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SM2030NSU-VB Product details
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SM2030NSU-VB MOSFET Product Introduction
SM2030NSU-VB is a unipolar N-channel MOSFET using Trench technology, packaged in TO252, with excellent current handling capability and low on-resistance. Its maximum drain-source voltage (VDS) is 20V, suitable for low-voltage high-power applications. The gate-source voltage (VGS) of this MOSFET is ±20V, supporting a wide gate drive range. Its threshold voltage (Vth) is between 0.5V and 1.5V, which can ensure that it starts to conduct at low voltage, further improving system efficiency.
The on-resistance (RDS(ON)) of SM2030NSU-VB is 4.5mΩ at VGS = 4.5V and 6mΩ at VGS = 2.5V, which means that it can maintain very low power loss even under low voltage drive, suitable for high-frequency, high-efficiency power supply applications. The MOSFET also features a very high maximum drain current (ID) of 100A, capable of handling high current loads and suitable for applications with high power density and fast response.
SM2030NSU-VB is a unipolar N-channel MOSFET using Trench technology, packaged in TO252, with excellent current handling capability and low on-resistance. Its maximum drain-source voltage (VDS) is 20V, suitable for low-voltage high-power applications. The gate-source voltage (VGS) of this MOSFET is ±20V, supporting a wide gate drive range. Its threshold voltage (Vth) is between 0.5V and 1.5V, which can ensure that it starts to conduct at low voltage, further improving system efficiency.
The on-resistance (RDS(ON)) of SM2030NSU-VB is 4.5mΩ at VGS = 4.5V and 6mΩ at VGS = 2.5V, which means that it can maintain very low power loss even under low voltage drive, suitable for high-frequency, high-efficiency power supply applications. The MOSFET also features a very high maximum drain current (ID) of 100A, capable of handling high current loads and suitable for applications with high power density and fast response.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SM2030NSU-VB MOSFET Detailed parameter description
- **Model**: SM2030NSU-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Maximum power dissipation**: Depends on heat dissipation conditions, refer to the data sheet for specific power parameters
- **Switching characteristics**: Fast switching response, suitable for high frequency applications
- **Operating temperature range**: Typically -40°C to +150°C (depending on product specifications)
- **Model**: SM2030NSU-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Maximum power dissipation**: Depends on heat dissipation conditions, refer to the data sheet for specific power parameters
- **Switching characteristics**: Fast switching response, suitable for high frequency applications
- **Operating temperature range**: Typically -40°C to +150°C (depending on product specifications)
Domain and module applications：
SM2030NSU-VB application areas and module examples
1. **Power management and efficient power conversion**:
Due to its low RDS(ON) characteristics, the SM2030NSU-VB is very suitable for high-efficiency power conversion applications, such as in DC-DC converters and switching power supplies (SMPS). It can operate efficiently at low voltages and withstand large current loads (up to 100A), making it suitable for power supply designs that require low losses and high efficiency.
2. **Battery Management System (BMS)**:
In battery management systems, especially for battery packs with a voltage of 20V or less, the SM2030NSU-VB can be used for battery switching control and current regulation. Its low threshold voltage and high current capability make it an ideal choice for battery charge and discharge control, which can improve system efficiency and extend battery life.
3. **Power Tools and Consumer Electronics**:
In power management for power tools and other consumer electronics, the SM2030NSU-VB can be used to drive motors and control power modules. Its high current capability and low power loss characteristics are suitable for applications that require fast response and low voltage operation, providing stable power support and reducing heat generation.
4. **Power Amplifiers and Radio Frequency (RF) Circuits**:
In the field of RF and communications, the SM2030NSU-VB can be used as a switching element for power amplifiers, especially in applications that require low voltage drive and high current requirements. Its fast switching speed and low on-resistance make it an excellent performer in RF circuits, which can improve system efficiency and reduce transmission losses.
5. **Automotive Electronic Control Systems**:
This MOSFET is also suitable for automotive electronic systems, especially in scenarios with low battery voltages, such as battery management systems, DC-DC conversion modules, and battery charging control modules for electric vehicles. Its high current capability and low RDS(ON) provide better efficiency and lower heat loss, making it ideal for automotive electronic control systems.
6. **Electric Drive and Robotics**:
In industrial automation and robotics, the SM2030NSU-VB can be used as an efficient motor drive switch. Its high current carrying capacity and fast switching characteristics enable smooth control when driving high-power motors, and maintain low losses at high-frequency operations.
Overall, the SM2030NSU-VB is a high-efficiency, low-loss MOSFET suitable for a variety of high-current, high-frequency applications, and is widely used in power management, battery management, power tools, RF circuits, and automotive electronics.
1. **Power management and efficient power conversion**:
Due to its low RDS(ON) characteristics, the SM2030NSU-VB is very suitable for high-efficiency power conversion applications, such as in DC-DC converters and switching power supplies (SMPS). It can operate efficiently at low voltages and withstand large current loads (up to 100A), making it suitable for power supply designs that require low losses and high efficiency.
2. **Battery Management System (BMS)**:
In battery management systems, especially for battery packs with a voltage of 20V or less, the SM2030NSU-VB can be used for battery switching control and current regulation. Its low threshold voltage and high current capability make it an ideal choice for battery charge and discharge control, which can improve system efficiency and extend battery life.
3. **Power Tools and Consumer Electronics**:
In power management for power tools and other consumer electronics, the SM2030NSU-VB can be used to drive motors and control power modules. Its high current capability and low power loss characteristics are suitable for applications that require fast response and low voltage operation, providing stable power support and reducing heat generation.
4. **Power Amplifiers and Radio Frequency (RF) Circuits**:
In the field of RF and communications, the SM2030NSU-VB can be used as a switching element for power amplifiers, especially in applications that require low voltage drive and high current requirements. Its fast switching speed and low on-resistance make it an excellent performer in RF circuits, which can improve system efficiency and reduce transmission losses.
5. **Automotive Electronic Control Systems**:
This MOSFET is also suitable for automotive electronic systems, especially in scenarios with low battery voltages, such as battery management systems, DC-DC conversion modules, and battery charging control modules for electric vehicles. Its high current capability and low RDS(ON) provide better efficiency and lower heat loss, making it ideal for automotive electronic control systems.
6. **Electric Drive and Robotics**:
In industrial automation and robotics, the SM2030NSU-VB can be used as an efficient motor drive switch. Its high current carrying capacity and fast switching characteristics enable smooth control when driving high-power motors, and maintain low losses at high-frequency operations.
Overall, the SM2030NSU-VB is a high-efficiency, low-loss MOSFET suitable for a variety of high-current, high-frequency applications, and is widely used in power management, battery management, power tools, RF circuits, and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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