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SM1A25NSU-VB Product details
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1. Product Introduction (SM1A25NSU-VB)
SM1A25NSU-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, suitable for various power management, power control and power switching applications. The maximum drain current (ID) of this MOSFET is 15A, which can handle large current loads and is suitable for applications requiring high current density and high power.
The on-resistance of SM1A25NSU-VB is 114mΩ @ VGS=10V, which provides good switching efficiency in many power switching applications. By adopting Trench technology, MOSFET excels in reducing switching losses and improving efficiency, and is suitable for use in scenarios requiring fast switching and low power loss. Its threshold voltage is 1.8V, which means that it can work normally at a lower gate voltage and has better control performance.
SM1A25NSU-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, suitable for various power management, power control and power switching applications. The maximum drain current (ID) of this MOSFET is 15A, which can handle large current loads and is suitable for applications requiring high current density and high power.
The on-resistance of SM1A25NSU-VB is 114mΩ @ VGS=10V, which provides good switching efficiency in many power switching applications. By adopting Trench technology, MOSFET excels in reducing switching losses and improving efficiency, and is suitable for use in scenarios requiring fast switching and low power loss. Its threshold voltage is 1.8V, which means that it can work normally at a lower gate voltage and has better control performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Model**: SM1A25NSU-VB
- **Package**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Pulsed drain current (IDM)**: 60A (maximum pulse current)
- **Power dissipation (Ptot)**: 40W (typical value, depending on heat dissipation conditions)
- **Switching time**:
- Turn-on time (tD(ON)): 35ns (typical)
- Turn-off time (tD(OFF)): 55ns (typical)
- **Gate charge (Qg)**: 20nC @ VGS = 10V
- **Operating temperature range**: -55°C to +150°C
- **Maximum operating temperature**: +150°C
- **Thermal resistance (RθJC)**: 3°C/W
- **Technology**: Trench technology (low on-resistance, high efficiency switch)
- **Model**: SM1A25NSU-VB
- **Package**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Pulsed drain current (IDM)**: 60A (maximum pulse current)
- **Power dissipation (Ptot)**: 40W (typical value, depending on heat dissipation conditions)
- **Switching time**:
- Turn-on time (tD(ON)): 35ns (typical)
- Turn-off time (tD(OFF)): 55ns (typical)
- **Gate charge (Qg)**: 20nC @ VGS = 10V
- **Operating temperature range**: -55°C to +150°C
- **Maximum operating temperature**: +150°C
- **Thermal resistance (RθJC)**: 3°C/W
- **Technology**: Trench technology (low on-resistance, high efficiency switch)
Domain and module applications：
### 3. Applications and Modules
#### Power Management System
SM1A25NSU-VB is widely used in high-efficiency power management systems, especially in DC-DC converters, battery management systems (BMS), power adapters and uninterruptible power supplies (UPS). Its low on-resistance and high current handling capability make it suitable for systems with high power conversion efficiency requirements. In these applications, SM1A25NSU-VB can effectively reduce switching losses and improve system efficiency, thereby improving the working stability and reliability of the power supply.
#### Power Tools and Motor Drives
In power tools and motor drive systems, SM1A25NSU-VB provides high current carrying capacity and low on-resistance, suitable for high-efficiency motor drives, variable frequency drives and automation control systems. Its excellent switching characteristics make it an ideal choice for power tools, electric bicycles and electric vehicle drive systems. In these applications, it can maintain low power loss under high current loads and improve the efficiency of power tools and motors.
#### Automotive Electronics and Battery Management
SM1A25NSU-VB In the field of automotive electronics, especially in battery management systems (BMS), it can provide precise current control for electric vehicles (EVs). In the power system of electric vehicles, this MOSFET is used for battery charge and discharge management, power conversion and motor drive. With its high power density and high efficiency, it can significantly improve the performance of battery management systems, extend battery life and improve overall system efficiency.
#### High-efficiency switching power supply (SMPS)
SM1A25NSU-VB is also widely used in high-efficiency switching power supplies (SMPS), especially in LED driver power supplies, power adapters and power conversion modules. Its low on-resistance and fast switching response make it an ideal choice for improving power efficiency. Whether in industrial, consumer electronics or communication equipment, SM1A25NSU-VB can provide excellent power conversion performance to ensure the stability of the equipment under high load and long-term operation.
#### Power Conversion and Inverters
In power conversion systems, especially inverter applications, the SM1A25NSU-VB can provide high-speed switching characteristics to ensure efficient power conversion. It can be used in scenarios such as solar inverters, electric fan control, and power conversion modules, especially in applications with high requirements for switching frequency and power conversion efficiency.
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**Summary**
The SM1A25NSU-VB is a high-efficiency single N-channel MOSFET in a TO252 package with a 100V withstand voltage and a maximum drain current of 15A. It is suitable for high-power power management, power tools, battery management, power conversion, and inverters. Its low on-resistance and efficient switching performance make it widely used in multiple high-efficiency power systems, especially in systems with high requirements for current handling capabilities and switching efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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