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SM1F04NSG-VB Product details
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SM1F04NSG-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high power applications, capable of withstanding drain-source voltages up to 150V. The device features very low on-resistance (RDS(ON) = 7.5mΩ @ VGS = 10V), enabling it to excel in high current and high efficiency applications. SM1F04NSG-VB uses Trench technology to provide lower switching losses and higher efficiency, making it ideal for systems with strict requirements for low RDS(ON) and high load capacity. With a maximum drain current (ID) of 128A, it is suitable for a variety of power electronics and power management applications.
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SM1F04NSG-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high power applications, capable of withstanding drain-source voltages up to 150V. The device features very low on-resistance (RDS(ON) = 7.5mΩ @ VGS = 10V), enabling it to excel in high current and high efficiency applications. SM1F04NSG-VB uses Trench technology to provide lower switching losses and higher efficiency, making it ideal for systems with strict requirements for low RDS(ON) and high load capacity. With a maximum drain current (ID) of 128A, it is suitable for a variety of power electronics and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | 7.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 7.5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 128A
- **Technology**: Trench technology (low RDS(ON), optimized switching performance)
**Key features**:
- Up to 150V VDS for high voltage systems.
- Extremely low RDS(ON) (only 7.5mΩ) reduces power loss and improves efficiency.
- Up to 128A maximum drain current for high load applications.
- Using Trench technology, it provides efficient switching performance and reduces conduction loss.
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- **Package**: TO263
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 7.5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 128A
- **Technology**: Trench technology (low RDS(ON), optimized switching performance)
**Key features**:
- Up to 150V VDS for high voltage systems.
- Extremely low RDS(ON) (only 7.5mΩ) reduces power loss and improves efficiency.
- Up to 128A maximum drain current for high load applications.
- Using Trench technology, it provides efficient switching performance and reduces conduction loss.
---
Domain and module applications：
**
1. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
- In the battery management system (BMS) of electric vehicles, the SM1F04NSG-VB MOSFET can be used for battery charge and discharge control, fast current switching, and efficient power transmission.
- In electric drive systems, this MOSFET can be used for motor control, which needs to withstand large currents and fast switching when driving high-power motors.
2. **Power Conversion and Power Management**
- In high-efficiency DC-DC converters and AC-DC power supply systems, the low RDS(ON) characteristics of the SM1F04NSG-VB enable it to minimize power losses and is suitable for high-efficiency power conversion applications.
- Used in inverters to control the start and stop and speed regulation of motors and provide smooth power output.
3. **Solar Cell Inverter**
- In the inverter of solar cell, SM1F04NSG-VB MOSFET can handle large current and improve the inverter efficiency and reduce energy loss through its low on-resistance.
4. **Industrial Power Supply and Battery Energy Storage System**
- This MOSFET is suitable for various industrial power modules, especially those that require fast response and high-efficiency power management. Its high current capability makes it particularly suitable for large-scale battery energy storage systems.
5. **High Frequency Switching Power Supply**
- In high frequency switching power supply, SM1F04NSG-VB MOSFET can provide very low switching loss, which is very suitable for power supply applications that require frequent switching, such as wireless communication equipment, power amplifiers and computer power supplies.
Through these applications, it can be seen that SM1F04NSG-VB is a high-efficiency MOSFET suitable for high voltage and high current environments, which can meet the stringent requirements of power density and efficiency in modern power electronic systems.
1. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
- In the battery management system (BMS) of electric vehicles, the SM1F04NSG-VB MOSFET can be used for battery charge and discharge control, fast current switching, and efficient power transmission.
- In electric drive systems, this MOSFET can be used for motor control, which needs to withstand large currents and fast switching when driving high-power motors.
2. **Power Conversion and Power Management**
- In high-efficiency DC-DC converters and AC-DC power supply systems, the low RDS(ON) characteristics of the SM1F04NSG-VB enable it to minimize power losses and is suitable for high-efficiency power conversion applications.
- Used in inverters to control the start and stop and speed regulation of motors and provide smooth power output.
3. **Solar Cell Inverter**
- In the inverter of solar cell, SM1F04NSG-VB MOSFET can handle large current and improve the inverter efficiency and reduce energy loss through its low on-resistance.
4. **Industrial Power Supply and Battery Energy Storage System**
- This MOSFET is suitable for various industrial power modules, especially those that require fast response and high-efficiency power management. Its high current capability makes it particularly suitable for large-scale battery energy storage systems.
5. **High Frequency Switching Power Supply**
- In high frequency switching power supply, SM1F04NSG-VB MOSFET can provide very low switching loss, which is very suitable for power supply applications that require frequent switching, such as wireless communication equipment, power amplifiers and computer power supplies.
Through these applications, it can be seen that SM1F04NSG-VB is a high-efficiency MOSFET suitable for high voltage and high current environments, which can meet the stringent requirements of power density and efficiency in modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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