is a MOSFET that is very suitable for low-power, high-efficiency power management and control systems. It is widely used in power conversion, chargers, LED drivers, motor control and other fields requiring low voltage, high-efficiency switching.
- **Power management and DC-DC converters**: The low on-resistance and low Vth of the SM2054NSV-VB make it ideal for use in power management modules such as DC-DC converters and power regulators. In these applications, it can effectively control the current flow and improve the overall conversion efficiency and reduce the heat loss of the system.
- **Charger and battery management**: This MOSFET is suitable for battery chargers and battery management systems, especially for fast switching charging processes. In these systems, it can operate reliably at low gate drive voltages, provide efficient current control, and ensure that the battery is charged quickly and safely.
- **Low-voltage motor drivers**: The low Vth and high current capability of the SM2054NSV-VB make it an ideal choice for low-voltage motor drive systems. It can efficiently control the start, stop and speed regulation of motors in equipment such as power tools, home appliances and small electric vehicles.
- **Power Factor Correction (PFC)**: Due to its low RDS(ON) characteristics, this MOSFET also provides efficient switching performance in power factor correction circuits. It helps the system improve the power factor, reduce wasted energy, and improve the overall efficiency of power equipment.
- **Audio Amplifier and High-Frequency Switching Applications**: The SM2054NSV-VB has a low on-resistance and is suitable for use in audio amplifiers and other high-frequency power switching circuits. These circuits require high efficiency and low losses, and this MOSFET can meet these needs.
- **Low-Power LED Driver**: This MOSFET can be used in low-power LED driver circuits, where the SM2054NSV-VB can accurately control the current of the LED, thereby extending the life of the LED and improving efficiency.
- **Consumer Electronics and Communication Equipment**: The SM2054NSV-VB provides an ideal solution for power management in mobile phones, tablets, and small communication devices. Its high efficiency, low power consumption characteristics, and small package are well suited for these space-constrained applications that require high efficiency.
In summary, **SM2054NSV-VB** is a MOSFET that is very suitable for low-power, high-efficiency power management and control systems. It is widely used in power conversion, chargers, LED drivers, motor control and other fields requiring low voltage, high-efficiency switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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