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SM1A27PSU-VB Product details

Product introduction:

SM1A27PSU-VB MOSFET Detailed Product Introduction

**Product Name**: SM1A27PSU-VB
**Package Type**: TO252
**Configuration**: Single-P-Channel
**Technology Type**: Trench Technology
**Maximum Drain-Source Voltage (VDS)**: -100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -2V
**On-Resistance (RDS(ON))**: 100mΩ @ VGS = 10V; 120mΩ @ VGS = 4.5V
**Maximum Drain Current (ID)**: -16A

**Product Overview**:
SM1A27PSU-VB is a TO252 The packaged single P-channel MOSFET is designed for medium and low voltage applications. It uses advanced Trench technology, has low on-resistance, and can provide high efficiency performance at low voltage. The maximum drain-source voltage of this MOSFET is -100V and the maximum drain current is -16A. It is suitable for power management, battery protection, load switching and other fields. Its on-resistance is 100mΩ at a gate voltage of 10V, ensuring high efficiency. It is suitable for occasions requiring higher power control, especially load switching and inverter applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -100V -2V -16A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -100V -2V -16A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -100V -2V -16A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
SM1A27PSU-VB MOSFET Detailed parameter description

- **VDS (maximum drain-source voltage)**: -100V
The maximum drain-source voltage of SM1A27PSU-VB is -100V, which is suitable for systems that handle negative voltages. It can work stably within the negative voltage range, so it is suitable for applications such as load switches and inverters.

- **VGS (maximum gate-source voltage)**: ±20V
The maximum gate-source voltage of this MOSFET is ±20V, which supports conventional gate drive voltages, can simplify the drive circuit design, and ensure the accuracy of MOSFET switch control.

- **Vth (threshold voltage)**: -2V
The threshold voltage is -2V, which means that when the gate voltage is lower than this value, the MOSFET starts to turn on. With a lower threshold voltage, the MOSFET can still work normally under low voltage drive, which is suitable for low-power startup applications.

- **RDS(ON) (on-resistance)**: 100mΩ @ VGS = 10V; 120mΩ @ VGS = 4.5V
The on-resistance of the SM1A27PSU-VB is 100mΩ at VGS = 10V. The lower on-resistance helps reduce power loss and improve system efficiency. Especially in applications such as battery drive and power management, energy waste can be significantly reduced.

- **ID (maximum drain current)**: -16A
The maximum drain current of this MOSFET is -16A, which is suitable for handling medium current loads and is suitable for switching applications that require higher current carrying, such as power protection and load switching.

Domain and module applications:

SM1A27PSU-VB MOSFET Application Examples

1. **Load Switch**
The P-channel characteristics of the SM1A27PSU-VB make it ideal for load switch applications, especially in circuits that need to control negative voltages. It can operate in an efficient switching mode and is widely used in industrial power management systems, portable power devices, and automotive electronics.

2. **Battery Protection Circuit**
Due to its low on-resistance and large drain current carrying capacity, this MOSFET can be used in battery protection circuits, especially in lithium battery protection boards and battery management systems for power tools. It helps provide effective switching control when charging and discharging the battery, avoiding dangers such as overcharging, over-discharging, and short circuits.

3. **DC-DC Converter**
The SM1A27PSU-VB can be used as a switching element in a DC-DC converter, especially in positive and negative power conversion. Its P-channel characteristics enable it to provide more efficient current control in complex power conversion systems. Widely used in uninterruptible power supplies (UPS) and power management modules.

4. **Motor drive system**
This MOSFET can be used as a switching element in the motor drive system to control the start and stop or speed regulation of the motor, especially in the fields of power tools, electric bicycles, etc. Due to its good current carrying capacity and low on-resistance, it can improve the efficiency of the motor drive system.

5. **Inverter application**
SM1A27PSU-VB is suitable for inverter circuits, especially in solar inverters and AC drive systems. Its P-channel characteristics make it very suitable for controlling the negative voltage part in the inverter, and can provide efficient power conversion in a wider range of application environments.

6. **Automotive electronics**
In automotive electronics applications, SM1A27PSU-VB is very suitable as a load switch or battery protection switch, which can effectively manage the charging and discharging process of the battery system, ensure that the battery is not over-discharged or overcharged, and protect the on-board electronic system from problems such as current fluctuations and short circuits.

7. **Power Management for Consumer Electronics**
The low on-resistance and high current carrying capacity of this MOSFET make it play an important role in consumer electronics, especially battery-powered mobile devices, power tools and smart home products. It can provide efficient power switching for these devices and effectively control the battery charging and discharging process.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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