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SM1A54NHU-VB Product details

Product introduction:

SM1A54NHU-VB MOSFET Product Introduction

SM1A54NHU-VB is a single-tube N-type MOSFET in TO252 package. It has high performance and is particularly suitable for use in high-efficiency power conversion applications that require low RDS(ON) values. Its maximum drain-source voltage (VDS) is 100V, the gate-source voltage (VGS) is ±20V, it has a threshold voltage (Vth) of 1.8V, and when VGS=10V, the RDS(ON) is only 18mΩ, which makes it perform well in high-efficiency and high-power density applications. The SM1A54NHU-VB has a rated current of 45A and is suitable for various low-voltage switch mode power supplies (SMPS), DC-DC converters, electric vehicle chargers and other fields. It uses Trench technology and has low conduction losses and good thermal performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 45A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
SM1A54NHU-VB MOSFET Detailed parameter description

- **Package**: TO252
- **Configuration**: Single-N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ@VGS=10V
- **Maximum leakage current (ID)**: 45A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C (depending on the application environment)

Domain and module applications:

SM1A54NHU-VB MOSFET Applications and Module Examples

1. **DC-DC Power Converters**
The SM1A54NHU-VB is widely used in DC-DC power converters, especially where high-efficiency conversion and low conduction losses are required. Due to its low RDS(ON) value of 18mΩ, it provides excellent performance in chargers, distributed power supplies, and high-frequency switch mode power supplies (SMPS), which can significantly reduce power losses and improve system efficiency.

2. **Electric Vehicle Chargers**
In electric vehicle chargers, the SM1A54NHU-VB can be used in battery charging circuits, especially in high-power charging modules. Due to its maximum current handling capability of 45A, it can handle high power flows, and due to its low RDS(ON) value, it can achieve efficient power conversion, help optimize charging speed and improve system stability.

3. **Power Amplifiers and Inverters**
This MOSFET is also very suitable for inverters and power amplifiers. Whether in solar inverters or power conversion modules, the SM1A54NHU-VB can provide high-efficiency switching performance, reduce heat loss and power loss, and is suitable for medium and high power applications, especially where high switching frequencies are required.

4. **Battery Management System (BMS)**
In the battery management system, the SM1A54NHU-VB can be used as a switching device to manage the current flow during battery charging and discharging. Its current capability of up to 45A and low on-resistance ensure efficient operation and long service life of the BMS system.

5. **Automotive Electronic Systems**
The SM1A54NHU-VB is suitable for use in power management units (PMUs), electric power steering systems (EPS), on-board battery management and other high-power density modules in automotive electronic systems, providing efficient power conversion and thermal management capabilities to ensure system stability and efficiency.

Through the above application cases, SM1A54NHU-VB can provide excellent switching performance, low power loss and high current handling capability in multiple fields, making it an ideal choice in modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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