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SM1F12NSUB-VB Product details
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1. Product Introduction
**SM1F12NSUB-VB** is a high-performance unipolar N-Channel MOSFET in TO251 package. This type of MOSFET has high voltage resistance, and the maximum drain-source voltage (VDS) can reach 200V, which is suitable for medium and high voltage power management and power control applications. Its threshold voltage (Vth) is 3V, which can provide a low on-resistance (RDS(ON)) of 38mΩ and excellent conduction efficiency at a gate drive voltage of 10V. This MOSFET is manufactured using Trench technology, which can effectively improve switching performance and reduce conduction losses. The maximum drain current (ID) can reach 40A, which is suitable for high-power and high-current applications.
**SM1F12NSUB-VB** is a high-performance unipolar N-Channel MOSFET in TO251 package. This type of MOSFET has high voltage resistance, and the maximum drain-source voltage (VDS) can reach 200V, which is suitable for medium and high voltage power management and power control applications. Its threshold voltage (Vth) is 3V, which can provide a low on-resistance (RDS(ON)) of 38mΩ and excellent conduction efficiency at a gate drive voltage of 10V. This MOSFET is manufactured using Trench technology, which can effectively improve switching performance and reduce conduction losses. The maximum drain current (ID) can reach 40A, which is suitable for high-power and high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 40A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
| **Parameter** | **Description** |
|------------------|----------------------------------------------------|
| **Package** | TO251 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 200V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 3V |
| **RDS(ON) (On-Resistance)** | 38mΩ (at VGS=10V) |
| **ID (Drain Current)** | 40A |
| **Technology** | Trench |
- **Maximum Drain-Source Voltage (VDS)**: The maximum VDS of this MOSFET is 200V, which can support medium and high voltage power applications. It has high voltage resistance and is suitable for use in more complex power management systems.
- **Gate-source voltage (VGS)**: Its maximum gate voltage is ±20V, which can work stably under standard control signals and is suitable for most microcontrollers or digital driver outputs.
- **Threshold voltage (Vth)**: The 3V threshold voltage provides a lower switching threshold, which can ensure lower turn-on losses and improve working efficiency.
- **On-resistance (RDS(ON))**: The low on-resistance of 38mΩ ensures the lowest switching loss at a gate drive voltage of 10V, enabling it to provide higher efficiency at high currents.
- **Drain current (ID)**: The maximum drain current of 40A makes the SM1F12NSUB-VB suitable for power modules and power management applications that require high current drive.
| **Parameter** | **Description** |
|------------------|----------------------------------------------------|
| **Package** | TO251 |
| **Configuration** | Unipolar N-Channel |
| **VDS (Drain-Source Voltage)** | 200V |
| **VGS (Gate-Source Voltage)** | ±20V |
| **Vth (Threshold Voltage)** | 3V |
| **RDS(ON) (On-Resistance)** | 38mΩ (at VGS=10V) |
| **ID (Drain Current)** | 40A |
| **Technology** | Trench |
- **Maximum Drain-Source Voltage (VDS)**: The maximum VDS of this MOSFET is 200V, which can support medium and high voltage power applications. It has high voltage resistance and is suitable for use in more complex power management systems.
- **Gate-source voltage (VGS)**: Its maximum gate voltage is ±20V, which can work stably under standard control signals and is suitable for most microcontrollers or digital driver outputs.
- **Threshold voltage (Vth)**: The 3V threshold voltage provides a lower switching threshold, which can ensure lower turn-on losses and improve working efficiency.
- **On-resistance (RDS(ON))**: The low on-resistance of 38mΩ ensures the lowest switching loss at a gate drive voltage of 10V, enabling it to provide higher efficiency at high currents.
- **Drain current (ID)**: The maximum drain current of 40A makes the SM1F12NSUB-VB suitable for power modules and power management applications that require high current drive.
Domain and module applications：
3. Application fields and modules
- **Power management system**: The high current carrying capacity and low on-resistance of this MOSFET make it very suitable for power management and DC-DC converters, especially in high-power applications. It can maintain low heat loss at high voltage and high current, ensuring efficient and stable power conversion.
- **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the drive battery management system of electric vehicles, SM1F12NSUB-VB can be used as a high-efficiency switching element to manage battery charging and discharging and protect the battery from overcurrent and overvoltage.
- **Battery Charger**: In an efficient battery charger, SM1F12NSUB-VB is suitable as a switching element, supporting higher charging current and lower power loss, ensuring fast and efficient battery charging.
- **Inverter and UPS System**: This MOSFET is also widely used in power inverter and uninterruptible power supply (UPS) systems, especially in situations where high voltage and high current are required, it can provide stable switching performance and reduce energy loss.
- **Power Factor Correction (PFC)**: The SM1F12NSUB-VB can be used as an efficient switch in power factor correction circuits to reduce system losses and improve overall power conversion efficiency.
- **Home Appliances and Industrial Control**: In home appliances and industrial equipment, the SM1F12NSUB-VB can be used as a switching element for power controllers or motor drivers to improve power conversion efficiency and ensure the stability of equipment operation.
In summary, the SM1F12NSUB-VB is a MOSFET suitable for high voltage, high current and high power applications, and has broad application prospects in power conversion, inverters, electric vehicles, battery charging and other fields.
- **Power management system**: The high current carrying capacity and low on-resistance of this MOSFET make it very suitable for power management and DC-DC converters, especially in high-power applications. It can maintain low heat loss at high voltage and high current, ensuring efficient and stable power conversion.
- **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the drive battery management system of electric vehicles, SM1F12NSUB-VB can be used as a high-efficiency switching element to manage battery charging and discharging and protect the battery from overcurrent and overvoltage.
- **Battery Charger**: In an efficient battery charger, SM1F12NSUB-VB is suitable as a switching element, supporting higher charging current and lower power loss, ensuring fast and efficient battery charging.
- **Inverter and UPS System**: This MOSFET is also widely used in power inverter and uninterruptible power supply (UPS) systems, especially in situations where high voltage and high current are required, it can provide stable switching performance and reduce energy loss.
- **Power Factor Correction (PFC)**: The SM1F12NSUB-VB can be used as an efficient switch in power factor correction circuits to reduce system losses and improve overall power conversion efficiency.
- **Home Appliances and Industrial Control**: In home appliances and industrial equipment, the SM1F12NSUB-VB can be used as a switching element for power controllers or motor drivers to improve power conversion efficiency and ensure the stability of equipment operation.
In summary, the SM1F12NSUB-VB is a MOSFET suitable for high voltage, high current and high power applications, and has broad application prospects in power conversion, inverters, electric vehicles, battery charging and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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