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SM1F02NSU-VB Product details
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Product Introduction
SM1F02NSU-VB is a single N-channel MOSFET in TO252 package, designed for high voltage, high current applications, with a drain-source voltage (V_DS) of 150V and a maximum drain current (I_D) of 40A. The gate-source voltage (V_GS) of this MOSFET is ±20V, the turn-on voltage (V_th) is 3V, and it has an extremely low R_DS(ON) impedance (32mΩ@V_GS = 10V), which is suitable for high-efficiency and low-power power conversion and power amplification applications. It uses Trench technology to provide high efficiency, low conduction loss and excellent switching performance, and is suitable for use in a variety of high-frequency, high-current environments.
SM1F02NSU-VB is a single N-channel MOSFET in TO252 package, designed for high voltage, high current applications, with a drain-source voltage (V_DS) of 150V and a maximum drain current (I_D) of 40A. The gate-source voltage (V_GS) of this MOSFET is ±20V, the turn-on voltage (V_th) is 3V, and it has an extremely low R_DS(ON) impedance (32mΩ@V_GS = 10V), which is suitable for high-efficiency and low-power power conversion and power amplification applications. It uses Trench technology to provide high efficiency, low conduction loss and excellent switching performance, and is suitable for use in a variety of high-frequency, high-current environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 3V | 40A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: SM1F02NSU-VB
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 150V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 32mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 40A
- **Technology type**: Trench
- **Maximum power loss (P_d)**: 1.1W
- **Operating temperature range**: -55°C to +150°C
- **Features**:
- Low on-resistance, reduced energy loss
- High voltage and high current capability
- Excellent switching performance, suitable for fast switching applications
- Trench process improves MOSFET switching efficiency and thermal stability
- **Applications**:
- Switching power supplies
- Power tools
- Low voltage power supplies and battery management systems
- **Model**: SM1F02NSU-VB
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 150V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 32mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 40A
- **Technology type**: Trench
- **Maximum power loss (P_d)**: 1.1W
- **Operating temperature range**: -55°C to +150°C
- **Features**:
- Low on-resistance, reduced energy loss
- High voltage and high current capability
- Excellent switching performance, suitable for fast switching applications
- Trench process improves MOSFET switching efficiency and thermal stability
- **Applications**:
- Switching power supplies
- Power tools
- Low voltage power supplies and battery management systems
Domain and module applications：
Applications and modules
1. **Switching Power Supply (SMPS)**: SM1F02NSU-VB is suitable for use as a switching element in switching power supplies, providing high efficiency and low conduction loss, and maintaining excellent thermal stability and switching performance in high-frequency operation. It is particularly suitable for use in DC-DC converters and AC-DC power conversion modules to provide stable voltage and current output.
2. **Battery Management System (BMS)**: In the battery management system, SM1F02NSU-VB can be used in battery charging and discharging control circuits to provide efficient power conversion and battery protection. Due to its low R_DS(ON) and high current carrying capacity, it is suitable for battery management under high load conditions, ensuring that the battery charging and discharging process is stable and safe.
3. **Power Tools**: This MOSFET can be used in the power management part of power tools, such as electric drills, saws, fans, etc. It can carry high currents to ensure that power tools can still operate normally under high load conditions, while reducing system energy loss through low on-resistance and improving tool efficiency.
4. **Power amplifier**: SM1F02NSU-VB can also be used in power amplifiers as a switching element to provide fast switching and ensure efficient amplification of signals. Its low on-resistance and high current capability make it particularly suitable for applications requiring high power output, such as power amplifier modules in wireless communication equipment.
5. **Automotive electronics**: This MOSFET can be used in automotive power systems, such as on-board chargers and power battery systems. Its high voltage and high current capabilities make it suitable for working in the complex electrical environment of the car, ensuring stable operation of the power conversion module in the automotive electronic system.
Through Trench technology, SM1F02NSU-VB can provide excellent power conversion efficiency and long service life in these fields.
1. **Switching Power Supply (SMPS)**: SM1F02NSU-VB is suitable for use as a switching element in switching power supplies, providing high efficiency and low conduction loss, and maintaining excellent thermal stability and switching performance in high-frequency operation. It is particularly suitable for use in DC-DC converters and AC-DC power conversion modules to provide stable voltage and current output.
2. **Battery Management System (BMS)**: In the battery management system, SM1F02NSU-VB can be used in battery charging and discharging control circuits to provide efficient power conversion and battery protection. Due to its low R_DS(ON) and high current carrying capacity, it is suitable for battery management under high load conditions, ensuring that the battery charging and discharging process is stable and safe.
3. **Power Tools**: This MOSFET can be used in the power management part of power tools, such as electric drills, saws, fans, etc. It can carry high currents to ensure that power tools can still operate normally under high load conditions, while reducing system energy loss through low on-resistance and improving tool efficiency.
4. **Power amplifier**: SM1F02NSU-VB can also be used in power amplifiers as a switching element to provide fast switching and ensure efficient amplification of signals. Its low on-resistance and high current capability make it particularly suitable for applications requiring high power output, such as power amplifier modules in wireless communication equipment.
5. **Automotive electronics**: This MOSFET can be used in automotive power systems, such as on-board chargers and power battery systems. Its high voltage and high current capabilities make it suitable for working in the complex electrical environment of the car, ensuring stable operation of the power conversion module in the automotive electronic system.
Through Trench technology, SM1F02NSU-VB can provide excellent power conversion efficiency and long service life in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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