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SM1A35PSU-VB Product details
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Product Introduction
SM1A35PSU-VB is a high-efficiency P-Channel MOSFET in TO252 package, designed for load switching and power management applications. With a maximum drain-source voltage (VDS) of -100V and a maximum drain current (ID) of -16A, this MOSFET can effectively handle negative voltages and achieve excellent control effects in load switches. With a gate-source voltage (VGS) range of ±20V and a threshold voltage (Vth) of -2V, it is suitable for a variety of low-power to medium-power switching applications. Using Trench technology, this MOSFET provides a lower on-resistance (RDS(ON)) to reduce power losses and improve the overall efficiency of the system.
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SM1A35PSU-VB is a high-efficiency P-Channel MOSFET in TO252 package, designed for load switching and power management applications. With a maximum drain-source voltage (VDS) of -100V and a maximum drain current (ID) of -16A, this MOSFET can effectively handle negative voltages and achieve excellent control effects in load switches. With a gate-source voltage (VGS) range of ±20V and a threshold voltage (Vth) of -2V, it is suitable for a variety of low-power to medium-power switching applications. Using Trench technology, this MOSFET provides a lower on-resistance (RDS(ON)) to reduce power losses and improve the overall efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: SM1A35PSU-VB
- **Package type**: TO252
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V
- Suitable for high-power switching applications that handle negative voltages, capable of withstanding a drain-source voltage of -100V, ensuring safe operation in high-voltage systems.
- **Gate-source voltage (VGS)**: ±20V
- Supports a gate-source voltage of ±20V, compatible with a variety of control circuits and drive modules, and has strong circuit compatibility.
- **Threshold voltage (Vth)**: -2V
- The threshold voltage is -2V, meaning that when the gate voltage reaches this value, the MOSFET starts to turn on. This low threshold enables fast response in low-voltage control applications.
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- When VGS=10V, RDS(ON) is 100mΩ. The lower on-resistance helps reduce power loss and improve switching efficiency, which is suitable for high-efficiency power supply applications.
- **Drainage current (ID)**: -16A
- The maximum leakage current is -16A, which is suitable for higher current load switch applications and can effectively handle the requirements of large current loads.
- **Technology**: Trench
- Using Trench technology, the on-resistance and switching performance are optimized, which is particularly suitable for high-frequency switching and high-efficiency applications, which can significantly reduce power loss and improve the overall efficiency of the system.
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- **Model**: SM1A35PSU-VB
- **Package type**: TO252
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -100V
- Suitable for high-power switching applications that handle negative voltages, capable of withstanding a drain-source voltage of -100V, ensuring safe operation in high-voltage systems.
- **Gate-source voltage (VGS)**: ±20V
- Supports a gate-source voltage of ±20V, compatible with a variety of control circuits and drive modules, and has strong circuit compatibility.
- **Threshold voltage (Vth)**: -2V
- The threshold voltage is -2V, meaning that when the gate voltage reaches this value, the MOSFET starts to turn on. This low threshold enables fast response in low-voltage control applications.
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- When VGS=10V, RDS(ON) is 100mΩ. The lower on-resistance helps reduce power loss and improve switching efficiency, which is suitable for high-efficiency power supply applications.
- **Drainage current (ID)**: -16A
- The maximum leakage current is -16A, which is suitable for higher current load switch applications and can effectively handle the requirements of large current loads.
- **Technology**: Trench
- Using Trench technology, the on-resistance and switching performance are optimized, which is particularly suitable for high-frequency switching and high-efficiency applications, which can significantly reduce power loss and improve the overall efficiency of the system.
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Domain and module applications：
Applications and module examples
1. **Load switch**
SM1A35PSU-VB is ideal for load switch applications. In battery-powered devices, power tools or smart homes, this MOSFET can effectively switch current and control the on/off state of the load. Due to its low on-resistance and high current handling capability, it can effectively reduce switching losses and improve system efficiency.
2. **DC-DC converter**
In the DC-DC converter, SM1A35PSU-VB can be used as an efficient switching element for voltage conversion and current regulation. P-Channel MOSFET is particularly suitable for applications with negative voltage or load feedback, providing excellent reverse current control and voltage regulation capabilities, and is widely used in power management systems.
3. **Battery Management System (BMS)**
In the battery management system, SM1A35PSU-VB can be used as a load switch or battery protection switch for the battery. It helps to precisely control the working state of the battery during the charging and discharging process, provides over-current protection and temperature monitoring functions for the battery, and ensures the safety and long life of the battery system.
4. **LED drive circuit**
In the LED drive circuit, the SM1A35PSU-VB can be used as a power switch to regulate the current output to ensure stable and efficient LED brightness. The high current carrying capacity and low on-resistance of the MOSFET make it ideal for high-efficiency lighting applications, reducing energy loss and extending the life of the LED.
5. **Electric Vehicles and Energy Storage Systems**
The SM1A35PSU-VB is also suitable for switch control in electric vehicles and energy storage systems. In battery management, energy recovery systems, and power transmission, this MOSFET can be used as part of the power switch management system. Its high current handling capability enables it to withstand the large currents during battery discharge and charging, ensuring the efficient operation of the electric vehicle battery system.
6. **Consumer Electronics**
SM1A35PSU-VB is suitable for a variety of consumer electronics products, especially systems that require negative voltage control, such as laptops, wireless headphones, and smart watches. These devices often require low power consumption and efficient power management, and MOSFET can play an important role in controlling current and reducing power consumption.
7. **Smart Home Devices**
In smart home systems, this MOSFET can be used for power management to control the switching operation of lights, power sockets, and various home appliances. Its efficient conduction performance and low power loss make it an ideal choice for intelligent power control systems.
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1. **Load switch**
SM1A35PSU-VB is ideal for load switch applications. In battery-powered devices, power tools or smart homes, this MOSFET can effectively switch current and control the on/off state of the load. Due to its low on-resistance and high current handling capability, it can effectively reduce switching losses and improve system efficiency.
2. **DC-DC converter**
In the DC-DC converter, SM1A35PSU-VB can be used as an efficient switching element for voltage conversion and current regulation. P-Channel MOSFET is particularly suitable for applications with negative voltage or load feedback, providing excellent reverse current control and voltage regulation capabilities, and is widely used in power management systems.
3. **Battery Management System (BMS)**
In the battery management system, SM1A35PSU-VB can be used as a load switch or battery protection switch for the battery. It helps to precisely control the working state of the battery during the charging and discharging process, provides over-current protection and temperature monitoring functions for the battery, and ensures the safety and long life of the battery system.
4. **LED drive circuit**
In the LED drive circuit, the SM1A35PSU-VB can be used as a power switch to regulate the current output to ensure stable and efficient LED brightness. The high current carrying capacity and low on-resistance of the MOSFET make it ideal for high-efficiency lighting applications, reducing energy loss and extending the life of the LED.
5. **Electric Vehicles and Energy Storage Systems**
The SM1A35PSU-VB is also suitable for switch control in electric vehicles and energy storage systems. In battery management, energy recovery systems, and power transmission, this MOSFET can be used as part of the power switch management system. Its high current handling capability enables it to withstand the large currents during battery discharge and charging, ensuring the efficient operation of the electric vehicle battery system.
6. **Consumer Electronics**
SM1A35PSU-VB is suitable for a variety of consumer electronics products, especially systems that require negative voltage control, such as laptops, wireless headphones, and smart watches. These devices often require low power consumption and efficient power management, and MOSFET can play an important role in controlling current and reducing power consumption.
7. **Smart Home Devices**
In smart home systems, this MOSFET can be used for power management to control the switching operation of lights, power sockets, and various home appliances. Its efficient conduction performance and low power loss make it an ideal choice for intelligent power control systems.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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